Silk transistor devices

Patent metadata

Field	Value
Publication number	US-9142787-B2
Application number	US-201213651379-A
Country	US
Kind code	B2
Filing date	Oct 12, 2012
Priority date	Aug 31, 2009
Publication date	Sep 22, 2015
Grant date	Sep 22, 2015

Abstract

The invention relates to ecosustainable and biocompatible, low cost, ambient friendly electronic and optoelectronic devices, such as transistors and light-emitting transistors, made with silk fibroin or blended with other biopolymers, methods for fabrication and methods of using the silk-based electronics and optoelectronics. The silk-based electronics and optoelectronics can be implanted in vivo and in vitro for biomedical applications, such as for drug discovery or drug screening assays and devices. The silk-based devices may be used in the food industry and embedded in packaging for tracking and sensing, for security purposes or exploited as disposable not harmful for the environment efficient general electronic and optoelectronic devices.

First claim

What is claimed is:

1. A silk-based transistor comprising:
a substrate including a gate contact;
a silk dielectric layer positioned over the substrate;
at least one active layer positioned over the silk dielectric layer comprising:
an organic semiconducting material; and
a silk matrix embedded with an electronically active biological material
comprising excitable living cells, tissues, and/or organisms; and

source and drain contacts positioned over the active layer,
wherein the silk-based transistor is characterized in that activity and/or functionality of the excitable living cells, tissues, and/or organisms is modulated when exposed to an agent and/or an electric field.

2. The silk-based transistor of claim 1 , wherein the source, drain and gate contacts, substrate, active layer and silk dielectric layer are biocompatible.

3. The silk-based transistor of claim 1 , wherein the source, drain, or gate contact is a metal or metal oxide selected from the group consisting of gold, copper, iron, aluminum, indium-tin-oxide, and combination thereof.

4. The silk-based transistor of claim 1 , wherein the organic semiconducting material is p-type, n-type or p-n junction type.

5. The silk-based transistor of claim 1 , wherein the active layer is a combination of multiple layers which present charge transport and/or light emitting properties.

6. The silk-based transistor of claim 1 , wherein the organic semiconducting material is selected from a group consisting of: thiophene derivatives, perylene derivatives, fluorine derivatives, phenyl derivatives, organometallic complexes, organic dyes, semiconducting quantum dots, metal nanoparticles and any combinations thereof.

7. The silk-based transistor of any one of claims 1 - 6 , wherein the organic semiconducting material is light-emitting.

8. The silk-based transistor of claim 1 , wherein the active layer further comprises one or more light-emitting elements.

9. The silk-based transistor of claim 8 , wherein the light emitting element is selected from the group consisting of organometallic complexes, organic dyes, semiconducting quantum dots, metal nanoparticles and combinations thereof.

10. The silk-based transistor of any of claims 1 - 6 , wherein the silk dielectric layer further comprises one or more non-conducting biocompatible polymers.

11. The silk-based transistor of any of claims 1 - 6 , wherein the excitable living cells, tissues, and/or organisms comprises ion channels.

Assignees

• Tufts University Trustees Of Tufts College
• Univ Tufts

Inventors

• Omenetto Fiorenzo
• Kaplan David L
• Amsden Jason
• Capelli Raffaella
• Toffanin Stefano
• Benfenati Valentina
• Muccini Michele
• Zamboni Roberto

Classifications

• H01L51/0566

  Electricity · mapped topic

• C07K14/43586

  from silkworms · CPC title

• H01L51/0036

  Electricity · mapped topic

• H01L51/0053

  Electricity · mapped topic

• H01L51/0545

  Electricity · mapped topic