Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same
US-8981395-B2 · Mar 17, 2015 · US
Wafer-level light emitting diode and wafer-level light emitting diode package
US9882102B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9882102-B2 |
| Application number | US-201615247516-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 25, 2016 |
| Priority date | Sep 24, 2010 |
| Publication date | Jan 30, 2018 |
| Grant date | Jan 30, 2018 |
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- Title
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Abstract
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A light-emitting diode including a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer, a first bump arranged on a first side of the semiconductor stack and being electrically connected to the first semiconductor layer via the contact region, a second bump arranged on the first side of the semiconductor stack and being electrically connected to the second semiconductor layer, a first insulation layer disposed covering a side surface of the first bump, and a wavelength converter disposed on a second side of the semiconductor stack. The wavelength converter laterally extends beyond the semiconductor stack. The first insulation layer includes a side surface that is flush with a side surface of the wavelength converter.
First claim
Opening claim text (preview).
What is claimed is: 1. A light-emitting diode (LED) package, comprising: a first semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer; a first pad arranged on a first side of the first semiconductor stack and being electrically connected to the first semiconductor layer via the contact region of the first semiconductor layer; a second pad arranged on the first side of the first semiconductor stack and being electrically connected to the second semiconductor layer; a conductive element arranged on the first side of the semiconductor stack and disposed between the first pad and the second pad; and a first insulation layer covering the conductive element. 2. The LED of claim 1 , further comprising: a first bump arranged on a first side of the first semiconductor stack, the first bump being electrically connected to the first semiconductor layer via the contact region of the first semiconductor layer; and a second bump arranged on the first side of the first semiconductor stack, the second bump being electrically connected to the second semiconductor layer. 3. The LED package of claim 1 , further comprising a second insulation layer disposed between the first semiconductor stack and the conductive element, wherein the conductive element is disposed directly on a second insulation layer. 4. The LED package of claim 3 , further comprising a third insulation layer disposed between the second insulation layer and the first semiconductor stack. 5. The LED package of claim 4 , wherein the conductive element comprises a connector that electrically connects the first semiconductor stack of a first light emitting cell to a second semiconductor stack of a second cell. 6. The LED package of claim 1 , wherein the conductive element is disposed in a center region of the LED package in a plan view. 7. The LED package of claim 1 , wherein first and second pads have heights that are higher than a height of the conductive element. 8. The LED package of claim 2 , wherein the conductive element comprises a dummy bump disposed between the first and second bumps. 9. A light-emitting diode (LED), comprising: a semiconductor stack comprising a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer; a first pad arranged on the first side of the semiconductor stack and being electrically connected to the first semiconductor layer via the contact region of the first semiconductor layer; a second pad arranged on the first side of the semiconductor stack and being electrically connected to the second semiconductor layer; a conductive element arranged on the first side of the semiconductor stack and disposed between the first pad and the second pad; and a first insulation layer covering the covering the conductive element wherein the first insulation layer is arranged between the first pad and the conductive element.
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9882102B2 cover?
- A light-emitting diode including a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, wherein the second semiconductor layer and the active layer provide a contact region exposing the first semiconductor layer, a first bump arranged on a first side of the semiconductor stack and…
- Who is the assignee on this patent?
- Seoul Semiconductor Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01L33/56. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jan 30 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).