Process for manufacturing a plurality of structures

Patent metadata

Field	Value
Publication number	US-9875914-B2
Application number	US-201414898937-A
Country	US
Kind code	B2
Filing date	Jun 11, 2014
Priority date	Jun 18, 2013
Publication date	Jan 23, 2018
Grant date	Jan 23, 2018

Abstract

A process comprises the following steps: a) provision of a chamber suitable for receiving a plurality of structures, b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in an oxide of a dielectric diffuses through an active layer reacts with semiconductor material of the active layer and produces a volatile material, the process being noteworthy in that the step b) is carried out so that the gas stream has a rate of circulation between the plurality of structures greater than the rate of diffusion of the volatile material into the gas stream.

First claim

The invention claimed is:

1. A process for manufacturing a plurality of structures, each successively comprising a substrate, a dielectric comprising an oxide, and an active layer comprising a semiconductor material, the process comprising the following steps:
(a) provision of a chamber suitable for receiving the plurality of structures, wherein the chamber extends along a longitudinal axis;
(b) circulation of a gas stream in the chamber so that the chamber has a non-oxidizing atmosphere, comprising an injection of the gas stream into the chamber, the injection being directed parallel to the longitudinal axis; and
(c) heat treatment of the plurality of structures at a temperature above a threshold value above which the oxygen present in the oxide of the dielectric diffuses through the active layer, reacts with the semiconductor material of the active layer, and produces a volatile material, wherein steps b) and c) are carried out so that the gas stream has a rate (V f ) of circulation between the plurality of structures greater than a rate (V d ) of diffusion of the volatile material into the gas stream, and wherein steps b) and c) are carried out so that V f /V d ≧100;
wherein step a) comprises a step that includes equipping the chamber with guide means arranged in order to guide the gas stream injected into the vicinity of the active layer of each structure.

2. The process of claim 1 , wherein step a) further comprises equipping the chamber with support members arranged in order to support the plurality of structures, and wherein the support members are rotatably movable relative to the chamber about the longitudinal axis so that the gas stream circulates in the vicinity of the active layer of each structure.

3. The process of claim 2 , wherein the support members arranged in order to support a structure form a helix that winds partially around the longitudinal axis, each of the support members forming a blade of the helix.

4. The process of claim 1 , further comprising discharging the gas stream out of the chamber, and wherein a portion of the gas stream discharged is reinjected into the chamber.

5. The process of claim 1 , wherein the active layer of each structure has a free surface, wherein step a) comprises equipping the chamber with support means arranged in order to support the plurality of structures, and wherein the process comprises setting the support means in rotational motion about an axis perpendicular to the free surface of the active layer of each structure.

6. The process of claim 1 , wherein the dielectric comprises silicon dioxide, the semiconductor material of the active layer comprises silicon, and the volatile material produced comprises silicon monoxide.

7. The process of claim 1 , wherein the heat treatment of the plurality of structures is carried out at a temperature above 1150° C. and for a duration of less than 4 hours.

8. The process of claim 1 , wherein steps b) and c) are carried out so that V f /V d ≧1000.

9. The process of claim 8 , wherein step b) is carried out so that the gas stream circulates in the vicinity of the active layer of each structure.

10. The process of claim 8 , further comprising discharging the gas stream out of the chamber, and wherein a portion of the gas stream discharged is reinjected into the chamber.

11. The process of claim 8 , wherein the active layer of each structure has a free surface, wherein step a) comprises equipping the chamber with support means arranged in order to support the plurality of structures, and wherein the process comprises setting the support means in rotational motion about an axis perpendicular to the free surface of the active layer of each structure.

12. The process of claim 1 , wherein the guide means comprise fins positioned around the perimeter of the chamber.

Assignees

• Soitec Silicon On Insulator

Inventors

• Landru Didier
• Kononchuk Oleg
• Gourdel Christophe
• David Carole
• Mougel Sebastien
• Schneider Xavier

Classifications

• H10W10/181

  Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers · CPC title

• H10P90/1906 Primary

  Preparing SOI wafers · CPC title

• H10P72/7618

  characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel · CPC title

• H10P72/7611

  characterised by edge profile or support profile · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title