Semiconductor device, test system and method of the same

Patent metadata

Field	Value
Publication number	US-9859176-B1
Application number	US-201615339309-A
Country	US
Kind code	B1
Filing date	Oct 31, 2016
Priority date	Oct 31, 2016
Publication date	Jan 2, 2018
Grant date	Jan 2, 2018

Abstract

A semiconductor device is disclosed. The semiconductor device includes: a System on Chip (SoC) die; an integrated passive device (IPD); and a first switch, coupled between the SoC die and the IPD; wherein the IPD and the SoC die are disposed in different wafers and bonded together, and the first switch is controlled to disconnect the IPD from the SoC die when the IPD is under a test; and the first switch is controlled to connect the IPD with the SoC die when the IPD is not under the test. A test system for testing an IPD of a semiconductor device and an associated method are also disclosed.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a system on chip (SoC) die;
an integrated passive device (IPD); and
a first switch, coupled between the SoC die and the IPD;
wherein the IPD and the SoC die are disposed in different wafers and bonded, and the first switch is controlled to disconnect the IPD from the SoC die when the IPD is under a test; and the first switch is controlled to connect the IPD with the SoC die when the IPD is not under the test.

2. The semiconductor device of claim 1 , further comprising:
a diagnosis test solution (DTS) module, arranged to generate a test signal to the IPD and receive a response from the IPD; and
a second switch, coupled between the DTS module and the IPD;
wherein the first switch and the second switch are controlled by the DTS module.

3. The semiconductor device of claim 2 , wherein the second switch is controlled to connect the IPD with the DTS module when the IPD is under the test; and the second switch is controlled to disconnect the IPD with the DTS module when the IPD is not under the test.

4. The semiconductor device of claim 3 , wherein the DTS module and the SoC die are disposed in a same wafer.

5. The semiconductor device of claim 3 , wherein the DTS module and the SoC die are disposed in different wafers.

6. The semiconductor device of claim 1 , wherein an equivalent circuit of the IPD includes a resistor and a capacitor.

7. The semiconductor device of claim 1 , wherein an equivalent circuit of the IPD includes an inductor.

8. The semiconductor device of claim 2 , wherein the second switch includes an electrically programmable fuse.

9. The semiconductor device of claim 2 , wherein the DTS module includes a comparator.

10. The semiconductor device of claim 2 , wherein the DTS module is integrated with a boundary scan cell (BSC).

11. A semiconductor device, comprising:
a system on chip (SoC) die;
an integrated passive device (IPD);
a first switch, coupled between the SoC die and the IPD;
a diagnosis test solution (DTS) module, arranged to generate a test signal to the IPD and receive a response from the IPD; and
a second switch, coupled between the DTS module and the IPD;
wherein the first switch and the second switch are controlled by the DTS module, and the IPD and the SoC die are disposed in different wafers bonded together.

12. The semiconductor device of claim 11 , wherein when the IPD is under a test mode, the first switch is controlled to be open, and the second switch is controlled to be closed.

13. The semiconductor device of claim 11 , wherein when the IPD is not under a test mode, the first switch is controlled to be closed, and the second switch is controlled to be open.

14. The semiconductor device of claim 11 , wherein the DTS module includes a current mirror circuits.

15. The semiconductor device of claim 11 , wherein the DTS module and the SoC die are disposed in different wafers bonded together, and the DTS module and the IPD are at the same side of the SoC die.

16. The semiconductor device of claim 11 , wherein the DTS module and the SoC die are disposed in the same wafer bonded together.

17. A semiconductor device, comprising:
a substrate; and
a semiconductor package bonded to the substrate, the semiconductor package including:
a system on chip (SoC) die;
an integrated passive device (IPD);
a first switch, coupled between the SoC die and the IPD;
a diagnosis test solution (DTS) module, arranged to generate a test signal to the IPD and receive a response from the IPD; and
a second switch, coupled between the DTS module and the IPD;

wherein the first switch and the second switch are controlled by the DTS module, and the IPD and the SoC die are disposed in different wafers bonded together.

18. The semiconductor device of claim 17 , wherein substrate includes a printed circuit board (PCB).

19. The semiconductor device of claim 17 , wherein the substrate includes a third switch coupled between the SoC die and the IPD.

20. The semiconductor device of claim 19 , wherein the third switch has an equivalent resistance lower than about 1 ohm when the third switch is closed.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chiu Tang-Jung
• Wang Mill-Jer
• Lin Hung-Chih
• Chen Hao

Classifications

• H10W44/241

  for passive devices or passive elements · CPC title

• H10W44/20

  at high-frequency [HF] or radio frequency [RF] · CPC title

• H10W20/493

  Fuses, i.e. interconnections changeable from conductive to non-conductive · CPC title

• G01R1/06772

  High frequency probes · CPC title

• H01L23/5256

  Electricity · mapped topic