Tin plating solution, tin plating equipment, and method for fabricating semiconductor device using the tin plating solution

Patent metadata

Field	Value
Publication number	US-9840785-B2
Application number	US-201414578662-A
Country	US
Kind code	B2
Filing date	Dec 22, 2014
Priority date	Apr 28, 2014
Publication date	Dec 12, 2017
Grant date	Dec 12, 2017

Abstract

A tin plating solution and a method for fabricating a semiconductor device are provided. The tin plating solution comprises tin ions supplied from a soluble tin electrode, an aliphatic sulfonic acid having a carbon number of 1 to 10, an anti-oxidant, a wetting agent, and a grain refiner that is an aromatic carbonyl compound.

First claim

What is claimed is:

1. A tin plating solution comprising:
tin ions;
an aliphatic sulfonic acid having a carbon number in a range of 1 to 10;
an anti-oxidant;
a wetting agent; and
a grain refiner that is an aromatic carbonyl compound,
wherein the wetting agent is represented by Formula 2, 3, or 4:

wherein in Formula 2 and Formula 3, n is in a range of 1 to 3, X includes at least one of O, S, SO, SO 2 , CH 2 , CH 2 CH 2 , CH 2 CH 2 CH 2 and CHCH 3 , and Y is selected from the group consisting of a hydrogen group, hydroxyl group, sulfhydryl group, alkyl group having a carbon number in a range of 1 to 24, aliphatic alkoxyl group, alkyl thioalkoxyl group having a carbon number in a range of 1 to 10, fluorine group, chloro group, and bromo group, and
wherein in Formula 4, n is in a range of 1 to 6.

2. The tin plating solution of claim 1 , wherein the grain refiner is represented by Formula 1:

wherein Ar is at least one aromatic ring and R is a hydrogen group or an alkyl group.

3. The tin plating solution of claim 2 , wherein R is selected from the group consisting of a hydrogen group (—H), paraffin group (—C n H 2n+1 ), and cycloparaffin group (—C m H 2m−1 ), and
n is equal to or greater than 1, and m is equal to or greater than 2.

4. The tin plating solution of claim 1 , wherein the aliphatic sulfonic acid is methane sulfonic acid.

5. The tin plating solution of claim 1 , wherein the anti-oxidant comprises one of hydroquinone and orange acid.

6. The tin plating solution of claim 1 , wherein a concentration of the aliphatic sulfonic acid is in a range of 225 to 350 ml/L.

7. The tin plating solution of claim 1 , wherein a concentration of the tin ions is in a range of 50 to 100 g/L.

8. The tin plating solution of claim 1 , wherein the tin ions are supplied from a soluble tin electrode.

9. A method for fabricating a semiconductor device comprising:
forming a contact pad on a substrate; and
forming a pure tin bump on the contact pad using a tin plating solution,
wherein the tin plating solution includes an aliphatic sulfonic acid having a carbon number in a range of 1 to 10, an anti-oxidant, a wetting agent that is a polycyclic aromatic compound, and a grain refiner that is an aromatic carbonyl compound,
wherein the polycyclic aromatic compound is represented by Formula 2, 3, or 4:

wherein in Formula 2 and Formula 3, n is in a range of 1 to 3, X includes at least one of O, S, SO, SO 2 , CH 2 , CH 2 CH 2 , CH 2 CH 2 CH 2 and CHCH 3 , and Y is selected from the group consisting of a hydrogen group, hydroxyl group, sulfhydryl group, alkyl group having a carbon number in a range of 1 to 24, aliphatic alkoxyl group, alkyl thioalkoxyl group having a carbon number in a range of 1 to 10, fluorine group, chloro group, and bromo group, and
wherein in Formula 4, n is in a range of 1 to 6.

10. The method of claim 9 , wherein the grain refiner is represented by Formula 1:

wherein Ar is at least one aromatic ring, and R is selected from the group consisting of a hydrogen group (—H), paraffin group (—C n H 2n+1 ), and cycloparaffin group (—C m H 2m−1 ), and
n is equal to or greater than 1, and m is equal to or greater than 2.

11. The method of claim 9 , wherein the polycyclic aromatic compound further includes an alkyl group which has a carbon number in a range of 10 to 24 and is combined with position 3, 4, or 5 of Formula 2 or Formula 3.

12. The method of claim 9 , wherein forming the pure tin bump on the contact pad using the tin plating solution comprises:
forming a photosensitive layer pattern that includes an opening formed on the contact pad;
forming a pure tin layer that fills a portion of the opening using the tin plating solution; and
performing heat treatment of the pure tin layer through a reflow process.

13. The method of claim 12 , further comprising forming a conductive layer that fills a portion of the opening on the pure tin layer after forming the pure tin layer.

14. The method of claim 12 , further comprising forming a conductive layer that fills a portion of the opening before forming the pure tin layer.

15. The method of claim 9 , wherein the grain refiner is represented by Formula 1:

wherein Ar is at least one aromatic ring and R is a hydrogen group or an alkyl group.

16. The method of claim 15 , wherein R is selected from the group consisting of a hydrogen group (—H), paraffin group (—C n H 2n+1 ), and cycloparaffin group (—C m H 2m−1 ), and
n is equal to or greater than 1, and m is equal to or greater than 2.

17. The method of claim 9 , wherein the aliphatic sulfonic acid is methane sulfonic acid.

18. The method of claim 9 , wherein the anti-oxidant comprises one of hydroquinone and orange acid.

19. The method of claim 9 , wherein a concentration of the aliphatic sulfonic acid is in a range of 225 to 350 ml/L.

20. The method of claim 9 , wherein the tin plating solution further comprises tin ions at a concentration in a range of 50 to 100 g/L.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Myung-Beom
• Lee Jin-Hee
• Choi Baik-Soon
• Choi Jung-Sik

Classifications

• H10W74/147

  the encapsulations being multilayered · CPC title

• H10W72/9223

  with redistribution layers [RDL] · CPC title

• H10W72/01971

  Cleaning, e.g. oxide removal · CPC title

• H10W72/01953

  by etching · CPC title

• H10W72/01938

  in gaseous form, e.g. by CVD or PVD · CPC title