Light modulators and optical apparatuses including the same

Patent metadata

Field	Value
Publication number	US-9547186-B2
Application number	US-201514965105-A
Country	US
Kind code	B2
Filing date	Dec 10, 2015
Priority date	Dec 30, 2010
Publication date	Jan 17, 2017
Grant date	Jan 17, 2017

Abstract

Provided are examples of light modulators and optical apparatuses that may include the light modulators. A light modulator may include a plasmonic nano-antenna and an element for changing plasmon resonance characteristics of the plasmonic nano-antenna. The plasmon resonance characteristics of the plasmonic nano-antenna may be changed due to a change in refractive index of the element, and thus light may be modulated.

First claim

What is claimed is:

1. A light modulator comprising:
a plasmonic nano-antenna;
a refractive index change layer that is disposed adjacent to the plasmonic nano-antenna; and
a refractive index changing unit configured to change a refractive index of the refractive index change layer,
wherein, in response to the refractive index changing unit changing the refractive index of the refractive index change layer, plasmon resonance characteristics of the plasmonic nano-antenna are changed, and
wherein the refractive index changing unit is configured to change the refractive index of the refractive index change layer by selective concentration of negative charge at a predetermined portion of the refractive index change layer.

2. The light modulator of claim 1 , wherein the refractive index change layer comprises a material that has a refractive index that is capable of being changed by an electrical signal.

3. The light modulator of claim 1 , wherein the refractive index change layer comprises an electrically conductive transparent material.

4. The light modulator of claim 3 , wherein the electrically conductive transparent material comprises at least one of indium tin oxide (ITO) and a zinc oxide (ZnO)-based material.

5. The light modulator of claim 1 , wherein the refractive index changing unit is configured to concentrate the negative charge at an upper layer portion or a lower layer portion of the refractive index change layer.

6. The light modulator of claim 1 , wherein the refractive index changing unit comprises:
first and second electrodes spaced apart from each other, wherein the refractive index change layer is disposed between the first and second electrodes; and
a voltage applying unit configured to apply a voltage between the first and second electrodes.

7. The light modulator of claim 6 , wherein at least a portion of the refractive index change layer is used as the first electrode, and
the plasmonic nano-antenna is disposed between the refractive index change layer and the second electrode.

8. The light modulator of claim 7 , wherein the refractive index change layer includes a first portion and a second portion, the second portion being closer to the plasmonic nano-antenna than the first portion, and
the refractive index changing unit is configured to change the refractive index of the refractive index change layer by selective concentration of negative charge at the second portion.

9. The light modulator of claim 7 , further comprising a dielectric material layer that is disposed between the refractive index change layer and the plasmonic nano-antenna.

10. The light modulator of claim 9 , wherein at least a portion of the plasmonic nano-antenna is an electrode for the refractive index changing unit.

11. The light modulator of claim 6 , wherein at least a portion of the refractive index change layer is used as the first electrode,
the second electrode is disposed at a side of the refractive index change layer and the second electrode is spaced apart from the refractive index change layer, and
the plasmonic nano-antenna is disposed at the other side of the refractive index change layer.

12. The light modulator of claim 11 , wherein the refractive index change layer includes a first portion and a second portion, the second portion being closer to the plasmonic nano-antenna than the first portion, and
the refractive index changing unit is configured to change the refractive index of the refractive index change layer by selective concentration of negative charge at the first portion.

13. The light modulator of claim 11 , further comprising a dielectric material layer that is disposed between the refractive index change layer and the second electrode.

14. The light modulator of claim 1 , wherein the plasmonic nano-antenna comprises a nanostructure, the nanostructure is disposed on an upper surface of the refractive index change layer, a dielectric layer is further provided on the upper surface of the refractive index change layer to cover an upper surface and a side surface of the nanostructure, and the refractive index change layer is located under the nanostructure and the dielectric layer.

15. The light modulator of claim 14 , wherein the refractive index change layer is farther from a light incident side of the light modulator than the dielectric layer.

16. The light modulator of claim 1 , wherein the light modulator is one of a reflective type, a transmissive type, or a transflective type.

17. An optical apparatus comprising the light modulator of claim 1 .

Assignees

• Samsung Electronics Co Ltd

Inventors

• Han Seung-Hoon
• Park Yong-Hwa
• Shin Chang-Gyun
• Lee Hong-Seok

Classifications

• G02B5/008

  Surface plasmon devices (diffractive gratings with a pitch less than or comparable to the wavelength G02B5/1809; surface plasmons in integrated optics G02B6/1226; optical analysis of materials by means of surface plasmons G01N21/553) · CPC title

• G02F1/01

  for the control of the intensity, phase, polarisation or colour  (G02F1/29, G02F1/35 take precedence) · CPC title

• G02F2203/10

  plasmon · CPC title

• B82Y20/00

  Nanooptics, e.g. quantum optics or photonic crystals · CPC title

• G02F1/19

  based on variable-reflection or variable-refraction elements not provided for in groups G02F1/015 - G02F1/169 · CPC title