Method for bonding bare chip dies

Patent metadata

Field	Value
Publication number	US-9859247-B2
Application number	US-201314441714-A
Country	US
Kind code	B2
Filing date	Nov 8, 2013
Priority date	Nov 9, 2012
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

A method is provided for assembly of a micro-electronic component, in which a conductive die bonding material is used. This material includes a conductive thermosettable resin material or flux based solder and a dynamic release layer adjacent to the conductive thermoplastic material die bonding material layer A laser beam is impinged on the dynamic release layer, adjacent to the die bonding material layer, in such a way that the dynamic release layer is activated to direct conductive die bonding material matter towards the pad structure to be treated, to cover a selected part of the pad structure with a transferred conductive die bonding material. The laser beam is restricted in timing and energy, in such a way that the die bonding material matter remains thermosetting. Accordingly, adhesive matter can be transferred while preventing that the adhesive is rendered ineffective by thermal overexposure in the transferring process.

First claim

The invention claimed is:

1. A bonding method of a micro-electronic component, in particular, a bare die component having one or more electrical connection pads, on a substrate having on its substrate surface a connection pad structure arranged for interconnecting the micro-electronic component via a respective one or more connection pads, the method comprising the steps of:
providing a donor film comprising a bonding material of a curable conductive adhesive or flux based solder paste and a dynamic release layer adjacent to the bonding material layer;
aligning a laser beam of a laser system and guiding the donor film in an X-Y fashion over the substrate at a distance from the substrate surface;
impinging the laser beam on the dynamic release layer; in such a way that the dynamic release layer is activated to cover a selected part of the connection pads or the connection pad structure with bonding material transferred from the bonding material layer; and
administering the micro-electronic component with its one or more electrical connection pads to the pad structure, so that the bonding material on one or both of the pads and the pad structure forms an electrical connection between the pad structure and a respective pad; and
bonding the micro-electronic component with a shear strength of more than 1 Mpa, by curing the conductive adhesive or reflowing the solder paste of the bonding material.

2. A method according to claim 1 , wherein the bonding material is thermoplastic in an operating temperature region and that is thermosetting in a curing temperature region with a temperature elevated from the operating temperature.

3. A method according to claim 1 wherein the operating temperature ranges in a range of 10 degrees Celsius to 180 degrees Celsius.

4. A method according to claim 1 wherein the substrate is a flexible substrate having a radius of curvature of at least 1 cm.

5. A method according to claim 1 , wherein a distance to the die surface is kept in a range of 1-200 micron.

6. A method according to claim 1 , wherein the die bonding material layer has a thickness in a range between 10-50 micron.

7. A method according to claim 1 , wherein the donor film is provided with a premachined patterning.

8. A method according to claim 7 , wherein premachined patterning forms a grid with a grid size that coincides or is smaller than a laser spot size.

9. A method according to claim 8 , wherein the patterning has a grid pitch ranging of 40-80 micron.

10. A method according to claim 1 , wherein the connection pads are smaller than 80 micrometer.

11. A method according to claim 1 , wherein the bonding material is a viscous thermosetting resin in an operating temperature region, wherein the viscosity ranges between 1 and 160 Pa·s.

12. A method according to claim 1 , wherein the laser beam is restricted in timing and energy, in such a way that transferred bonding matter remains curable or consists of more than 10% volume percent of solder flux.

13. A bonding method of a micro-electronic component, in particular, a bare die component having one or more electrical connection pads, on a substrate having on its substrate surface a connection pad structure arranged for interconnecting the micro-electronic component via a respective one or more connection pads, the method comprising the steps of:
providing a donor film comprising a curable conductive adhesive and a dynamic release layer;
aligning a laser beam of a laser system and guiding the donor film distanced from the substrate surface;
impinging the laser beam on the dynamic release layer; in such a way that the dynamic release layer is activated to cover a selected part of the connection pads or the connection pad structure with adhesive transferred from the donor film; wherein the laser beam is restricted in timing and energy, in such a way that the transferred adhesive remains curable;
administering the micro-electronic component with its one or more electrical connection pads to the pad structure, so that the adhesive on one or both of the pads and the pad structure forms an electrical connection between the pad structure and a respective pad; and
curing the conductive adhesive between the pads and the pad structure to bond the micro-electronic component with a shear strength of more than 1 Mpa.

14. A bonding method of a micro-electronic component, in particular, a bare die component having one or more electrical connection pads, on a substrate having on its substrate surface a connection pad structure arranged for interconnecting the micro- electronic component via a respective one or more connection pads, the method comprising the steps of:
providing a donor film comprising a solder paste and a dynamic release layer;
aligning a laser beam of a laser system and guiding the donor film distanced from the substrate surface;
impinging the laser beam on the dynamic release layer; in such a way that the dynamic release layer is activated to cover a selected part of the connection pads or the connection pad structure with solder paste transferred from the donor film; wherein the laser beam is restricted in timing and energy, in such a way that the transferred solder paste includes flux consisting of more than 10% volume percent of flux;
administering the micro-electronic component with its one or more electrical connection pads to the pad structure, so that the solder paste on one or both of the pads and the pad structure forms an electrical connection between the pad structure and a respective pad; and
reflowing the solder paste between the pads and the pad structure to bond the micro-electronic component with a shear strength of more than 1 Mpa.

Assignees

• Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno
• Imec Vzw

Inventors

• Smits Edsger Constant Pieter
• Perinchery Sandeep Menon
• Van Den Brand Jeroen
• Mandamparambil Rajesh
• Schoo Harmannus Franciscus Maria

Classifications

• H10W99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10W72/07141

  Means for applying energy, e.g. ovens or lasers · CPC title

• H10W72/0112

  Apparatus for manufacturing bump connectors · CPC title

• H10W72/856

  Bump connectors and die-attach connectors (bumps embedded in underfills H10W74/15) · CPC title

• H10W72/20

  Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps · CPC title