Apparatus and method of forming self-aligned cuts in mandrel and a non-mandrel lines of an array of metal lines

Patent metadata

Field	Value
Publication number	US-9818641-B1
Application number	US-201615271497-A
Country	US
Kind code	B1
Filing date	Sep 21, 2016
Priority date	Sep 21, 2016
Publication date	Nov 14, 2017
Grant date	Nov 14, 2017

Abstract

A method includes providing a structure having a first, second and third hardmask layer and a mandrel layer disposed respectively over a dielectric stack. An array of mandrels, a beta trench and a gamma trench are patterned into the structure. First inner spacers are formed on sidewalls of the beta trench and second inner spacers are formed on sidewalls of the gamma trench. The first and second inner spacers form a portion of a pattern. The pattern is etched into the dielectric stack to form an array of mandrel and non-mandrel metal lines extending in a Y direction and being self-aligned in an X direction. The portion of the pattern formed by the first and second inner spacers forms a first pair of cuts in a mandrel line and a second pair of cuts in a non-mandrel line respectively. The cuts are self-aligned in the Y direction.

First claim

What is claimed is:

1. A method comprising:
providing a structure having a first hardmask layer, second hardmask layer, third hardmask layer and mandrel layer disposed respectively over a dielectric stack;
patterning an array of mandrels into the mandrel layer;
patterning a beta trench into the mandrels;
patterning a gamma trench into the second hardmask layer;
forming self-aligned first inner spacers on sidewalls of the beta trench;
forming self-aligned second inner spacers on sidewalls of the gamma trench, the first and second inner spacers forming a portion of a pattern; and
etching the pattern into the dielectric stack to form an array of alternating mandrel and non-mandrel metal lines extending longitudinally in a Y direction and being self-aligned in a perpendicular X direction, the portion of the pattern formed by the first and second inner spacers forming a first pair of mandrel line cuts in a mandrel line and a second pair of non-mandrel line cuts in a non-mandrel line respectively, the first and second pair of line cuts being self-aligned in the Y direction.

2. The method of claim 1 wherein the cuts in each pair of mandrel and non-mandrel line cuts are separated by a center-to-center distance that is 100 nm or less.

3. The method of claim 1 wherein the cuts in each pair of mandrel and non-mandrel line cuts are separated by a center-to-center distance of 50 nm or less.

4. The method of claim 1 comprising:
patterning the array of mandrels into the third hardmask layer prior to patterning the beta trench and gamma trench, wherein the second hardmask layer between the mandrels is exposed;
patterning the beta trench into the mandrels to expose the third hardmask layer within the beta trench; and
patterning the gamma trench into the second hardmask layer between the mandrels to expose the first hardmask layer within the gamma trench.

5. The method of claim 1 comprising:
disposing a gamma lithographic stack over the structure;
utilizing a single non-mandrel line cut mask to pattern a gamma opening into the gamma lithographic stack; and
anisotropically etching the gamma lithographic stack to form the gamma trench into the second hardmask layer and to expose the first hardmask layer within the gamma trench.

6. The method of claim 1 comprising:
disposing a beta lithographic stack over the structure;
utilizing a single mandrel line cut mask to pattern a beta opening into the beta lithographic stack; and
anisotropically etching the beta lithographic stack to form the beta trench into the mandrels and to expose the third hardmask layer within the beta trench.

7. The method of claim 1 wherein the mandrel and non-mandrel line cuts have an equal width, the method comprising:
patterning the gamma trench to have a gamma trench width equal to a center-to-center distance between the non-mandrel line cuts plus the width of a non-mandrel line cut; and
patterning the beta trench to have a beta trench width equal to a center-to-center distance between the mandrel line cuts plus the width of a mandrel line cut.

8. The method of claim 1 comprising:
disposing a spacer layer over the beta trench and gamma trench, the spacer layer having a spacer layer thickness;
anisotropically etching the spacer layer to form the first and second inner spacers, the inner spacers having a width equal to the thickness of the spacer layer.

9. The method of claim 1 comprising:
the mandrel line cuts each have a width substantially equal to a width of the first inner spacers;
the non-mandrel line cuts each have a width substantially equal to a width of the second inner spacers;
an edge to edge distance between the cuts of the first pair of mandrel line cuts substantially equals an edge to edge distance between the first inner spacers; and
an edge to edge distance between the cuts of the second pair of non-mandrel line cuts substantially equals an edge to edge distance between the second inner spacers.

10. A method comprising:
providing a structure having a first hardmask layer, second hardmask layer, third hardmask layer and mandrel layer disposed respectively over a dielectric stack;
patterning an array of mandrels into the mandrel layer;
patterning one of a gamma trench into the mandrels and a beta trench into the second hardmask layer;
forming self-aligned first inner spacers on sidewalls of the one of the gamma trench and the beta trench, the first inner spacers forming a portion of a pattern; and
etching the pattern into the dielectric stack to form an array of alternating mandrel and non-mandrel metal lines extending longitudinally in a Y direction and being self-aligned in a perpendicular X direction, the portion of the pattern formed by the first inner spacers forming a first pair of line cuts in one of a mandrel line and a non-mandrel line, the cuts in the first pair of line cuts being separated by a center-to-center distance of less than 100 nm and being self-aligned in the Y direction.

11. The method of claim 10 comprising:
patterning the other of a gamma trench into the mandrels and a beta trench into the second hardmask layer;
forming self-aligned second inner spacers on sidewalls of one of the gamma trench and the beta trench, the second inner spacers forming a portion of the pattern; and
etching the pattern into the dielectric stack to form the array of alternating mandrel and non-mandrel metal lines, the portion of the pattern formed by the second inner spacers forming a second pair of line cuts in the other of a mandrel line and a non-mandrel line, the cuts in the second pair of line cuts being separated by a center-to-center distance of less than 100 nm and being self-aligned in the Y direction.

12. The method of claim 11 wherein the cuts in the first and second pair of line cuts are separated by a center-to-center distance of 25 nm or less.

13. The method of claim 11 comprising:
patterning the array of mandrels into the third hardmask layer prior to patterning the beta trench and gamma trench, wherein the second hardmask layer between the mandrels is exposed;
patterning the beta trench into the mandrels to expose the third hardmask layer within the beta trench; and
patterning the gamma trench into the second hardmask layer between the mandrels to expose the first hardmask layer within the gamma trench.

14. The method of claim 11 wherein the first pair of line cuts is a pair of mandrel line cuts in the mandrel line, the second pair of line cuts is a pair of non-mandrel line cuts in a non-mandrel line and all cuts have an equal width, the method comprising:
patterning the gamma trench to have a gamma trench width substantially equal to the center-to-center distance between the pair of non-mandrel line cuts plus the width of a non-mandrel line cut; and
patterning the beta trench to have a beta trench width substantially equal to the center to center distance between the pair of mandrel line cuts plus the width of a mandrel line.

15. The method of claim 11 comprising:
disposing a spacer layer over the structure after patterning the beta trench and gamma trench, the spacer layer having a substantially uniform spacer layer thickness; and
anisotropically etching the spacer layer to form:
first spacers on sidewalls of the mandrels,
the first inner spacers on the sidewalls of the beta trench;
the second inner spacers on the sidewalls of the gamma trench,
an exposed portion of the third hardmask layer within the beta trench, the exposed portion of the third hardmask layer defining an edge-to edge distance between the first inner spacers, and
an exposed portion of the fi

Assignees

• Globalfoundries Inc

Inventors

• Bouche Guillaume
• Stephens Jason Eugene

Classifications

• H10P50/73

  using masks for insulating materials · CPC title

• H10W20/43

  Layouts of interconnections · CPC title

• H10W20/069

  by forming self-aligned vias or self-aligned contact plugs · CPC title

• H10W20/089 Primary

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10P72/57

  Mask-wafer alignment · CPC title