Passivated microelectromechanical structures and methods
US-9395533-B2 · Jul 19, 2016 · US
Method for manufacturing thin-film support beam
US9862595B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9862595-B2 |
| Application number | US-201415023057-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 4, 2014 |
| Priority date | Jan 7, 2014 |
| Publication date | Jan 9, 2018 |
| Grant date | Jan 9, 2018 |
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Abstract
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A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern at the moment; photoetching and etching on the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of manufacturing a film support beam, comprising: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer; patterning the metal film layer, and dividing a patterned area of the metal film layer into a metal film pattern of a support beam portion and a metal film pattern of a non-support beam portion, wherein a width of the metal film pattern of the support beam portion is greater than a width of a final support beam pattern, and a width of the metal film pattern of the non-support beam portion is equal to a width of a width of a final non-support beam pattern; photoetching and etching the metal film layer and the dielectric film layer to obtain the final support beam pattern, the final non-support beam pattern, and a final dielectric film layer, wherein the final dielectric film layer serves as a support film of the final support beam pattern and the final non-support beam pattern; and removing the sacrificial layer. 2. The method of manufacturing the film support beam of claim 1 , wherein the sacrificial layer is made of polyimide, and the sacrificial layer has a thickness of from 500 nm to 3000 nm. 3. The method of manufacturing the film support beam of claim 1 , wherein the sacrificial layer is made of porous silicon. 4. The method of manufacturing the film support beam of claim 1 , wherein the dielectric film is made of SiO 2 , and the dielectric film layer has a thickness of from 100 nm to 2000 nm. 5. The method of manufacturing the film support beam of claim 1 , wherein the dielectric film is made of SiN. 6. The method of manufacturing the film support beam of claim 1 , wherein the metal film is made of Al, and the metal film layer has a thickness of from 100 nm to 3000 nm. 7. The method of manufacturing the film support beam of claim 6 , wherein the metal film is made of TiN. 8. The method of manufacturing the film support beam of claim 1 , wherein the sacrificial layer is removed by oxygen.
Assignees
Inventors
Classifications
Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108 · CPC title
Etching · CPC title
Sacrificial polymer, ashing of organics · CPC title
- B81C1/00142Primary
Bridges (deformable micromirrors G02B26/0841) · CPC title
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- What does patent US9862595B2 cover?
- A method for manufacturing a film support beam includes: providing a substrate having opposed first and second surfaces; coating a sacrificial layer on the first surface of the substrate, and patterning the sacrificial layer; depositing a dielectric film on the sacrificial layer to form a dielectric film layer, and depositing a metal film on the dielectric film layer to form a metal film layer;…
- Who is the assignee on this patent?
- Csmc Technologies Fab1 Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification B81C1/00142. Mapped technology areas include Operations & Transport.
- When was this patent published?
- Publication date Tue Jan 09 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).