Method for producing indium oxide-containing layers

Patent metadata

Field	Value
Publication number	US-9293326-B2
Application number	US-201314407681-A
Country	US
Kind code	B2
Filing date	Jun 4, 2013
Priority date	Jun 13, 2012
Publication date	Mar 22, 2016
Grant date	Mar 22, 2016

Abstract

The present invention relates to a fluid phase method for producing indium oxide-containing layers, in which a composition comprising at least one indium oxo-alkoxide of the generic formula M x O y (OR) z [O(R′O) e H] a X b Y c [R″OH] d with x=3-25, y=1-10, z=3-50, a=0-25, b=0-20, c=1-20, d=0-25, e=0, 1, M=In, R, R′, R″=organic remainder, X═F, Cl, Br, I, and Y═—NO 3 , —NO 2 , where b+c is =1-20 and at least one solvent is applied to a substrate, optionally dried, and converted into an indium oxide-containing layer, to the indium oxo-alkoxides of the indicated generic formula, to coating compositions comprising said indium oxo-alkoxides, to layers that can be produced by means of the method according to the invention, and to the use of said layers.

First claim

The invention claimed is:

1. A liquid phase process for producing an indium oxide-containing layer, comprising:
applying to a substrate, a composition comprising
i) an indium oxo alkoxide of the generic formula
M x O y (OR) z [O(R′O) e H] a X b Y c [R″OH] d

 where
x=3-25,
y=1-10,
z=3-50,
a=0-25,
b=0-20,
c=1-20,
d=0-25,
e=0, 1,
M=In,
R, R′, R″ are each an organic radical,
X=F, Cl, Br, I,
Y=—NO 3 , —NO 2 ,

 with the proviso that b+c=1-20, and
ii) solvent; and
converting the coated substrate to an indium oxide-containing layer.

2. The process according to claim 1 ,
wherein:
the indium oxo alkoxide is of the formula M x O y (OR) z Y c ,
where x=3-20, y=1-8, z=3-25, c=1-20, OR is a C1-C15-alkoxy, -oxyalkylalkoxy, -aryloxy or -oxyarylalkoxy group and Y is —NO 3 .

3. The process according to claim 1 ,
wherein
the indium oxo alkoxide is the sole metal oxide precursor in the process.

4. The process according to claim 1 ,
wherein
the indium oxo alkoxide is present in a proportion of 0.1 to 15% by weight, based on the total mass of the composition.

5. The process according to claim 1 ,
wherein
the solvent is an aprotic or weakly protic solvent.

6. The process according to claim 5 ,
wherein
the solvent is selected from the group consisting of methanol, ethanol, isopropanol, tetrahydrofurfuryl alcohol, 1-methoxy-2-propanol, tert-butanol and toluene.

7. The process according to claim 1 ,
wherein
the composition has a viscosity of 1 mPa·s to 10 Pa·s.

8. The process according to claim 1 ,
wherein
the substrate comprises glass, silicon, silicon dioxide, a metal oxide, a transition metal oxide, a metal or a polymeric material.

9. The process according to claim 1 ,
wherein
the composition is an aqueous composition that is applied to the substrate by a process selected from the group consisting of a coating process, a printing process, a spraying process, a rotary coating process, a dipping process, meniscus coating, slit coating, slot-die coating and curtain coating.

10. The process according to claim 1 ,
wherein
the converting is effected thermally at a temperature greater than 150° C.

11. The process according to claim 10 ,
wherein
UV, IR or VIS radiation is injected before, during or after the converting is effected thermally.

12. An indium oxo alkoxide of the generic formula M x O y (OR) z [O(R′O) e H] a X b Y c [R″OH] d
where
x=3-25,
y=1-10,
z=3-50,
a=0-25,
b=0-20,
c=1-20,
d=0-25,
e=0, 1,
M=In,
R, R′, R″ are each an organic radical,
X=F, Cl, Br, I,
Y=—NO 3 , —NO 2 ,
with the proviso that b+c=1-20.

13. A coating composition comprising indium oxo alkoxide according to claim 12 and one solvent.

14. An indium oxide-containing layer produced by the process according to claim 1 .

15. An electronic component comprising the indium oxide-containing layer according to claim 14 .

16. The electronic component according to claim 15 , wherein the electronic component is selected from the group consisting of a transistor, a diode, a sensor and a solar cell.

17. The process according to claim 1 , further comprising drying the coated substrate before converting the coated substrate to an indium oxide-containing layer.

18. The process according to claim 1 ,
wherein:
the indium oxo alkoxide is of the formula M x O y (OR) z Y c ,
where x=3-15, y=1-5, z=10-20, c=4-10, R is —CH 3 , —CH 2 CH 3 , —CH 2 CH 2 OCH 3 , —CH(CH 3 ) 2 , —CH(CH 3 )CH 2 OCH 3 , —C(CH 3 ) 3 or

and Y=NO 3 .

Assignees

• Steiger Juergen
• Fruehling Dennis
• Merkulov Alexey
• Hoppe Arne
• Evonik Degussa Gmbh

Inventors

• Steiger Juergen
• Fruehling Dennis
• Merkulov Alexey
• Hoppe Arne

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/3434 Primary

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• C23C18/143

  Radiation by light, e.g. photolysis or pyrolysis · CPC title

• C23C18/14

  Decomposition by irradiation, e.g. photolysis, particle radiation {or by mixed irradiation sources} · CPC title