Method for depositing a metal chalcogenide on a substrate by cyclical deposition

Patent metadata

Field	Value
Publication number	US-10319588-B2
Application number	US-201715729485-A
Country	US
Kind code	B2
Filing date	Oct 10, 2017
Priority date	Oct 10, 2017
Publication date	Jun 11, 2019
Grant date	Jun 11, 2019

Abstract

A method for depositing a metal chalcogenide on a substrate by cyclical deposition is disclosed. The method may include, contacting the substrate with at least one metal containing vapor phase reactant and contacting the substrate with at least one chalcogen containing vapor phase reactant. Semiconductor device structures including a metal chalcogenide deposited by the methods of the disclosure are also provided.

First claim

What is claimed is:

1. A method for depositing a metal chalcogenide on a substrate by cyclical deposition, the method comprising:
contacting the substrate with at least one metal containing vapor phase reactant comprising, a partial chemical structure represented by the formula M-O—C, wherein a metal (M) atom is bonded to an oxygen (O) atom, and said oxygen (O) atom is bonded to a carbon (C) atom, and wherein M is selected from the group consisting of tin (Sn) and germanium (Ge); and
contacting the substrate with at least one chalcogen containing vapor phase reactant.

2. The method of claim 1 , wherein the metal chalcogenide comprises a metal dichalcogenide.

3. The method of claim 1 , wherein the at least one chalcogen containing vapor phase reactant comprises S, Se, or Te.

4. The method of claim 1 , wherein the metal chalcogenide comprises an oxygen (O) content less than 10 atomic-%.

5. The method of claim 1 , wherein the cyclical deposition comprises atomic layer deposition.

6. The method of claim 1 , wherein the cyclical deposition comprises cyclical chemical vapor deposition.

7. The method of claim 1 , wherein the metal containing vapor phase reactant comprises metal (IV) tert-butoxide (M(O t Bu) 4 ).

8. The method of claim 1 , wherein the tin (Sn) containing vapor phase reactant is represented by the chemical formula Sn(OR) x , wherein R is a C 1 -C 5 alkyl group and x is an integer from 2-6.

9. The method of claim 7 , wherein the at least one tin (Sn) containing vapor phase reactant comprises tin (IV) acetate.

10. The method of claim 7 , wherein the at least one tin (Sn) containing vapor phase reactant is represented by the partial formula:

wherein a tin (Sn) atom is bonded to two oxygen (O) atoms, and said oxygen (O) atoms are bonded to a carbon atom (C) through one single bond and one double bond, and R comprises a hydrocarbon group.

11. The method of claim 7 , wherein the at least one tin (Sn) containing vapor phase reactant is represented by the partial formula:

wherein a tin (Sn) atom is bonded to two oxygen (O) atoms, and said oxygen (O) atoms are bonded to a carbon atom (C) through one single bond and one double bond, and R is a hydrocarbon group, and L is a further hydrocarbon group.

12. The method of claim 7 , wherein the at least one tin (Sn) containing vapor phase reactant is represented by the partial chemical formula:
L-Sn—O—C

wherein a tin (Sn) atom is bonded to an oxygen (O) atom, and said oxygen (O) atom is bonded to a carbon atom (C), and L is a hydrocarbon group.

13. The method of claim 1 , wherein the at least one chalcogen containing vapor phase reactant comprises hydrogen sulfide (H 2 S), hydrogen selenide (H 2 Se), dimethyl sulfide ((CH 3 ) 2 S), or dimethyl telluride (CH 3 ) 2 Te.

14. The method of claim 1 , wherein the method comprises at least one deposition cycle in which the substrate is alternately and sequentially contacted with the at least metal containing vapor phase reactant and the at least one chalcogen containing vapor phase reactant.

15. The method of claim 14 , wherein the deposition cycle is repeated two or more times.

16. The method of claim 1 , further comprising heating the substrate to a temperature of approximately greater than 150° C.

17. The method of claim 16 , further comprising heating the substrate to a temperature of less than approximately 500° C.

18. The method of claim 1 , wherein the metal chalcogenide comprises tin disulfide.

19. The method of claim 1 , wherein the metal chalcogenide comprises germanium disulfide.

20. The method of claim 1 , further comprising a post-deposition annealing of the metal chalcogenide at a temperature between approximately 150° C. and approximately 300° C.

21. The method of claim 20 , wherein the post-deposition annealing of the metal chalcogenide is performed in a hydrogen sulfide (H 2 S) atmosphere.

22. A semiconductor device structure comprising a metal chalcogenide deposited by the method of claim 1 .

23. The semiconductor device structure of claim 22 , wherein the metal chalcogenide comprises at least a portion of the channel region in a transistor structure.

24. A reaction system configured to perform the method of claim 1 .

Assignees

• Asm Ip Holding Bv

Inventors

• Mattinen Miika
• Ritala Mikko
• Leskelä Markku

Classifications

• H10P14/3238

  being insulating materials · CPC title

• H10P14/2905

  Silicon, silicon germanium or germanium · CPC title

• H10P14/38

  characterised by treatments done after the formation of the materials · CPC title

• H10P14/24

  using chemical vapour deposition [CVD] · CPC title

• H10P14/3436 Primary

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title