Method for manufacturing semiconductor device including organic semiconductor

Patent metadata

Field	Value
Publication number	US-9150953-B2
Application number	US-65908905-A
Country	US
Kind code	B2
Filing date	Aug 5, 2005
Priority date	Aug 13, 2004
Publication date	Oct 6, 2015
Grant date	Oct 6, 2015

Abstract

The present invention provides a method for manufacturing a semiconductor device which can reduce characteristic deterioration due to impurity incorporation. The present invention also provides a semiconductor device and an electric appliance with reduced characteristic deterioration due to the impurity incorporation. The method for manufacturing a semiconductor device has a process for depositing an organic semiconductor. In addition, a process for introducing and exhausting gas having low reactivity while heating a treater so that temperature in the inside of the treater is higher than sublimation temperature of the organic semiconductor after taking a subject deposited with the organic semiconductor from the treater.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device comprising the steps of:
placing a substrate above a crucible in a treater, wherein the crucible contains a raw material;
heating and sublimating the raw material to deposit an organic semiconductor over the substrate in the treater while introducing a first gas from below the crucible and the substrate;
removing the substrate from the treater after depositing the organic semiconductor; and
introducing a second gas into the treater and exhausting the second gas while heating the treater so that temperature in an inside of the treater is higher than a sublimation temperature of the organic semiconductor after removing the substrate from the treater,
wherein the treater includes an outer tube and an inner tube,
wherein the outer tube includes a curved top surface,
wherein a top end portion of the inner tube is curved along the curved top surface of the outer tube, and
wherein the inner tube has an opening at a top portion thereof to flow the first gas and the second gas between the outer tube and the inner tube.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the first gas and the second gas are same.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein the organic semiconductor is pentacene.

4. A method for manufacturing a semiconductor device comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating layer over the gate electrode;
forming a source electrode and a drain electrode over the gate insulating layer;
placing the substrate above a crucible in a treater, wherein the crucible contains a raw material;
heating and sublimating the raw material to deposit an organic semiconductor while introducing a first gas from below the crucible and the substrate to form an active layer over the gate insulating layer and the source electrode and the drain electrode to be overlapped with the gate electrode;
removing the substrate from the treater after depositing the organic semiconductor; and
introducing a second gas into the treater and exhausting the second gas while heating the treater so that temperature in an inside of the treater is higher than a sublimation temperature of the organic semiconductor after removing the substrate from the treater,
wherein the treater includes an outer tube and an inner tube,
wherein the outer tube includes a curved top surface, and
wherein a top end portion of the inner tube is curved along the curved top surface of the outer tube, and
wherein the inner tube has an opening at a top portion thereof to flow the first gas and the second gas between the outer tube and the inner tube.

5. The method for manufacturing a semiconductor device according to claim 1 , further comprising a step of collecting the organic semiconductor in the second gas after exhausting the second gas.

6. The method for manufacturing a semiconductor device according to claim 1 , wherein the treater is set to a pressure from 0.1 to 50 torr during depositing the organic semiconductor.

7. The method for manufacturing a semiconductor device according to claim 1 , wherein the second gas comprises at least one of a nitrogen gas and a rare gas.

8. A method for manufacturing a semiconductor device comprising the steps of:
forming a gate electrode over a substrate;
forming a gate insulating layer over the gate electrode;
placing the substrate above a crucible in a treater, wherein the crucible contains a raw material;
heating and sublimating the raw material to deposit an organic semiconductor while introducing a first gas from below the crucible and the substrate to form an active layer over the gate insulating layer;
removing the substrate from the treater after depositing the organic semiconductor;
introducing a second gas into the treater and exhausting the second gas while heating the treater so that temperature in an inside of the treater is higher than a sublimation temperature of the organic semiconductor after removing the substrate from the treater; and
forming a source electrode and a drain electrode over the active layer,
wherein the treater includes an outer tube and an inner tube,
wherein the outer tube includes a curved top surface,
wherein a top end portion of the inner tube is curved along the curved top surface of the outer tube, and
wherein the inner tube has an opening at a top portion thereof to flow the first gas and the second gas between the outer tube and the inner tube.

9. The method for manufacturing a semiconductor device according to claim 8 , wherein the first gas and the second gas are same.

10. The method for manufacturing a semiconductor device according to claim 8 , wherein the organic semiconductor is pentacene.

11. The method for manufacturing a semiconductor device according to claim 8 , further comprising a step of collecting the organic semiconductor in the second gas after exhausting the second gas.

12. The method for manufacturing a semiconductor device according to claim 8 , wherein the treater is set to a pressure from 0.1 to 50 torr during depositing the organic semiconductor.

13. The method for manufacturing a semiconductor device according to claim 8 , wherein the second gas comprises at least one of a nitrogen gas and a rare gas.

14. An electric appliance having a semiconductor device manufactured by the method for manufacturing a semiconductor device according to any one of claims 1 , 8 and 4 .

15. The method for manufacturing a semiconductor device according to claim 4 , wherein the first gas and the second gas are same.

16. The method for manufacturing a semiconductor device according to claim 4 , wherein the organic semiconductor is pentacene.

17. The method for manufacturing a semiconductor device according to claim 4 , further comprising a step of collecting the organic semiconductor in the second gas after exhausting the second gas.

18. The method for manufacturing a semiconductor device according to claim 4 , wherein the treater is set to a pressure from 0.1 to 50 torr during depositing the organic semiconductor.

19. The method for manufacturing a semiconductor device according to claim 4 , wherein the second gas comprises at least one of a nitrogen gas and a rare gas.

Assignees

• Hirakata Yoshiharu
• Yamazaki Shunpei
• Semiconductor Energy Lab

Inventors

• Hirakata Yoshiharu
• Yamazaki Shunpei

Classifications

• C23C14/24

  Vacuum evaporation · CPC title

• C23C14/564

  Means for minimising impurities in the coating chamber such as dust, moisture, residual gases · CPC title

• H01L51/0002

  Electricity · mapped topic

• H01L51/052

  Electricity · mapped topic

• C23C14/12

  Organic material · CPC title