Target for ultraviolet light generation, electron beam-excited ultraviolet light source, and production method for target for ultraviolet light generation

Patent metadata

Field	Value
Publication number	US-9240313-B2
Application number	US-201314437376-A
Country	US
Kind code	B2
Filing date	Sep 6, 2013
Priority date	Oct 23, 2012
Publication date	Jan 19, 2016
Grant date	Jan 19, 2016

Abstract

A target for ultraviolet light generation comprises a substrate adapted to transmit ultraviolet light therethrough and a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam. The light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator or a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator.

First claim

The invention claimed is:

1. A target for ultraviolet light generation comprising:
a substrate adapted to transmit ultraviolet light therethrough; and
a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam;
wherein the light-emitting layer includes a polycrystalline film constituted by an oxide polycrystal containing Lu and Si doped with an activator.

2. A target for ultraviolet light generation according to claim 1 , wherein the oxide polycrystal includes at least one of LPS and LSO.

3. A target for ultraviolet light generation according to claim 2 , wherein the activator is Pr.

4. A target for ultraviolet light generation according to claim 1 , wherein the polycrystalline film has a thickness of at least 0.1 μm but not more than 10 μm.

5. A target for ultraviolet light generation according to claim 1 , wherein the substrate is constituted by sapphire, silica, or rock crystal.

6. An electron-beam-excited ultraviolet light source comprising:
the target for ultraviolet light generation according to claim 1 ; and
an electron source providing the target with the electron beam.

7. A target for ultraviolet light generation comprising:
a substrate adapted to transmit ultraviolet light therethrough; and
a light-emitting layer disposed on the substrate and generating ultraviolet light in response to an electron beam;
wherein the light-emitting layer includes a polycrystalline film constituted by a rare-earth-containing aluminum garnet polycrystal doped with an activator, the polycrystalline film having an ultraviolet light emission peak wavelength of 300 nm or shorter.

8. A target for ultraviolet light generation according to claim 7 , wherein the rare-earth-containing aluminum garnet polycrystal is LuAG, while the activator is at least one of Sc, La, and Bi.

9. A target for ultraviolet light generation according to claim 7 , wherein the rare-earth-containing aluminum garnet polycrystal is YAG, while the activator is at least one of Sc and La.

10. A target for ultraviolet light generation according to claim 7 , wherein the polycrystalline film has a thickness of at least 0.1 μm but not more than 10 μm.

11. A target for ultraviolet light generation according to claim 7 , wherein the substrate is constituted by sapphire, silica, or rock crystal.

12. An electron-beam-excited ultraviolet light source comprising:
the target for ultraviolet light generation according to claim 7 ; and
an electron source providing the target with the electron beam.

13. A method for manufacturing a target for ultraviolet light generation, the method comprising:
a first step of vapor-depositing an activator and an oxide containing Lu and Si on a substrate adapted to transmit ultraviolet light therethrough, so as to form a film; and
a second step of turning the film into a polycrystal by heat treatment.

14. A method for manufacturing a target for ultraviolet light generation according to claim 13 , wherein the surroundings of the film are at an atmospheric pressure during the heat treatment in the second step.

15. A method for manufacturing a target for ultraviolet light generation according to claim 13 , wherein the film has a thickness of at least 0.1 μm but not more than 10 μm after the heat treatment in the second step.

16. A method for manufacturing a target for ultraviolet light generation, the method comprising:
a first step of vapor-depositing an activator having an ultraviolet light emission peak wavelength of 300 nm or shorter and a material for a rare-earth-containing aluminum garnet crystal, so as to form a film; and
a second step of turning the film into a polycrystal by heat treatment.

17. A method for manufacturing a target for ultraviolet light generation according to claim 16 , wherein the surroundings of the film are in a vacuum during the heat treatment in the second step.

18. A method for manufacturing a target for ultraviolet light generation according to claim 16 , wherein the film has a thickness of at least 0.1 μm but not more than 10 μm after the heat treatment in the second step.

Assignees

• Hamamatsu Photonics Kk

Inventors

• Honda Yoshinori
• Taketomi Hiroyuki
• Fukuyo Fumitsugu
• Kawai Koji
• Takaoka Hidetsugu
• Ichikawa Norio
• Suzuki Takashi

Classifications

• H01J63/06 Primary

  Lamps with luminescent screen excited by the ray or stream · CPC title

• C23C16/40

  Oxides · CPC title

• H01J63/04

  Vessels provided with luminescent coatings; Selection of materials for the coatings · CPC title

• C09K11/77742

  Silicates · CPC title

• C09K11/7774

  Aluminates · CPC title