Apparatus and method for measurement of the thermal performance of an electrostatic wafer chuck

Patent metadata

Field	Value
Publication number	US-9831111-B2
Application number	US-201414179339-A
Country	US
Kind code	B2
Filing date	Feb 12, 2014
Priority date	Feb 12, 2014
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

An apparatus and method are described for measuring the thermal performance of a wafer chuck, such as an electrostatic chuck. In one example, the apparatus ha a chamber, a base to support a wafer chuck in the chamber, a heater to heat the chuck, a window through the exterior of the chamber, and an infrared imaging system to measure the temperature of the chuck while the chuck is heated.

First claim

What is claimed is:

1. An apparatus comprising:
a vacuum test chamber;
a base proximate the bottom of the chamber configured to support and hold a wafer chuck;
an annular heater above the chuck and electrically coupled to an external power supply to heat the chuck by radiation, the annular heater having a central opening above the chuck;
a window at the top of the chamber to allow infrared radiation to pass through the exterior of the chamber; and
an infrared imaging system in view of the window to receive infrared radiation from the chuck through the central opening of the heater and to measure the temperature of the chuck.

2. The apparatus of claim 1 , further comprising shutters between the heater and the base, the shutters opening to allow heat to radiate from the heater to the chuck and closing to restrict heat radiation from the heater to the chuck.

3. The apparatus of claim 1 , wherein the shutters are hinged against walls of the chamber to pivot with respect to the walls to move up into a closed position to restrict heat radiation and down away from the heater to an open position to allow heat radiation.

4. The apparatus of claim 3 , wherein the chamber is rectangular, wherein a shutter is attached to each of four walls of the rectangular chamber, and wherein the four shutters close by moving a lower end toward the center of the chamber.

5. An apparatus comprising:
a chamber;
a base to support a wafer chuck in the chamber;
a heater to heat the chuck; the heater having a central opening;
a window through the exterior of the chamber; and
an infrared imaging system to measure the temperature of the chuck while the chuck is heated, wherein the heater is between the chuck and the imaging system and wherein the imaging system measures the chuck through the central opening.

6. The apparatus of claim 5 , wherein the heater is in the shape of an annulus and wherein the central opening is in the center of the annulus.

7. The apparatus of claim 5 , further comprising a controller to drive the heater to temperatures suitable for plasma etching.

8. The apparatus of claim 5 , further comprising a vacuum pump to evacuate the chamber before heating the chuck.

9. The apparatus of claim 5 , wherein the chuck is an electrostatic chuck comprising heating elements and coolant zones.

10. The apparatus of claim 5 , wherein the chuck is circular, wherein the heater is circular, and wherein the heater has concentric heating zones that are controlled independently.

11. The apparatus of claim 10 , wherein the heater comprises a metal annulus with circular wire heating filaments.

12. The apparatus of claim 5 , further comprising shutters between the heater and the base, the shutters opening to allow heat to flow from the heater to the chuck and closing to restrict heat flow from the heater to the chuck.

13. The apparatus of claim 12 , wherein each shutter has an axle proximate a chamber wall and a central corner that moves up and down with respect to the axle to respectively open or close.

14. An apparatus comprising:
a vacuum test chamber;
a base proximate the bottom of the chamber configured to support and hold a wafer chuck; and
an annular heater with circular restive heating elements above the chuck and electrically coupled to an external power supply to heat the resistive heating elements and thereby to heat the chuck by radiation, the annular heater having a central opening above the chuck.

15. The apparatus of claim 14 , further comprising a controller to drive the heater to temperatures of a plasma etch chamber.

16. The apparatus of claim 14 , further comprising shutters, each shutter having an axle proximate a chamber wall and a central corner that moves up and down with respect to the axle to respectively open or close the respective shutter.

17. The apparatus of claim 14 , wherein the chuck is circular, wherein the heater is circular, and wherein the heater has concentric heating zones that are controlled independently.

18. The apparatus of claim 17 , wherein the heater comprises a metal annulus and wherein the resistive heating elements are wire heating filaments.

19. The apparatus of claim 14 , further comprising shutters between the heater and the base, the shutters pivoting between and open and a closed position, the open position to allow heat to radiate from the heater to the chuck and the closed position to restrict heat radiation from the heater to the chuck.

20. The apparatus of claim 19 , wherein the shutters are hinged against walls of the chamber to pivot with respect to the walls to move up into a closed position to restrict heat radiation and down away from the heater to an open position to allow heat radiation.

Assignees

• Applied Materials Inc

Inventors

• Busche Matthew J
• Parkhe Vijay D
• Rice Michael R

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• G01N21/9501

  Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title

• H01L21/67248

  Electricity · mapped topic