Specimen preparation method
US-2015137003-A1 · May 21, 2015 · US
Atom probe tomography sample preparation for three-dimensional (3D) semiconductor devices
US9201112B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9201112-B2 |
| Application number | US-201314100343-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 9, 2013 |
| Priority date | Dec 9, 2013 |
| Publication date | Dec 1, 2015 |
| Grant date | Dec 1, 2015 |
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Abstract
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A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure is provided. The method may include measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device and identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device. The identified Fin structure is detached from the 3D field effect transistor device using a nanomanipulator probe tip. The detached Fin is then welded to the nanomanipulator probe tip using an incident focused ion beam having a voltage of less than about 1000 eV. The incident focused ion beam having a voltage of less than about 1000 eV is applied to a tip of the Fin that is welded to the nanomanipulator probe tip. The tip of the Fin may then be sharpened by the focused ion beam.
First claim
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What is claimed is: 1. A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure, the method comprising: measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device; identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure corresponding to the 3D field effect transistor device; detaching the identified Fin…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Physics · mapped topic
Electricity · mapped topic
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- What does patent US9201112B2 cover?
- A method for atom probe tomography (APT) sample preparation from a three-dimensional (3D) field effect transistor device formed within a semiconductor structure is provided. The method may include measuring a capacitance-voltage (C-V) characteristic for the 3D field effect transistor device and identifying, based on the measured capacitance-voltage (C-V) characteristic, a Fin structure correspo…
- Who is the assignee on this patent?
- IBM
- What technology area does this patent fall under?
- Primary CPC classification G01R31/2644. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Dec 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).