Ultraviolet light generating target, electron-beam-excited ultraviolet light source, and method for producing ultraviolet light generating target

Patent metadata

Field	Value
Publication number	US-9318312-B2
Application number	US-201214113383-A
Country	US
Kind code	B2
Filing date	Apr 24, 2012
Priority date	Apr 25, 2011
Publication date	Apr 19, 2016
Grant date	Apr 19, 2016

Abstract

An ultraviolet light generating target 20 includes a substrate 21 made of sapphire, quartz, or rock crystal; and a light-emitting layer 22 that is provided on the substrate 21 and that generates ultraviolet light upon receiving an electron beam. The light-emitting layer 22 includes powdered or granular Pr:LuAG crystals. By using such a light-emitting layer 22 as the target, the ultraviolet light generating efficiency can be increased more remarkably than when a Pr:LuAG single crystal film is used.

First claim

The invention claimed is:

1. An electron-beam-excited ultraviolet light source, comprising:
an ultraviolet light generating target including a substrate made of sapphire, quartz, or rock crystal, and a light-emitting layer provided on the substrate and generating ultraviolet light upon receiving an electron beam;
an electron source providing an electron beam to the ultraviolet light generating target; and
a vacuum-pumped container in which the ultraviolet light generating target and the electron source are arranged,
wherein
the light-emitting layer includes powdered or granular Pr:LuAG crystals,
the electron beam is incident on the light-emitting layer through a conductive film, and
the ultraviolet light generated in the light-emitting layer output from the substrate.

2. The electron-beam-excited ultraviolet light source according to claim 1 , wherein a thickness of the light-emitting layer is 0.5 μm or more and 30 μm or less.

3. The electron-beam-excited ultraviolet light source according to claim 1 , wherein a median diameter of the Pr:LuAG crystals in the light-emitting layer is 0.5 μm or more and 30 μm or less.

4. The electron-beam-excited ultraviolet light source according to claim 1 , wherein a surface of the Pr:LuAG crystals is covered with a crystalline melting layer that is melted by heat treatment and then solidified again.

5. The electron-beam-excited ultraviolet light source according to claim 4 , wherein, by the crystalline melting layer, the Pr:LuAG crystals fuse with each other, and the Pr:LuAG crystals and the substrate also fuse with each other.

6. A method for producing an electron-beam-excited ultraviolet light source, wherein by depositing powdered or granular Pr:LuAG crystals on a substrate made of sapphire, quartz, or rock crystal, and then performing heat treatment for the Pr:LuAG crystals, a surface of the Pr:LuAG crystals is melted and then solidified again to form a crystalline melting layer, and
wherein a light-emitting layer including the powdered or granular Pr:LuAG crystals is provided on the substrate, and ultraviolet light is generated upon receiving an electron beam.

7. The method for producing the electron-beam-excited ultraviolet light source according to claim 6 , wherein the temperature of the heat treatment is 1400° C. or more and 2000° C. or less.

8. An ultraviolet light generating target, comprising:
a substrate made of sapphire, quartz, or rock crystal; and
a light-emitting layer provided on the substrate and generating ultraviolet light upon receiving an electron beam,
wherein
the light-emitting layer includes powdered or granular Pr:LuAG crystals, and
a surface of the Pr:LuAG crystals is covered with a crystalline melting layer that is melted by heat treatment and then solidified again.

9. The ultraviolet light generating target according to claim 8 , wherein, by the crystalline melting layer, the Pr:LuAG crystals fuse with each other, and the Pr:LuAG crystals and the substrate also fuse with each other.

10. The ultraviolet light generating target according to claim 8 , wherein a thickness of the light-emitting layer is 0.5 μm or more and 30 μm or less.

11. The ultraviolet light generating target according to claim 8 , wherein a median diameter of the Pr:LuAG crystals in the light-emitting layer is 0.5 μm or more and 30 μm or less.

Assignees

• Honda Yoshinori
• Fukuyo Fumitsugu
• KASAMATSU Yuji
• Suzuki Takashi
• HATTORI Takeaki
• Kawai Koji
• Chu Shucheng
• Taketomi Hiroyuki
• Hamamatsu Photonics Kk

Inventors

• Honda Yoshinori
• Fukuyo Fumitsugu
• KASAMATSU Yuji
• Suzuki Takashi
• HATTORI Takeaki
• Kawai Koji
• Chu Shucheng
• Taketomi Hiroyuki

Classifications

• H01J63/06 Primary

  Lamps with luminescent screen excited by the ray or stream · CPC title

• G01J1/429

  applied to measurement of ultraviolet light (using counting tubes G01T) · CPC title

• H01J29/20

  characterised by the luminescent material · CPC title

• H01J63/04

  Vessels provided with luminescent coatings; Selection of materials for the coatings · CPC title

• G01N21/64

  Fluorescence; Phosphorescence · CPC title