Conductive external connector structure and method of forming

Patent metadata

Field	Value
Publication number	US-9875979-B2
Application number	US-201514942226-A
Country	US
Kind code	B2
Filing date	Nov 16, 2015
Priority date	Nov 16, 2015
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

External electrical connectors and methods of forming such external electrical connectors are discussed. A method includes forming an external electrical connector structure on a substrate. The forming the external electrical connector structure includes plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution. The method further includes plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution. The second agitation level affected at the substrate is greater than the first agitation level affected at the substrate. The plating the solder further forms a shell on a sidewall of the external electrical connector structure.

First claim

What is claimed is:

1. A method comprising:
forming an external electrical connector structure on a substrate, the forming the external electrical connector structure comprising plating a pillar on the substrate at a first agitation level affected at the substrate in a first solution, wherein the first agitation level is greater than zero; and
plating solder on the external electrical connector structure at a second agitation level affected at the substrate in a second solution, the second agitation level affected at the substrate being greater than the first agitation level affected at the substrate, the plating the solder further forming a shell on a sidewall of the external electrical connector structure.

2. The method of claim 1 , wherein the forming the external electrical connector structure further comprises plating a barrier layer on the pillar at the first agitation level at the substrate in a third solution.

3. The method of claim 2 , wherein the shell is formed on a sidewall of the barrier layer and on a sidewall of the pillar.

4. The method of claim 1 , wherein the plating the pillar is performed in a first plating system, the first plating system comprising a first paddle, the plating the pillar comprising reciprocating the first paddle in the first solution to cause the first agitation level affected at the substrate, and wherein the plating the solder is performed in a second plating system, the second plating system comprising a second paddle, the plating the solder comprising reciprocating the second paddle in the second solution to cause the second agitation level affected at the substrate.

5. The method of claim 4 , wherein the first paddle is reciprocated at a first frequency, and the second paddle is reciprocated at a second frequency greater the first frequency.

6. The method of claim 5 , wherein the first paddle is at a first distance from the substrate during the plating the pillar, and the second paddle is at a second distance from the substrate during the plating the solder, the second distance being equal to the first distance.

7. The method of claim 4 , wherein the first paddle is at a first distance from the substrate during the plating the pillar, and the second paddle is at a second distance from the substrate during the plating the solder, the second distance being less than the first distance.

8. The method of claim 7 , wherein the first paddle is reciprocated at a first frequency, and the second paddle is reciprocated at a second frequency equal to the first frequency.

9. The method of claim 7 , wherein the first paddle is reciprocated along a first direction with respect to the substrate, and the second paddle is reciprocated along a second direction with respect to the substrate, the second direction being different from the first direction.

10. The method of claim 7 , wherein the first paddle is reciprocated along a first direction with respect to the substrate, and the second paddle is reciprocated along a second direction with respect to the substrate, the second direction being perpendicular to the first direction.

11. The method of claim 1 further comprising reflowing the solder, the shell remaining on the sidewall of the external electrical connector structure after the reflowing.

12. The method of claim 11 , wherein the shell includes an intermetallic compound (IMC) after the reflowing.

13. The method of claim 1 further comprising:
forming an under bump metallurgy (UBM) on the substrate, the pillar being plated on the UBM on the substrate; and
after the plating the solder, etching a portion of the UBM while the shell is on the sidewall of the external electrical connector structure.

14. The method of claim 13 , wherein the etching further etches a portion of the pillar, a first width of the pillar proximate the substrate is less than a second width of the pillar distal from the substrate.

15. A method comprising:
plating a pillar on a substrate using a first plating system, the pillar being at least a part of an external electrical connector structure, the first plating system comprising a first paddle, the first paddle being reciprocated at a first positive frequency in a first plating solution during the plating the pillar; and
plating solder on the external electrical connector structure using a second plating system, the second plating system comprising a second paddle, the second paddle being reciprocated at a second frequency in a second plating solution during the plating the solder, the second frequency being greater than the first positive frequency, the plating the solder further forming a shell along a sidewall of the external electrical connector structure.

16. The method of claim 15 , wherein the first positive frequency is equal to or less than 300 revolutions per minute (RPM), and the second frequency is equal to or greater than 400 RPM.

17. The method of claim 15 further comprising:
forming an under bump metallurgy (UBM) on the substrate, the pillar being plated on the UBM on the substrate;
after the plating the solder, etching a portion of the UBM while the shell is on the sidewall of the external electrical connector structure; and
after the etching, reflowing the solder, the shell remaining on the sidewall of the external electrical connector structure after the reflowing.

18. A method comprising:
forming an under bump metallurgy (UBM) on a substrate;
forming a mask on the UBM, an opening through the mask exposing a portion of the UBM;
plating a pillar on the UBM in the opening through the mask, the pillar being part of an external electrical connector; and
plating a solder on the external electrical connector, the plating the solder further comprising causing the mask to flex causing a gap between the mask and a sidewall of the external electrical connector, a shell being formed along the sidewall of the external electrical connector and between the mask and the sidewall of the external electrical connector in the gap.

19. The method of claim 18 , wherein the plating the solder comprises using a first agitation level affected at the substrate greater than a second agitation level affected at the substrate of the plating the pillar, the first agitation level affected at the substrate causing the mask to flex.

20. A method of manufacturing a semiconductor device, the method comprising:
forming a conductive pillar located over a conductive member over a substrate;
placing a reflowable material located over the conductive pillar, wherein the placing the reflowable material further comprises:
placing a first portion located over a first surface of the conductive pillar, wherein the first surface faces away from the conductive member, wherein the first portion has a first concentration of a first component; and
placing a second portion located adjacent to but not fully covering a second surface of the conductive pillar, wherein the second surface extends from the first surface towards the substrate, wherein the second portion has a second concentration of the first component greater than the first concentration.

21. The method of claim 20 , wherein the first component is silver.

22. The method of claim 20 , wherein the conductive pillar has a first width at a first point covered by the reflowable material and a second width less than the first width at a second point not covered by the reflowable material, wherein the first width is parallel to a major surface of the substrate.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Shih Meng-Fu
• Lo Chun-Yen
• Huang Cheng-Lin
• Chen Wen-Ming
• Huang Chien-Ming
• Liu yuan-fu
• Cheng Yung-Chiuan
• Huang Wei-Chih
• Liu Chen-Hsun
• Chan Chien-Pin
• Hsu Yu-Nu
• Lin Chi-Hung
• Pang Te-Hsun
• Ku Chin-Yu

Classifications

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/019

  of bond pads · CPC title