Voltage detecting circuit and method for measuring characteristic of transistor

Patent metadata

Field	Value
Publication number	US-9891265-B2
Application number	US-201314035016-A
Country	US
Kind code	B2
Filing date	Sep 24, 2013
Priority date	Nov 22, 2012
Publication date	Feb 13, 2018
Grant date	Feb 13, 2018

Abstract

A voltage detection circuit includes: a transistor; a switch coupled to a drain terminal of the transistor; the drain terminal is coupled to an one end of the switch; a first driver that controls the switch in synchronization with a second driver that drives a gate terminal of the transistor; and a plurality of resistors coupled in series and coupled to an another end of the switch.

First claim

What is claimed is:

1. A voltage detection circuit, comprising:
a transistor;
a switch coupled to the transistor, wherein a first terminal of the switch is coupled to a drain terminal of the transistor;
a first driver that controls the switch in synchronization with a second driver that drives a gate terminal of the transistor; and
a first resistor and a second resistor, a first end of the first resistor is coupled in series to a first end of the second resistor,
wherein a second end of the second resistor is coupled to a second terminal of the switch that is opposite to the first terminal,
wherein a second end of the first resistor is grounded,
wherein the second end of the second resistor is electrically coupled to the drain terminal of the transistor when the switch is on, and
wherein the second end of the second resistor is electrically insulated from the drain terminal of the transistor when the switch is off.

2. The voltage detection circuit according to claim 1 ,
wherein the transistor is a field-effect transistor, a MOS transistor, a bipolar transistor, a GaN-HEMT, or a composite type of the field-effect transistor, the MOS transistor, the bipolar transistor, and the GaN-HEMT transistors.

3. The voltage detection circuit according to claim 2 ,
wherein the switch is a field-effect or bipolar transistor and has a breakdown voltage equal to or higher than a break down voltage of the transistor.

4. A method for measuring a characteristic of a transistor, comprising:
arranging a switch, a first driver, a second driver, a first resistor and a second resistor in the periphery of the transistor,
the switch is coupled to the transistor,
a first terminal of the switch is coupled to a drain terminal of the transistor,
the first driver controls the switch in synchronization with the second driver that drives a gate terminal of the transistor,
a first end of the first resistor is coupled in series to a first end of the second resistor,
a second end of the second resistor is coupled to a second terminal of the switch that is opposite to the first terminal, and
a second end of the first resistor is grounded;
simultaneously turning on and off the first driver and the second driver;
calculating a drain voltage of the transistor by measuring a voltage of a connection point of the first resistor and the second resistor;
measuring an on-current of the transistor simultaneously with the voltage of the connection point of the first resistor and the second resistor; and
calculating an on-resistance of the transistor based on the on-current and the voltage of the connection point of the first resistor and the second resistor,
wherein the second end of the second resistor is electrically coupled to the drain terminal of the transistor when the switch is on, and
wherein the second end of the second resistor is electrically insulated from the drain terminal of the transistor when the switch is off.

5. The method according to claim 4 ,
wherein the connection point of the first resistor and the second resistor is directly coupled to an input of an oscilloscope.

Assignees

• Fujitsu Ltd

Inventors

• Hirose Tatsuya

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• G01R1/06766

  Input circuits therefor · CPC title

• G01R31/2621 Primary

  for testing field effect transistors, i.e. FET's · CPC title

• H01L21/00

  Electricity · mapped topic