Method of forming metal contacts in the barrier layer of a group III-N HEMT

Patent metadata

Field	Value
Publication number	US-9818839-B2
Application number	US-201615237041-A
Country	US
Kind code	B2
Filing date	Aug 15, 2016
Priority date	Apr 3, 2013
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.

First claim

What is claimed is:

1. A method of forming a high electron mobility transistor comprising:
forming a layered structure including a barrier layer directly on a channel layer directly on a buffer layer directly on a substrate;
forming metal contact openings in the layered structure by etching with a first gas combination, each of the metal contact openings having a first bottom surface that lies above and spaced apart from the channel layer; and
etching the layered structure with a second gas combination to deepen each metal contact opening a distance to a second bottom surface, the second bottom surface lying above and spaced apart from the channel layer, wherein the second gas combination etches more of the barrier layer than does the first gas combination and wherein the first gas combination also etches through a cap layer on the barrier layer, and through a passivation layer on the cap layer, the cap layer including GaN, the passivation layer including silicon nitride and wherein the first gas combination includes boron trichloride (BCl 3 ) and sulfur hexafluoride (SF 6 ), and the second gas combination includes boron trichloride (BCl 3 ) and chlorine (Cl 2 ).

2. The method of claim 1 , further comprising depositing a metal contact layer that contacts each second bottom surface and fills the metal contact openings.

3. The method of claim 1 , wherein the channel layer comprises GaN.

4. The method of claim 1 , wherein the barrier layer is AlGaN.

5. A method of forming a high electron mobility transistor comprising:
forming a layered structure including a barrier layer directly on a channel layer directly on a buffer layer directly on a substrate;
forming metal contact openings in the layered structure by etching with a first gas combination, each of the metal contact openings having a first bottom surface that lies above and spaced apart from the channel layer; and
etching the layered structure with a second gas combination to deepen each metal contact opening a distance to a second bottom surface, the second bottom surface lying above and spaced apart from the channel layer, wherein the second gas combination etches more of the barrier layer than does the first gas combination and wherein the first gas combination also etches through a cap layer on the barrier layer, and through a passivation layer on the cap layer, the cap layer including GaN, the passivation layer including silicon nitride;
depositing a metal contact layer that contacts each second bottom surface and fills the metal contact openings; and
planarizing the metal contact layer to form a number of spaced-apart metal contacts that lie in the metal contact openings.

6. The method of claim 5 , wherein the spaced-apart metal contacts consist of a source contact and a drain contact.

7. The method of claim 5 , wherein the metal layer comprises a titanium layer, an aluminum copper layer over the titanium layer, and a titanium nitride layer over the aluminum copper layer.

8. A method of forming a high electron mobility transistor comprising:
forming a layered structure including an AlGaN barrier layer directly on a GaN channel layer directly on a buffer layer directly on a substrate;
forming metal contact openings in the layered structure by etching with a first gas combination, each of the metal contact openings extending into the AlGaN barrier layer and having a first bottom surface that lies above and spaced apart from the GaN channel layer; and
etching the layered structure with a second gas combination to deepen each metal contact opening a distance to a second bottom surface, the second bottom surface lying above and spaced apart from the GaN channel layer, wherein the second gas combination etches more of the AlGaN barrier layer than does the first gas combination and wherein the first gas combination also etches through a cap layer on the AlGaN barrier layer, and through a passivation layer on the cap layer, the cap layer including GaN, the passivation layer including silicon nitride.

9. The method of claim 8 , wherein the first gas combination includes boron trichloride (BCl 3 ) and sulfur hexafluoride (SF 6 ), and the second gas combination includes boron trichloride (BCl 3 ) and chlorine (Cl 2 ).

10. The method of claim 8 , further comprising depositing a metal layer that contacts each second bottom surface and fills the metal contact openings.

11. The method of claim 10 and further comprising planarizing the metal layer to form a number of spaced-apart metal contacts that lie in the metal contact openings.

12. The method of claim 10 , wherein the metal layer comprises a titanium layer, an aluminum copper layer over the titanium layer, and a titanium nitride layer over the aluminum copper layer.

13. The method of claim 11 , wherein the spaced-apart metal contacts consist of a source contact and a drain contact.

14. A method of forming a high electron mobility transistor comprising:
forming a layered structure including an AlGaN barrier layer directly on a GaN channel layer directly on a buffer layer directly on a substrate, wherein the buffer layer comprises a AlN layer, a AlGaN layer, and a GaN layer;
forming metal contact openings in the layered structure by etching with a first gas combination, each of the metal contact openings extending into the AlGaN barrier layer and having a first bottom surface that lies above and spaced apart from the GaN channel layer, wherein the first gas combination includes boron trichloride (BCl 3 ) and sulfur hexafluoride (SF 6 ); and
etching the layered structure with a second gas combination to deepen each metal contact opening a distance to a second bottom surface, the second bottom surface lying above and spaced apart from the GaN channel layer, wherein the second gas combination includes boron trichloride (BCl 3 ) and chlorine (Cl 2 ) and wherein the first gas combination also etches through a cap layer on the AlGaN barrier layer, and through a passivation layer on the cap layer, the cap layer including GaN, the passivation layer including silicon nitride;
depositing a metal layer that contacts each second bottom surface and fills the metal contact openings; and
planarizing the metal layer to form a number of spaced-apart metal contacts that lie in the metal contact openings.

15. The method of claim 14 , wherein the metal layer comprises a titanium layer, an aluminum copper layer over the titanium layer, and a titanium nitride layer over the aluminum copper layer.

16. The method of claim 14 , wherein the spaced-apart metal contacts consist of a source contact and a drain contact.

Assignees

• Texas Instruments Inc

Inventors

• Kondo Yoshikazu
• Wada Shoji
• Yamasaki Hiroshi
• Iwamoto Masahiro

Classifications

• H10P50/246

  of Group III-V materials · CPC title

• H10P14/40

  of conductive or resistive materials · CPC title

• H10D64/0116

  to Group III-V semiconductors · CPC title

• H10D64/256

  for lateral devices wherein the source or drain electrodes are recessed in semiconductor bodies (source or drain electrodes of TFTs H10D30/673) · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title