Rapid Thermal Processing System With Cooling System
US-2024379390-A1 · Nov 14, 2024 · US
US9842753B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9842753-B2 |
| Application number | US-201414257942-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 21, 2014 |
| Priority date | Apr 26, 2013 |
| Publication date | Dec 12, 2017 |
| Grant date | Dec 12, 2017 |
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The embodiments described herein generally relate to a lamphead assembly with an absorbing upper surface in a thermal processing chamber. In one embodiment, a processing chamber includes an upper structure, a lower structure, a base ring connecting the upper structure to the lower structure, a substrate support disposed between the upper structure and the lower structure, a lower structure disposed below the substrate support, a lamphead positioned proximate to the lower structure with one or more fixed lamphead positions formed therein, the lamphead comprising a first surface proximate the lower structure and a second surface opposite the first surface, wherein the first surface comprises an absorptive coating and one or more lamp assemblies each comprising a radiation generating source and positioned in connection with the one or more fixed lamphead positions.
Opening claim text (preview).
The invention claimed is: 1. A processing chamber, comprising: a first structure; a second structure; a base ring connecting the first structure to the second structure; a substrate support disposed between the first structure and the second structure; a radiation source structure positioned adjacent to the second structure with one or more radiation source positions formed in the radiation source structure, the radiation source structure comprising a first surface adjacent the second structure, wherein the first surface comprises an absorptive coating, wherein the second structure is disposed between the radiation source structure and the substrate support; and one or more radiation sources located at the one or more radiation source positions. 2. The processing chamber of claim 1 , wherein the absorptive coating is a carbon black coating. 3. The processing chamber of claim 1 , wherein each of the radiation sources is a bulb containing an incandescent filament, a bulb containing radiating gas, or a solid state radiation source. 4. The processing chamber of claim 1 , wherein the radiation source structure comprises copper or aluminum. 5. The processing chamber of claim 1 , wherein the radiation source structure is water cooled. 6. The processing chamber of claim 1 , wherein the radiation source structure has an adhesion-enhancing formation. 7. The processing chamber of claim 6 , wherein the adhesion-enhancing formation is a primer. 8. The processing chamber of claim 1 , further comprising: a reflector with a reflective surface disposed above and facing the first structure, wherein the reflector has an absorptive coating disposed over at least a portion of the reflective surface. 9. The processing chamber of claim 1 , wherein the first structure, the second structure or combinations thereof are dome shaped. 10. A processing chamber for heating a substrate, comprising: a substrate support disposed within the process chamber for supporting a substrate, the substrate support having a first support surface for contacting a substrate and a second support surface opposite the first support surface; a first structure disposed proximate the second support surface; a radiation source structure positioned adjacent to the first structure with one or more radiation source positions formed therein, the radiation source structure comprising a first surface adjacent the first structure, the first surface comprising an absorptive coating, wherein the first structure is disposed between the radiation source structure and the substrate support; a lamp assembly comprising a radiation generating source; a first structure opposing the first structure; and a base ring disposed between the first structure and the second structure, the second structure, the base ring and the first structure defining a processing region of the process chamber. 11. The processing chamber of claim 10 , wherein the first structure, the second structure or combinations thereof are dome shaped. 12. The processing chamber of claim 10 , wherein the absorptive coating is a carbon black coating. 13. The processing chamber of claim 10 , wherein each of the radiation generating sources is a bulb containing an incandescent filament, a bulb containing radiating gas, or a solid state radiation source. 14. The processing chamber of claim 10 , wherein the radiation source structure comprises copper or aluminum. 15. The processing chamber of claim 10 , wherein the radiation source structure is water cooled. 16. The processing chamber of claim 10 , wherein the radiation source structure has an adhesion-enhancing formation. 17. The processing chamber of claim 16 , wherein the adhesion-enhancing formation is a primer. 18. The processing chamber of claim 10 , further comprising a reflector with a reflective surface disposed proximate to and facing the second structure, wherein the reflector has an absorptive coating disposed over at least a portion of the reflective surface. 19. A processing chamber for heating a substrate, comprising: a substrate support disposed within a processing region of the process chamber for supporting a substrate, the substrate support having a first support surface for contacting a substrate and a second support surface opposite the first support surface; a first structure disposed proximate the second support surface; a radiation source structure positioned outside of the processing region and adjacent to the first structure with one or more radiation source positions formed therein, the radiation source structure comprising a first surface adjacent the first structure, comprising: an adhesion enhancing formation on or in the first surface; and a carbon black absorptive coating formed on the adhesion enhancing formation; a lamp assembly comprising a radiation generating source; a second structure opposing the first structure; and a base ring disposed between the first structure and the second structure, the second structure, the base ring and the first structure defining the processing region of the process chamber. 20. The processing chamber of claim 19 , wherein each of the radiation generating sources is a bulb containing an incandescent filament, a bulb containing radiating gas, or a solid state radiation source.
mainly by radiation · CPC title
by radiant heating of the substrate · CPC title
specially adapted for treating semiconductor wafers · CPC title
Supports specially adapted for semi-conductors · CPC title
for semiconductor manufacture · CPC title
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