Methods for manufacturing well structures for low-noise chemical sensors

Patent metadata

Field	Value
Publication number	US-9841398-B2
Application number	US-201313736566-A
Country	US
Kind code	B2
Filing date	Jan 8, 2013
Priority date	Jan 8, 2013
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

In one implementation, a method for manufacturing a chemical detection device is described. The method includes forming a chemical sensor having a sensing surface. A dielectric material is deposited on the sensing surface. A first etch process is performed to partially etch the dielectric material to define an opening over the sensing surface and leave remaining dielectric material on the sensing surface. An etch protect material is formed on a sidewall of the opening. A second etch process is then performed to selectively etch the remaining dielectric material using the etch protect material as an etch mask, thereby exposing the sensing surface.

First claim

What is claimed is:

1. A chemical detection device, comprising:
a plurality of chemical sensors each having respective sensing surfaces;
a dielectric material having openings extending to the sensing surfaces, the openings having sidewalls, the dielectric material having a top surface extending between adjacent openings; and
a plurality of sidewall spacers on the sidewalls of the openings and not on the top surface of the dielectric material, the sidewall spacers having a bottom most surface spaced away from the sensing surfaces such that the sidewall spacer does not contact the surfaces, the sidewall spacers each having an inside surface defining a reaction region for receiving at least one reactant.

2. The chemical detection device of claim 1 , wherein the dielectric material within a lower portion of the openings comprises material different than that of the plurality of sidewall spacers.

3. The chemical detection device of claim 1 , wherein the chemical sensors are chemically-sensitive field effect transistors, and the sensing surfaces are coupled to respective channels of the chemically-sensitive field effect transistors.

4. The chemical detection device of claim 3 , wherein the sensing surfaces are on an upper surface of respective floating gates of the chemically-sensitive field effect transistors.

5. The chemical detection device of claim 1 , wherein the chemical sensors generate respective sensor signals in response to a chemical reaction occurring within a given reaction region.

6. The chemical detection device of claim 5 , wherein the chemical reaction is a sequencing reaction.

Assignees

• Life Technologies Corp

Inventors

• Bustillo James
• Li Shifeng

Classifications

• G01N27/4145

  specially adapted for biomolecules, e.g. gate electrode with immobilised receptors · CPC title

• G01N27/414 Primary

  Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS · CPC title

• G01N27/4148 Primary

  Integrated circuits therefor, e.g. fabricated by CMOS processing · CPC title