Semiconductor device package with warpage control structure

Patent metadata

Field	Value
Publication number	US-9831190-B2
Application number	US-201414151217-A
Country	US
Kind code	B2
Filing date	Jan 9, 2014
Priority date	Jan 9, 2014
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

Between an adhesive surface of a heat spreader lid and a top surface of a semiconductor package, in addition to a spreader adhesive layer, several warpage control adhesive layers are also provided. The warpage control adhesive layers are disposed on corner areas of the adhesive surface of the heat spreader lid to reduce high temperature warpage of the semiconductor device package.

First claim

What is claimed is:

1. A warpage control structure of a semiconductor device package with a heat spreader lid, the warpage control structure comprising:
a plurality of warpage control adhesive layers disposed between a top surface of a molding layer and an adhesive surface of the heat spreader lid as well as on plural corner areas of the adhesive surface of the heat spreader lid, wherein the top surface of the molding layer and the adhesive surface of the heat spreader lid are substantial planar, and a spacing in a direction parallel with the top surface of the molding layer is present between at least one of the warpage control adhesive layers and a die surrounded by the molding layer; and
a spreader adhesive layer disposed on a central area of the adhesive surface of the heat spreader lid and covering about 30% to about 80% of the adhesive surface of the heat spreader lid, the spreader adhesive layer being over the die.

2. The warpage control structure of claim 1 , wherein the warpage control adhesive layers are separated from the spreader adhesive layer by at least 1 mm.

3. The warpage control structure of claim 1 , wherein an area of the warpage control adhesive layers is from about 0.5 mm 2 to about 100 mm 2 .

4. The warpage control structure of claim 1 , wherein the warpage control adhesive layers is made from a solder, a resin, or a glue.

5. The warpage control structure of claim 1 , wherein a shape of the warpage control adhesive layers is circle, oval, rectangular, donut, or an irregular shape.

6. The warpage control structure of claim 1 , wherein a number of the warpage control adhesive layers disposed on each corner area is one or more.

7. The warpage control structure of claim 1 , wherein the molding layer is made from a composite material comprising a thermoset epoxy resin and a filler.

8. The warpage control structure of claim 7 , wherein a content of the thermoset epoxy resin is 25-35 wt %.

9. The warpage control structure of claim 7 , wherein a content of the filler is 65-73 wt %.

10. The warpage control structure of claim 7 , wherein the thermoset epoxy resin is bisphenol-A epoxy.

11. The warpage control structure of claim 7 , wherein the filler is a silica filler, an alumina filler or a glass filler.

12. The warpage control structure of claim 1 , wherein an inactive surface of the die and the top surface of the molding layer compose a substantial planar top surface.

13. The warpage control structure of claim 1 , wherein the die is disposed on a substrate.

14. The warpage control structure of claim 13 , wherein the substrate is a semiconductor wafer or a portion of a wafer.

15. The warpage control structure of claim 1 , wherein the spreader adhesive layer covers about 50% of the adhesive surface of the heat spreader lid.

16. The warpage control structure of claim 13 , wherein the die and the substrate are electrically connected by a solder bump.

17. A warpage control structure of a semiconductor device package with a heat spreader lid, the warpage control structure comprising:
a warpage control adhesive layer between a top surface of a molding layer and an adhesive surface of the heat spreader lid, wherein a die surrounded by the molding layer is free from coverage by the warpage control adhesive layer; and
a spreader adhesive layer over the die.

18. The warpage control structure of claim 17 , wherein the spreader adhesive layer has a border substantially aligned with an outer edge of the die.

19. A warpage control structure of a semiconductor device package with a heat spreader lid, the warpage control structure comprising:
a warpage control adhesive layer between a top surface of a molding layer and an adhesive surface of the heat spreader lid, wherein a spacing in a direction parallel with the top surface of the molding layer is present between the warpage control adhesive layer and a die surrounded by the molding layer; and
a spreader adhesive layer between the die and the adhesive surface of the heat spreader lid.

20. The warpage control structure of claim 19 , wherein an inactive surface of the die is substantially coplanar with the top surface of the molding layer.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Yew Ming-Chih
• Li Fu-Jen
• Lin Po-Yao
• Liu Kuo-Chuan

Classifications

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W74/117

  the substrate having spherical bumps for external connection · CPC title

• H10W74/15

  on active surfaces of flip-chip devices, e.g. underfills · CPC title

• H10W72/877

  Bump connectors and die-attach connectors · CPC title