Self-aligned well structures for low-noise chemical sensors

Patent metadata

Field	Value
Publication number	US-8962366-B2
Application number	US-201313751575-A
Country	US
Kind code	B2
Filing date	Jan 28, 2013
Priority date	Jan 28, 2013
Publication date	Feb 24, 2015
Grant date	Feb 24, 2015

Abstract

In one implementation, a chemical detection device is described. The device includes a chemically-sensitive field effect transistor including a floating gate conductor coupled to a gate dielectric and having an upper surface, and a sensing material on the upper surface. The device also includes a fill material defining a reaction region extending above the sensing material, the reaction region overlying and substantially aligned with the floating gate conductor.

First claim

What is claimed is:

1. A method for forming a chemical detection device, the method comprising:
forming a gate dielectric on a semiconductor substrate;
forming a floating gate structure on the gate dielectric, including:
forming a conductive material overlying the gate dielectric;
forming a sensing material on the conductive material;
forming a sacrificial material overlying the sensing material;
patterning the conductive material, the sensing material and the sacrificial…

Assignees

• Life Technologies Corp

Inventors

• Putnam Jonathan
• Li Shifeng

Classifications

• G01N27/4145 Primary

  Physics · mapped topic

• G01N27/414 Primary

  Physics · mapped topic

• G01N27/4148

  Physics · mapped topic