Deposition apparatus
US-2024052477-A1 · Feb 15, 2024 · US
Vacuum film formation method and laminate obtained by the method
US9206505B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9206505-B2 |
| Application number | US-201213458692-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 27, 2012 |
| Priority date | Apr 28, 2011 |
| Publication date | Dec 8, 2015 |
| Grant date | Dec 8, 2015 |
How to read this patent
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
- Title
What the patent document calls the invention.
- Abstract
A short plain-language summary of the technical disclosure.
- Assignees and inventors
Who owns or filed the patent and who is credited as inventor.
- Key dates
Filing, priority, publication, and grant dates set the timeline.
- First independent claim
The legal scope of protection — read this for what is actually claimed.
- CPC / IPC classifications
Technology tags used to group this patent with similar filings.
- Citations and related patents
Prior art links and similar publications in this corpus.
Abstract
Official abstract text for this publication.
A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling up the first substrate in the second roll chamber, thereby producing the first substrate, and further comprises similar steps to produce a second substrate. In advance of producing the first substrate with the second material film, the first cathode electrode of the first film formation chamber is removed from the first film formation chamber, and, in advance of producing the second substrate with the first material film, the second cathode electrode of the second film formation chamber is removed from the second film formation chamber.
First claim
Opening claim text (preview).
What is claimed is: 1. A method for continuously subjecting an elongated substrate to vacuum film formation, comprising the steps of: (a) feeding an elongated first substrate wound in a roll form, from a first roll chamber in a first direction from the first roll chamber toward a second roll chamber; (b) degassing the first substrate fed in the first direction; (c) forming a film of a second material on the degassed first substrate, using a target supported by a second cathod…
Assignees
Inventors
Classifications
Electricity · mapped topic
Electricity · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
Patent family
Related publications grouped by family.
External sources
Next steps
Free tools are coming soon. Tell us what you want to track and we'll notify you.
Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US9206505B2 cover?
- A method of continuously subjecting an elongated substrate to vacuum film formation is disclosed. The method comprises the steps of: feeding a first substrate from a first roll chamber in a first direction from the first chamber toward a second roll chamber; degassing the first substrate; forming a film of a second material on the first substrate, in a second film formation chamber; and rolling…
- Who is the assignee on this patent?
- Nashiki Tomotake, Sugawara Hideo, Noguchi Tomonori, and 4 more
- What technology area does this patent fall under?
- Primary CPC classification C23C14/568. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).