Densification of silicon carbide film using remote plasma treatment

Patent metadata

Field	Value
Publication number	US-9837270-B1
Application number	US-201615382137-A
Country	US
Kind code	B1
Filing date	Dec 16, 2016
Priority date	Dec 16, 2016
Publication date	Dec 5, 2017
Grant date	Dec 5, 2017

Abstract

Provided are methods and apparatuses for densifying a silicon carbide film using remote plasma treatment. Operations of remote plasma deposition and remote plasma treatment of the silicon carbide film alternatingly occur to control film density. A first thickness of silicon carbide film is deposited followed by a remote plasma treatment, and then a second thickness of silicon carbide film is deposited followed by another remote plasma treatment. The remote plasma treatment can flow radicals of source gas in a substantially low energy state, such as radicals of hydrogen in a ground state, towards silicon carbide film deposited on a substrate. The radicals of source gas in the substantially low energy state promote cross-linking and film densification in the silicon carbide film.

First claim

What is claimed is:

1. A method of densifying a silicon carbide film, the method comprising:
providing a substrate in a reaction chamber;
depositing a first thickness of a silicon carbide material on the substrate in a first step of a process of depositing a silicon carbide film;
exposing the first thickness of the silicon carbide material to remote hydrogen plasma treatment, wherein the first thickness of the silicon carbide material is densified during the process of depositing the silicon carbide film;
depositing a second thickness of a silicon carbide material over the first thickness of the silicon carbide material in a second step of the process of depositing the silicon carbide film; and
exposing the second thickness of the silicon carbide material to remote hydrogen plasma treatment, wherein the second thickness of the silicon carbide material is densified in the process of depositing the silicon carbide film, wherein each of the first thickness and the second thickness is between about 5 Å and about 30 Å.

2. The method of claim 1 , wherein depositing the first thickness of the silicon carbide material includes:
(a) flowing one or more silicon-containing precursors into the reaction chamber; and
(b) flowing one or more hydrogen radicals generated from a remote plasma source to react with the one or more silicon-containing precursors for a first time period, wherein depositing the second thickness of the silicon carbide material includes repeating operations (a) and (b) for a second time period.

3. The method of claim 2 , wherein each of the one or more silicon-containing precursors have (i) one or more silicon-hydrogen bonds and/or silicon-silicon bonds, and (ii) one or more silicon-carbon bonds, silicon-nitrogen bonds, and/or silicon-oxygen bonds.

4. The method of claim 3 , wherein each of the one or more silicon-containing precursors is selected from a group consisting of: a cyclic siloxane, a linear siloxane, an alkoxy silane, an alkyl silane, and a silazane.

5. The method of claim 2 , wherein at least 90% of the hydrogen radicals are hydrogen radicals in a ground state.

6. The method of claim 2 , wherein the first time period is different than the second time period.

7. The method of claim 2 , wherein the first time period is identical to the second time period.

8. The method of claim 1 , wherein exposing the first thickness of the silicon carbide material to remote hydrogen plasma treatment includes:
(c) flowing a source gas of hydrogen into a remote plasma source;
(d) flowing an inert gas with the source gas of hydrogen;
(e) generating, from the source gas of hydrogen, radicals of hydrogen in the remote plasma source; and
(f) flowing the radicals of hydrogen to the first thickness of the silicon carbide material, wherein exposing the second thickness of the silicon carbide material to remote hydrogen plasma treatment includes repeating operations (c) through (f) on the second thickness of the silicon carbide material.

9. The method of claim 8 , wherein the inert gas is helium, the source gas of hydrogen in the helium having a concentration of 1-10% hydrogen.

10. The method of claim 8 , wherein at least 90% of the hydrogen radicals are hydrogen radicals in a ground state.

11. The method of claim 8 , wherein exposing the first thickness of the silicon carbide material to remote hydrogen plasma treatment further includes:
(g) flowing a co-reactant gas with the source gas, wherein the co-reactant gas includes oxygen (O 2 ), nitrogen (N 2 ), carbon dioxide (CO 2 ), carbon monoxide (CO), water (H 2 O), methanol (CH 3 OH), ozone (O 3 ), nitrous oxide (N 2 O), ammonia (NH 3 ), diazene (N 2 H 2 ), methane (CH 4 ), ethane (C 2 H 6 ), acetylene (C 2 H 2 ), ethylene (C 2 H 4 ), diborane (B 2 H 6 ), or combinations thereof, wherein exposing the second thickness of the silicon carbide material to remote hydrogen plasma treatment further includes repeating operation (g) to the second thickness of the silicon carbide material.

12. The method of claim 11 , wherein the co-reactant gas includes O 2 or N 2 .

13. The method of claim 1 , wherein a pressure in the reaction chamber is between about 0.2 Torr and about 5 Torr.

14. The method of claim 1 , wherein depositing the first thickness of the silicon carbide material, exposing the first thickness of the silicon carbide material to remote hydrogen plasma treatment, depositing the second thickness of the silicon carbide material, and exposing the second thickness of the silicon carbide material to remote hydrogen plasma treatment occur without introducing a vacuum break.

15. The method of claim 1 , wherein the substrate has a plurality of features, each of the features having a depth to width aspect ratio of greater than 5:1.

16. The method of claim 1 , wherein the silicon carbide film, prior to exposing the first and second thickness of the silicon carbide material to remote hydrogen plasma treatment, includes (1) Si—O and/or Si—C bonds, and (2) terminal CH 3 bonds, Si—OH bonds, and/or Si—H bonds.

17. The method of claim 16 , wherein the remote hydrogen plasma treatment is configured to increase a number of Si—O and/or Si—C bonds, and decrease a number of the terminal CH 3 bonds, Si—OH bonds, and/or Si—H bonds in the silicon carbide film.

18. The method of claim 1 , wherein the silicon carbide film is a doped silicon carbide film, the doped silicon carbide film including silicon oxycarbide (SiCO), silicon nitricarbide (SiCN), or silicon oxynitricarbide (SiONC) on the substrate.

19. The method of claim 1 , wherein exposing the first thickness of the silicon carbide material to remote hydrogen plasma treatment occurs for a duration between about 5 seconds and about 50 seconds, and exposing the second thickness of the silicon carbide material to remote hydrogen plasma treatment occurs for a duration between about 5 seconds and about 50 seconds.

Assignees

• Lam Res Corp

Inventors

• Varadarajan Bhadri N
• Gong Bo
• Yuan Guangbi
• Gui Zhe
• Lai Fengyuan

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6905

  being a silicon carbide or silicon carbonitride and not containing oxygen, e.g. SiC or SiC:H · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title