Target for ultraviolet light generation, electron beam-excited ultraviolet light source, and production method for target for ultraviolet light generation

Patent metadata

Field	Value
Publication number	US-9852898-B2
Application number	US-201314437345-A
Country	US
Kind code	B2
Filing date	Sep 6, 2013
Priority date	Oct 23, 2012
Publication date	Dec 26, 2017
Grant date	Dec 26, 2017

Abstract

A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer, disposed on the substrate, for generating ultraviolet light in response to an electron beam. The light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator (e.g., Pr:LPS and Pr:LSO crystals).

First claim

The invention claimed is:

1. A target for ultraviolet light generation comprising:
a substrate adapted to transmit ultraviolet light therethrough; and
a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam;
wherein the light-emitting layer includes a powdery or granular oxide crystal containing Lu and Si doped with an activator, and
wherein the oxide crystal has a surface covered with a melted crystal layer resolidified after being melted by heat treatment.

2. A target for ultraviolet light generation according to claim 1 , wherein the melted crystal layer fuses the oxide crystals to each other and to the substrate.

3. A target for ultraviolet light generation according to claim 1 , wherein the oxide crystal includes at least one of Lu 2 Si 2 O 7 (LPS) and Lu 2 SiO 5 (LSO).

4. A target for ultraviolet light generation according to claim 3 , wherein the activator is Pr.

5. A target for ultraviolet light generation according to claim 1 , wherein the substrate is constituted by sapphire, silica, or rock crystal.

6. An electron-beam-excited ultraviolet light source comprising:
the target for ultraviolet light generation according to claim 1 ; and
an electron source providing the target with the electron beam.

7. A method for manufacturing a target for ultraviolet light generation, the method comprising depositing a powdery or granular oxide crystal containing Lu and Si doped with an activator on a substrate adapted to transmit ultraviolet light therethrough and heat-treating the oxide crystal, so as to melt and then resolidify a surface of the oxide crystal to form a melted crystal layer.

8. A method for manufacturing a target for ultraviolet light generation according to claim 7 , wherein the heat-treatment temperature is at least 1000° C. but not higher than 2000° C.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Honda Yoshinori
• Taketomi Hiroyuki
• Fukuyo Fumitsugu
• Kawai Koji
• Takaoka Hidetsugu
• Suzuki Takashi

Classifications

• H01J63/04

  Vessels provided with luminescent coatings; Selection of materials for the coatings · CPC title

• H01J63/06 Primary

  Lamps with luminescent screen excited by the ray or stream · CPC title

• C09K11/77742

  Silicates · CPC title

• C09K11/7774

  Aluminates · CPC title