Source/drain contacts for non-planar transistors

Patent metadata

Field	Value
Publication number	US-9853156-B2
Application number	US-201514618414-A
Country	US
Kind code	B2
Filing date	Feb 10, 2015
Priority date	Oct 1, 2011
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

First claim

What is claimed is:

1. A microelectronic device, comprising:
a silicon-containing non-planar transistor fin;
a source/drain region in the silicon-containing non-planar fin;
a source/drain contact adjacent the source/drain region, wherein the source/drain contact comprises a conductive contact material and a titanium-containing contact interface layer disposed between conductive contact material and the source/drain region;
a titanium silicide interface disposed between the source/drain region and the titanium-containing contact interface layer; and
a non-planar transistor gate over the non-planar transistor fin, wherein the non-planar transistor gate comprises a gate electrode recessed between gate spacers and a capping structure disposed on the recessed gate electrode between the gate spacers, and wherein the titanium-containing contact interface layer abuts at least a portion of one non-planar transistor gate spacer and/or abuts at least a portion of the capping structure.

2. The microelectronic device of claim 1 , wherein the conductive contact material comprises tungsten.

3. The microelectronic device of claim 1 , wherein the titanium silicide interface resides substantially only between the source/drain region and the titanium-containing contact interface layer.

4. A method of fabricating a microelectronic device, comprising:
forming a silicon-containing non-planar transistor fin;
forming a source/drain region in the silicon-containing non-planar fin;
forming a dielectric material over the source/drain region;
forming a contact opening through the dielectric material to expose a portion of the source/drain region;
conformally depositing a titanium-containing contact interface layer within the contact opening to abut the source/drain region;
depositing a conductive contact material within the contact opening to abut the titanium-containing contact interface layer; and
forming a titanium silicide interface between the source/drain region and the titanium-containing contact interface layer.

5. The method of claim 4 , wherein conformally depositing the titanium-containing contact interface layer comprises depositing a substantially pure titanium contact interface layer.

6. The method of claim 4 , wherein depositing a conductive contact material within the contact opening comprises depositing tungsten within the contact opening.

7. The method of claim 4 , wherein forming the titanium silicide interface between the source/drain region and the titanium-containing contact interface layer comprises forming the titanium silicide interface between the source/drain region and the titanium-containing contact interface layer by heating the source/drain region and the titanium-containing contact interface layer.

8. The method of claim 4 , wherein forming the titanium silicide interface comprises forming the titanium silicide substantially only between the source/drain region and the titanium-containing contact interface layer.

9. The method of claim 4 , wherein forming the non-planar transistor gate comprises forming gate spacers, forming a gate electrode recessed between the gate spacers and disposing a capping structure on the recessed gate electrode between the gate spacers.

10. The method of claim 9 , wherein forming a contact opening through the dielectric material to expose at least a portion of the source/drain region further comprises forming a contact opening through the dielectric material to expose a portion of the source/drain region and at least a portion of one non-planar transistor gate spacer.

11. The method of claim 10 , wherein forming the titanium-containing contact interface layer further comprises forming the titanium-containing contact interface layer to abut at least a portion of one non-planar transistor gate spacer.

12. The method of claim 9 , wherein forming a contact opening through the dielectric material to expose at least a portion of the source/drain region further comprises forming a contact opening through the dielectric material to expose a portion of the source/drain region and at least a portion of the capping structure.

13. The method of claim 12 , wherein the forming the titanium-containing contact interface layer further comprises forming the titanium-containing contact interface layer to abut at least a portion of the capping structure.

14. A microelectronic device, comprising:
a silicon-containing non-planar transistor fin;
a source/drain region in the silicon-containing non-planar fin;
a source/drain contact adjacent the source/drain region, wherein the source/drain contact comprises a conductive contact material and a titanium-containing contact interface layer disposed between conductive contact material and the source/drain region, wherein the titanium-containing contact interface layer comprises substantially pure titanium;
a titanium silicide interface disposed between the source/drain region and the titanium- containing contact interface layer; and
a non-planar transistor gate over the non-planar transistor fin, wherein the non-planar transistor gate comprises a gate electrode recessed between gate spacers and a capping structure disposed on the recessed gate electrode between the gate spacers, and wherein the titanium-containing contact interface layer abuts at least a portion of one non-planar transistor gate spacer and/or abuts at least a portion of the capping structure.

15. The microelectronic device of claim 14 , wherein the conductive contact material comprises tungsten.

16. The microelectronic device of claim 14 , wherein the titanium silicide interface resides substantially only between the source/drain region and the titanium-containing contact interface layer.

Assignees

• Intel Corp

Inventors

• Pradhan Sameer S
• Joshi Subhash M
• Chun Jin-Sung

Classifications

• H10D64/0112

  using conductive layers comprising silicides · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/414

  of metal-silicide materials · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title