Optical modulating device having gate structure
US-9632216-B2 · Apr 25, 2017 · US
US9817250B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9817250-B2 |
| Application number | US-201615131431-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 18, 2016 |
| Priority date | Jul 21, 2015 |
| Publication date | Nov 14, 2017 |
| Grant date | Nov 14, 2017 |
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An optical modulator includes a plurality of nanostructures, each nanostructure of the plurality of nanostructures having a refractive index that is variable; a first insulation layer having a refractive index that is less than the individual refractive indexes of the plurality of nanostructures and surrounding the plurality of nanostructures; and a refractive index changer configured to change the refractive indexes of the plurality of nanostructures.
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What is claimed is: 1. An optical modulator comprising: a plurality of nanostructures, each nanostructure of the plurality of nanostructures having a refractive index that is variable; a first insulation layer having a refractive index that is less than the individual refractive indexes of the plurality of nanostructures and surrounding the plurality of nanostructures; and a refractive index changer configured to change the refractive indexes of the plurality of nanostructures. 2. The optical modulator of claim 1 , wherein the refractive index changer comprises: a first electrode layer and a second electrode layer spaced apart from the first electrode layer, the plurality of nanostructures being provided between the first electrode layer and the second electrode layer; and a voltage source configured to apply voltage between the first electrode layer and the second electrode layer to change the refractive indexes of the plurality of nanostructures. 3. The optical modulator of claim 2 , wherein the second electrode layer comprises a plurality of second sub-electrodes. 4. The optical modulator of claim 3 , wherein the first electrode layer is a common electrode configured to apply a voltage to the second sub-electrodes. 5. The optical modulator of claim 3 , further comprising an electrical addressing structure configured to control the voltage applied to the second sub-electrodes. 6. The optical modulator of claim 3 , wherein the second electrode layer further comprises a second insulation layer in which the second sub-electrodes are embedded. 7. The optical modulator of claim 6 , wherein a refractive index of the second insulation layer is greater than the refractive index of the first insulation layer. 8. The optical modulator of claim 3 , wherein the nanostructures are provided on the second sub-electrodes. 9. The optical modulator of claim 3 , wherein the second sub-electrodes include a doped silicon material. 10. The optical modulator of claim 2 , wherein at least one of the first electrode layer and the second electrode layer is configured to transmit light. 11. The optical modulator of claim 1 , wherein the nanostructures comprise a non-centrosymmetric material. 12. The optical modulator of claim 11 , wherein the non-centrosymmetric material comprises III-V group compounds. 13. The optical modulator of claim 12 , wherein the non-centrosymmetric material comprises one of GaP, InP and GaAs. 14. The optical modulator of claim 1 , wherein the nanostructures are doped with a metal impurity. 15. The optical modulator of claim 14 , wherein the metal impurity comprises one of Fe, Cu, Cr and Mg. 16. The optical modulator of claim 1 , wherein the nanostructures each respectively have a cross-section in a shape of a circle, an ellipse, a rectangle, or a square. 17. The optical modulator of claim 1 , wherein a distance between centers of two adjacent nanostructures, among the plurality of nanostructures, is less than or equal to λ, where λ is a resonance wavelength of the optical modulator. 18. The optical modulator of claim 1 , wherein the nanostructures each respectively have a height that is λ/4 to λ, where λ is a resonance wavelength of the optical modulator. 19. The optical modulator of claim 1 , further comprising a polarization plate provided on the plurality of nanostructures. 20. The optical modulator of claim 1 , further comprising a color filter provided on the plurality of nanostructures. 21. The optical modulator of claim 2 , wherein the nanostructures are arranged in a shape or a pattern which changes depending on a location of the nanostructures within the optical modulator. 22. The optical modulator of claim 21 , wherein the first electrode layer and the second electrode layer are configured to apply an identical voltage to the plurality of nanostructures.
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