Oxide semiconductor layer and production method therefor, oxide semiconductor precursor, oxide semiconductor layer, semiconductor element, and electronic device

Patent metadata

Field	Value
Publication number	US-9842916-B2
Application number	US-201615377068-A
Country	US
Kind code	B2
Filing date	Dec 13, 2016
Priority date	Aug 9, 2013
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

The invention provides an oxide semiconductor layer that has less cracks and is excellent in electrical property and stability, as well as a semiconductor element and an electronic device each including the oxide semiconductor layer. The invention provides an exemplary method of producing an oxide semiconductor layer, and the method includes the precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of aliphatic polycarbonate, and the annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature (denoted by X) that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA).

First claim

The invention claimed is:

1. A method of producing an oxide semiconductor layer, the method comprising:
a precursor layer forming step of forming, on or above a substrate, a layered oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of an aliphatic polycarbonate (possibly including inevitable impurities); and
an annealing step of heating the precursor layer at a first temperature achieving decomposition of 90 wt % or more of the binder, and then annealing the precursor layer at a temperature equal to or higher than a second temperature that is higher than the first temperature, achieves bonding between the metal and oxygen, and has an exothermic peak value in differential thermal analysis (DTA) for the compound.

2. The method of producing the oxide semiconductor layer according to claim 1 , wherein
the second temperature is higher than the first temperature by at least 10° C.

3. The method of producing the oxide semiconductor layer according to claim 1 , wherein
the second temperature is higher than the first temperature by at least 50° C.

4. The method of producing the oxide semiconductor layer according to claim 1 , the method further comprising:
an irradiation step of irradiating with ultraviolet rays after the annealing step.

5. The method of producing the oxide semiconductor layer according claim 1 , wherein
the aliphatic polycarbonate is an aliphatic polycarbonate obtained by polymerizing an epoxide and carbon dioxide.

6. The method of producing the oxide semiconductor layer according to claim 1 , wherein
the aliphatic polycarbonate is at least one selected from the group consisting of a polyethylene carbonate and a polypropylene carbonate.

7. An oxide semiconductor precursor comprising a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of an aliphatic polycarbonate (possibly including inevitable impurities), wherein
90 wt % or more of the binder is decomposed at a first temperature lower than a second temperature that achieves bonding between the metal and oxygen and has an exothermic peak value in differential thermal analysis (DTA) for the compound.

8. The oxide semiconductor precursor according to claim 7 , wherein the second temperature is higher than the first temperature by at least 10° C.

9. The oxide semiconductor precursor according to claim 7 , wherein the second temperature is higher than the first temperature by at least 50° C.

10. The oxide semiconductor precursor according to claim 7 , wherein
the aliphatic polycarbonate is an aliphatic polycarbonate obtained by polymerizing an epoxide and carbon dioxide.

11. The oxide semiconductor precursor according to claim 7 , wherein the aliphatic polycarbonate is at least one selected from the group consisting of a polyethylene carbonate and a polypropylene carbonate.

12. An oxide semiconductor layer formed by annealing a layer of an oxide semiconductor precursor including a compound of metal to be oxidized into an oxide semiconductor dispersed in a solution including a binder made of an aliphatic polycarbonate (possibly including inevitable impurities) at a temperature equal to or higher than a second temperature that achieves bonding between the metal and oxygen and has an exothermic peak value in differential thermal analysis (DTA) for the compound, wherein 90 wt % or more of the binder is decomposed at a first temperature lower than the second temperature.

13. The oxide semiconductor layer according to claim 12 , wherein the second temperature is higher than the first temperature by at least 10° C.

14. The oxide semiconductor layer according to claim 12 , wherein the second temperature is higher than the first temperature by at least 50° C.

15. A semiconductor element comprising:
the oxide semiconductor layer according to claim 12 .

16. An electronic device comprising:
the semiconductor element according to claim 15 .

Assignees

• Japan Advanced Institute Of Science And Tech
• Sumitomo Seika Chemicals

Inventors

• Inoue Satoshi
• Shimoda Tatsuya
• Kawakita Tomoki
• Fujimoto Nobutaka
• Nishioka Kiyoshi

Classifications

• H10P14/3234

  being oxide semiconducting materials (Group IIB-VIA semiconductors H10P14/3224) · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426

  Oxides · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/203

  using transformation of metal, e.g. oxidation or nitridation · CPC title