Organic thin film transistor, method for manufacturing the same and method for recoverying insulation thereof

Patent metadata

Field	Value
Publication number	US-9865830-B2
Application number	US-201615184571-A
Country	US
Kind code	B2
Filing date	Jun 16, 2016
Priority date	Jun 16, 2015
Publication date	Jan 9, 2018
Grant date	Jan 9, 2018

Abstract

Provided are an organic thin film transistor, a method for manufacturing the same, and a method for recovering insulation thereof. Specifically, the organic thin film transistor includes a substrate, a gate electrode, a semiconductor pattern, a source electrode, a drain electrode and a gate insulation layer. The gate electrode is disposed on the substrate. The semiconductor pattern is electrically insulated with the gate electrode on the substrate. The source electrode and the drain electrode are each electrically connected to the semiconductor pattern on the substrate, and are separated from each other. The gate insulation layer is disposed between the semiconductor pattern and the gate electrode. The gate insulation layer is a sulfur copolymer thin film.

First claim

What is claimed is:

1. An organic thin film transistor comprising:
a substrate;
a gate electrode disposed on the substrate;
a semiconductor pattern electrically insulated with the gate electrode on the substrate;
a source electrode and a drain electrode electrically connected to the semiconductor pattern on the substrate and separated from each other; and
a gate insulation layer disposed between the semiconductor pattern and the gate electrode,
wherein the gate insulation layer is a sulfur copolymer thin film, and
wherein the sulfur copolymer thin film has more disulfide bonds than carbon-sulfur bonds.

2. The organic thin film transistor of claim 1 , wherein the sulfur copolymer thin film includes poly(sulfur-random-1,3-diisopropenylbenzene).

3. The organic thin film transistor of claim 1 , wherein the sulfur copolymer thin film includes sulfur in greater than or equal to 50 parts by weight and less than or equal to 60 parts by weight.

4. The organic thin film transistor of claim 1 , wherein the sulfur copolymer thin film has a thickness of 50 nm to 200 nm.

5. The organic thin film transistor of claim 1 , wherein the sulfur copolymer thin film is at least partially insulation recovered by heat treatment in the breakdown of insulation.

6. The organic thin film transistor of claim 1 , wherein the gate insulation layer is disposed on the gate electrode.

7. The organic thin film transistor of claim 1 , wherein the gate insulation layer is disposed on the semiconductor pattern.

8. The organic thin film transistor of claim 1 , wherein the source electrode and the drain electrode are disposed on the semiconductor pattern.

9. The organic thin film transistor of claim 1 , wherein the semiconductor pattern is disposed on the source electrode and the drain electrode.

10. The organic thin film transistor of claim 1 , wherein the semiconductor pattern includes an organic semiconductor compound.

11. The organic thin film transistor of claim 10 , wherein the organic semiconductor compound includes a compound selected from the group consisting of pentacene, tetracene, dinaphthofuran, dinaphthothiophene, dinaphthoselenophene, dianthrafuran, dianthrathiophene and dianthraselenophene.

12. The organic thin film transistor of claim 1 , wherein the gate electrode, the source electrode and the drain electrode each include a material selected from the group consisting of Ag, Al, Au, Pt, Ta, Ti, Mo, Nb, Cu, In, Ni, Nd, Cr, indium tin oxide (ITO), indium zinc oxide (IZO), aluminum doped zinc oxide (AZO), gallium doped zinc oxide (GZO), indium gallium zinc oxide (IGZO) and indium tin zinc oxide (ITZO), or a conductive polymer.

13. A method for manufacturing an organic thin film transistor, the method comprising:
forming a gate electrode on a substrate;
forming a sulfur copolymer thin film on the substrate so as to cover the gate electrode;
forming a semiconductor pattern on the sulfur copolymer thin film so as to at least partially overlap the gate electrode; and
forming a source electrode at least partially overlapping a first end of the semiconductor pattern, and forming a drain electrode at least partially overlapping a second end of the semiconductor pattern distinct from the first end of the semiconductor pattern,
wherein the sulfur copolymer thin film has more disulfide bonds than carbon-sulfur bonds.

14. The method for manufacturing an organic thin film transistor of claim 13 , wherein the sulfur copolymer thin film includes poly(sulfur-random-1,3-diisopropenylbenzene).

15. The method for manufacturing an organic thin film transistor of claim 13 , wherein the sulfur copolymer thin film includes sulfur in greater than or equal to 50 parts by weight and less than or equal to 60 parts by weight.

16. The method for manufacturing an organic thin film transistor of claim 13 , wherein the forming of a sulfur copolymer thin film on the substrate so as to cover the gate electrode includes forming a sulfur-polymer compound by mixing liquefied sulfur with 1,3-diisopropenylbenzene (DIB); forming a sulfur copolymer mixed solution by dissolving the sulfur-polymer compound in a 1,2-dichlorobenzene (DCB) solvent; and coating the sulfur copolymer mixed solution on the gate electrode-formed substrate.

17. A method for recovering insulation of an organic thin film transistor that includes a source electrode and a drain electrode disposed on a substrate, a semiconductor pattern electrically connected to the source electrode and the drain electrode, a gate insulation layer electrically insulating the semiconductor pattern, and a gate electrode insulated with the semiconductor pattern having the gate insulation layer provided in between, the method comprising:
etching a top electrode on the gate insulation layer;
heat treating the top electrode-removed gate insulation layer; and
forming the top electrode again on the heat-treated gate insulation layer,
wherein the gate insulation layer is a sulfur copolymer thin film,
wherein the sulfur copolymer thin film has more disulfide bonds than carbon-sulfur bonds, and
wherein the top electrode includes at least any one of the source electrode, the drain electrode and the gate electrode.

18. The method for recovering insulation of an organic thin film transistor of claim 17 , wherein the heat treatment includes heating the gate insulation layer to 100° C. to 200° C.

Assignees

• Gwangju Inst Science & Tech

Inventors

• Yoon Myung-Han
• Char Kookheon
• Kim Eui Tae
• Lee Jae-Hyuk

Classifications

• H01L51/052 Primary

  Electricity · mapped topic

• H01L51/0043

  Electricity · mapped topic

• H01L51/105

  Electricity · mapped topic

• H01L51/0023

  Electricity · mapped topic

• H01L2251/308

  Electricity · mapped topic