Method for making tin oxide thin film

Patent metadata

Field	Value
Publication number	US-9828667-B2
Application number	US-201514842198-A
Country	US
Kind code	B2
Filing date	Sep 1, 2015
Priority date	May 8, 2015
Publication date	Nov 28, 2017
Grant date	Nov 28, 2017

Abstract

A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO 2 . An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:O≦2:1.

First claim

What is claimed is:

1. A method for making a SnO thin film comprising:
providing a substrate and a tin oxide sputtering target, wherein the tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO 2 , and an atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:0<2:1;
spacing the substrate and the tin oxide sputtering target from each other;
sputtering the SnO thin film on the substrate by using a medium frequency magnetron sputtering method; and
annealing the SnO thin film in vacuum to obtain a polycrystalline SnO thin film;
wherein a background vacuum used in the annealing is in a range from about 10 −3 Pa to about 10 Pa, an annealing temperature is in a range from about 150° C. to about 300° C., a speed of increasing a temperature of the SnO thin film to the annealing temperature in a range from about 1° C./min to about 20° C./min, the SnO thin film is annealed for about 1 hour to about 10 hours, a carrier mobility of the polycrystalline SnO thin film is in a range from about 0.5 cm 2 V −1 S −1 to about 2 cm 2 V −1 S −1 , and a band gap of the polycrystalline SnO thin film is in a range from about 2.5 eV to 3.0 eV.

2. The method of claim 1 , wherein an angle is formed between a tin oxide sputtering target surface and a substrate surface, the angle is ranged from about 20° to about 85°.

3. The method of claim 1 , wherein a surface of the tin oxide sputtering target is parallel to a surface of the substrate, a distance between the tin oxide sputtering target and the substrate is smaller than or equal to 8 cm.

4. The method of claim 1 , wherein the substrate is preheated at a temperature of about 50° C. to about 400° C. before the sputtering the SnO thin film on the substrate.

5. The method of claim 1 , wherein the magnetron sputtering method is performed in a pure argon gas atmosphere.

6. The method of claim 1 , wherein a current of the medium frequency magnetron sputter method is ranged from about 0.1 A to about 2.0 A, and the sputtering takes place for about 1 minute to about 120 minutes at a pressure of about 0.1 Pa to about 2.0 Pa.

7. The method of claim 6 , wherein the current of the medium frequency magnetron sputter method is ranged from about 1.0 A to about 2.0 A.

8. The method of claim 1 , wherein particle diameters of a Sn powder and a SnO 2 powder are less than or equal to 10 micrometers.

9. The method of claim 8 , wherein a mass ratio of the Sn powder and the SnO 2 powder is in a range from 0.4 to 1.2.

10. The method of claim 1 , wherein a transmittance of the polycrystalline SnO thin film is about 50% to about 80%.

Assignees

• Univ Tsinghua
• Hon Hai Prec Ind Co Ltd

Inventors

• Zhuang da-ming
• Zhao Ming
• Guo Li
• Cao Ming-Jie
• Ouyang liang-qi
• Zhang Leng

Classifications

• C04B2235/77

  Density · CPC title

• C04B35/6261

  Milling · CPC title

• C23C14/0036

  Reactive sputtering · CPC title

• C23C14/3414

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title

• C04B2235/661

  Multi-step sintering · CPC title