Method for forming silicon-containing film and film forming apparatus
US-2024087883-A1 · Mar 14, 2024 · US
of metal-silicide materials
of metal-silicide materials · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H10P14/414 |
| Official title | {of metal-silicide materials} |
| Display label | of metal-silicide materials |
| Total patents | 507 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is growing.
| Year | Patents |
|---|---|
| 2015 | 87 |
| 2016 | 79 |
| 2017 | 61 |
| 2018 | 58 |
| 2019 | 50 |
| 2020 | 51 |
| 2021 | 26 |
| 2022 | 22 |
| 2023 | 12 |
| 2024 | 23 |
| 2025 | 33 |
| 2026 | 5 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method of forming contact structure of gate structure
US-2015380270-A1 · Dec 31, 2015 · US
Interconnect structure for semiconductor devices
US-9219036-B2 · Dec 22, 2015 · US
Semiconductor structures having low resistance paths throughout a wafer
US-2015364368-A1 · Dec 17, 2015 · US
Method of Producing a III-V Fin Structure
US-2015340503-A1 · Nov 26, 2015 · US
Semiconductor structures having low resistance paths throughout a wafer
US-2015332925-A1 · Nov 19, 2015 · US
Dual silicide integration with laser annealing
US-2015332936-A1 · Nov 19, 2015 · US
Semiconductor device and manufacturing method thereof
US-9190333-B2 · Nov 17, 2015 · US
Semiconductor device and method for fabricating the same
US-2015325668-A1 · Nov 12, 2015 · US
Methods of Fabricating Diodes with Multiple Junctions
US-2015325674-A1 · Nov 12, 2015 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium
US-2015303051-A1 · Oct 22, 2015 · US
Three dimensional NAND device with silicide containing floating gates and method of making thereof
US-9165940-B2 · Oct 20, 2015 · US
Integrated metal spacer and air gap interconnect
US-2015279726-A1 · Oct 1, 2015 · US
Method of forming contact structure of gate structure
US-9123563-B2 · Sep 1, 2015 · US
Integrated circuit heat dissipation using nanostructures
US-2015243578-A1 · Aug 27, 2015 · US
Contact Critical Dimension Control
US-2015228537-A1 · Aug 13, 2015 · US
Semiconductor device and method for manufacturing the same
US-2015228736-A1 · Aug 13, 2015 · US
Dual silicide integration with laser annealing
US-9093424-B2 · Jul 28, 2015 · US
Diodes with multiple junctions and fabrication methods therefor
US-9093567-B2 · Jul 28, 2015 · US
Semiconductor device structure and method of manufacturing the same
US-2015206887-A1 · Jul 23, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H10P14/414?
- CPC H10P14/414 is the Cooperative Patent Classification code for “of metal-silicide materials.”
- How many patents are filed under CPC H10P14/414 (of metal-silicide materials)?
- Our database includes 507 publications tagged with this CPC code.
- Is patent activity under CPC H10P14/414 growing?
- Publication counts under this code: 23 in 2024 vs 33 in 2025 (latest complete years).