Composition for forming a coating type silicon-containing film, substrate, and patterning process

Patent metadata

Field	Value
Publication number	US-9880470-B2
Application number	US-201514855772-A
Country	US
Kind code	B2
Filing date	Sep 16, 2015
Priority date	Oct 3, 2014
Publication date	Jan 30, 2018
Grant date	Jan 30, 2018

Abstract

A composition for forming a coating type silicon-containing film, containing one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a coupling between units shown in the formula (2). There can be provided a composition capable of forming a silicon-containing film that has excellent adhesiveness in fine patterning, and can be easily wet etched by a removing liquid which does not cause damage to a semiconductor substrate and a coating type organic film or a CVD film mainly of carbon which is required in the patterning process.

First claim

What is claimed is:

1. A composition for forming a coating type silicon-containing film, comprising
one or more silicic acid skeletal structures represented by the formula (1) and one or more silicon skeletal structures represented by the formula (2), wherein the composition contains a polysilane structure obtained by a coupling between units in the formula (2),
a solvent, and
(A) one or more polymers selected from a hydrolysate, a condensate, and a hydrolysis condensate of a mixture containing one or more silicon compounds represented by the formulae (A-1-1) to (A-1-4) and one or more polysilane compounds represented by the formula (A-2-1), the compound represented by the formula (A-2-1) having a weight average molecular weight of 1,000 or less,

wherein R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 each represent a hydrogen atom or an organic group having 1 to 30 carbon atoms, wherein a hydrogen atom(s) in the organic group may be substituted by a halogen atom(s); R 7 , R 8 , R 9 , R 10 , R 11 , and R 12 each represent a methyl group, a phenyl group, or a hydroxyl group; m10, m11, m12, and m13 each represent a molar fraction in the silicic acid skeletal structure, and satisfy m10+m11+m12+m13=1, 0≦m10≦0.3, 0≦m11≦0.5, 0≦m12≦0.7, and 0<m13≦1; and m20, m21, m22, and m23 each represent a molar fraction in the silicon skeletal structure, and satisfy m20+m21+m22+m23=1, 0≦m20≦1, 0≦m21≦1, 0≦m22≦1and 0≦m23≦1,
R 1 R 2 R 3 SiOR  (A-1-1)

R 4 R 5 Si(OR) 2   (A-1-2)

R 6 Si(OR) 3   (A-1-3)

Si(OR) 4   (A-1-4)

wherein R represents a hydrocarbon group having 1 to 6 carbon atoms; and R 1 , R 2 , R 3 , R 4 , R 5 , and R 6 have the same meanings as defined above,
(R 7 R 8 R 9 Si) a1 (R 10 R 11 Si) a2 (R 12 Si) a3 (Si) a4   (A-2-1)

wherein R 7 , R 8 , R 9 , R 10 , R 11 , and R 12 have the same meanings as defined above; and a1, a2, a3, and a4 each represent a molar fraction, and satisfy a1+a2+a3+a4=1, 0≦a1≦1, 0≦a2≦1, 0≦a3≦1, and 0≦a4<1.

2. The composition for forming a coating type silicon-containing film according to claim 1 , wherein the composition further comprises (C) one or more members selected from one or more silicon compounds represented by the formula (C-1), a hydrolysate, a condensate, and a hydrolysis condensate thereof,
R 1C c1 R 2C c2 R 3C c3 Si(OR 0C ) (4-c1-c2-c3)   (C-1)

wherein R 0C represents a hydrocarbon group having 1 to 6 carbon atoms; R 1C , R 2C , and R 3C each represent a hydrogen atom or a monovalent organic group having 1 to 30 carbon atoms; and c1, c2, and c3 are each 0 or 1, and satisfy 1≦c1+c2+c3≦3.

3. The composition for forming a coating type silicon-containing film according to claim 2 , wherein one or more of R 1C , R 2C , and R 3C in the formula (C-1) are an organic group having a hydroxyl group or a carboxyl group each substituted by an acid-labile group.

4. The composition for forming a coating type silicon-containing film according to claim 2 , wherein the component (C) contains one or more members selected from one or more silicon compounds represented by the formulae (A-1-1) to (A-1-4) and one or more phosphorus compounds represented by the formulae (C-2-1) to (C-2-6) each alone, a mixture thereof, and a hydrolysate, a condensate, or a hydrolysis condensate thereof,
PX 3   (C-2-1)

POX 3   (C-2-2)

P 2 O 5   (C-2-3)

H(HPO 3 ) a5 OH  (C-2-4)

R 13 PX 2   (C-2-5)

R 13 POX 2   (C-2-6)

wherein R 13 represent a hydrogen atom or an organic group having 1 to 30 carbon atoms, wherein a hydrogen atom(s) in the organic group may be substituted by a halogen atom(s); X represents a halogen atom, a hydroxyl group, or an alkoxy group having 1 to 6 carbon atoms; and a5 is an integer of 1 or more.

5. The composition for forming a coating type silicon-containing film according to claim 2 , wherein the component (C) contains one or more members selected from one or more silicon compounds represented by the formulae (A-1-1) to (A-1-4) and one or more boron compounds represented by the formulae (C-3-1) to (C-3-3) each alone, a mixture thereof, and a hydrolysate, a condensate, or a hydrolysis condensate thereof,
BX 3   (C-3-1)

B 2 O 3   (C-3-2)

R 14 BX 2   (C-3-3)

wherein R 14 represent a hydrogen atom or an organic group having 1 to 30 carbon atoms, wherein a hydrogen atom(s) in the organic group may be substituted by a halogen atom(s); and X represents a halogen atom, a hydroxyl group, or an alkoxy group having 1 to 6 carbon atoms.

6. The composition for forming a coating type silicon-containing film according to claim 1 , wherein the composition further comprises an organic compound having 2 or more hydroxyl groups or carboxyl groups in one molecule.

7. A substrate for use in a semiconductor manufacturing process, comprising a silicon-containing film formed on a body to be processed by applying the composition for forming a coating type silicon-containing film according to claim 1 .

8. The substrate according to claim 7 , wherein the silicon-containing film functions as at least one of a resist under layer film, a flattening film, and an insulating film.

9. The substrate according to claim 7 , wherein the body to be processed is a semiconductor substrate on which a part or whole of semiconductor circuits have been formed, and the silicon-containing film is formed by applying the composition for forming a coating type silicon-containing film by spin-coating onto the semiconductor substrate and then baking the same.

10. A patterning process comprising:
forming an organic under layer film on a body to be processed by using a coating type organic under layer film material;
forming a silicon-containing film on the organic under layer film by using the composition for forming a coating type silicon-containing film according to claim 1 ;
forming an upper layer resist film on the silicon-containing film;
forming a pattern with the upper layer resist film;
transferring the pattern to the silicon-containing film by etching using the upper layer resist film having the formed pattern as a mask; and
transferring the pattern to the organic under layer film by etching using the silicon-containing film having the transferred pattern as a mask to form a mask pattern for processing the body to be processed.

11. A patterning process comprising:
forming a hard mask mainly consisting of carbon on a body to be processed by a CVD method;
forming a silicon-containing film on the hard mask by using the composition for forming a coating type silicon-containing film according to claim 1 ;
forming an upper layer resist film on the silicon-containing film;
forming a pattern with the upper layer resist film;
transferring the pattern to the silicon-containing film by etching using the upper layer resist film having the formed pattern as a mask; and
transferring the pattern to the hard mask by etching using the silicon-containing film having the transferred pattern as a mask to form a mask pattern for processing the body to be processed.

12. The patterning process according to claim 10 , further comprising removing the silicon-containing film by wet etching after forming the mask pattern for processing the body to be processed.

13. The patterning process according to claim 11 , further comprising removing the silicon-containing film by wet etching after forming the mask pattern for processing the body to be processed.

14. The patterning process according to claim 12 , wherein the wet etching is performed by an alkaline solution.

Assignees

• Shinetsu Chemical Co

Inventors

• Tachibana Seiichiro
• Taneda Yoshinori
• Kikuchi Rie
• Ogihara Tsutomu

Classifications

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/692 Primary

  characterised by their composition, e.g. multilayer masks or materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title