Method for depositing a metal chalcogenide on a substrate by cyclical deposition
US-2019272993-A1 · Sep 5, 2019 · US
US9863040B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9863040-B2 |
| Application number | US-201615178601-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 10, 2016 |
| Priority date | Sep 26, 2013 |
| Publication date | Jan 9, 2018 |
| Grant date | Jan 9, 2018 |
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A method is directed to increasing the hardness of zinc sulfide. The hardness of zinc sulfide is increased by adding selective elements within a specified range to the crystal lattice of the zinc sulfide. The increased hardness over conventional zinc sulfide does not substantially compromise the optical properties of the zinc sulfide. The zinc sulfide may be used as a protective coating for windows and domes.
Opening claim text (preview).
What is claimed is: 1. A method comprising: a) providing a source of zinc, a source of sulfur and a source of one or more dopants chosen from selenium and silicon; b) injecting the source of zinc as a gas at 0.2 to 1 slpm, the source of sulfur as a gas at 0.1 to 0.9 slpm and the one or more sources of selenium and silicon as a gas at 0.01 slpm to 0.1 slpm into a chemical vapor deposition chamber comprising an inert gas, the pressure in the chemical vapor deposition chamber ranges from 20 to 50 Torr; and c) chemical vapor depositing one or more layers of a composition comprising zinc sulfide and 0.5 molar % to 10 molar % of one or more of the dopants chosen from selenium and silicon on a substrate, a temperature of the substrate is from 600° C. to 800° C. 2. The method of claim 1 , further comprising treating the composition comprising zinc sulfide and 0.5 molar % to 10 molar % of one or more of the dopants chosen from selenium and silicon by a HIP process.
AII BVI compounds, where A is Zn, Cd or Hg and B is S, Se or Te · CPC title
Sulfides, selenides, or tellurides · CPC title
on temporary substrates, e.g. substrates subsequently removed by etching · CPC title
Sulfides · CPC title
with other inorganic material (C03C17/34, C03C17/44 take precedence) · CPC title
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