Multi-VT gate stack for III-V nanosheet devices with reduced parasitic capacitance

Patent metadata

Field	Value
Publication number	US-9812449-B2
Application number	US-201615158459-A
Country	US
Kind code	B2
Filing date	May 18, 2016
Priority date	Nov 20, 2015
Publication date	Nov 7, 2017
Grant date	Nov 7, 2017

Abstract

A nanosheet field effect transistor design in which the threshold voltage is adjustable by adjusting the composition of the gate. The channel of the nanosheet field effect transistor may be composed of a III-V semiconductor material, and the gate, which may be separated from the channel by a high dielectric constant dielectric layer, may also be composed of a III-V semiconductor material. Adjusting the composition of the gate may result in a change in the affinity of the gate, in turn resulting in a change in the threshold voltage. In some embodiments the channel is composed, for example, of In x Ga 1-x As, with x between 0.23 and 0.53, and the gate is composed of InAs 1-y N y with y between 0.0 and 0.4, and the values of x and y may be adjusted to adjust the threshold voltage.

First claim

What is claimed is:

1. A field effect transistor, comprising:
a channel comprising, as a major component, a first III-V semiconductor material;
a dielectric layer directly on the channel; and
a semiconductor gate layer, the dielectric layer being between the semiconductor gate layer and the channel, the semiconductor gate layer comprising, as a major component, a noncrystalline semiconductor,
wherein the semiconductor gate layer comprises, as a major component, In x P 1-x N, wherein x is between 0.1 and 0.9.

2. A field effect transistor, comprising:
a channel comprising, as a major component, a first III-V semiconductor material;
a dielectric layer on the channel; and
a semiconductor gate layer comprising, as a major component, a noncrystalline semiconductor,
wherein the semiconductor gate layer comprises, as a major component, InAs 1-x N x , and
wherein x is between 0.1 and 0.3.

3. The transistor of claim 2 , wherein the semiconductor gate layer is less than 15 nm thick.

4. The transistor of claim 2 , wherein the semiconductor gate layer comprises a dopant at a concentration exceeding 1×10 19 /cm 3 .

5. The transistor of claim 4 , wherein the semiconductor gate layer comprises the dopant at a concentration exceeding 5×10 19 /cm 3 .

6. The transistor of claim 5 , wherein the semiconductor gate layer comprises the dopant at a concentration exceeding 1×10 20 /cm 3 .

7. The transistor of claim 2 , wherein the first III-V semiconductor material is In x Ga 1-x As, wherein x is between 0.0 and 1.0.

8. The transistor of claim 2 , wherein the noncrystalline semiconductor is a polycrystalline semiconductor.

9. The transistor of claim 2 , further comprising a metal gate layer on the semiconductor gate layer.

10. The transistor of claim 2 , wherein the first III-V semiconductor material comprises a first chemical element and a second chemical element, and the noncrystalline semiconductor of the semiconductor gate layer comprises the first chemical element and the second chemical element.

11. A field effect transistor, comprising:
a channel comprising, as a major component, a first III-V semiconductor material;
a dielectric layer on the channel; and
a semiconductor gate layer comprising, as a major component, a noncrystalline semiconductor,
wherein the first III-V semiconductor material is In x Ga 1-x As, and
wherein x is between 0.23 and 0.53.

12. The transistor of claim 11 , wherein the semiconductor gate layer comprises, as a major component, InAs 1-x N x , wherein x is between 0.0 and 1.0.

13. The transistor of claim 12 , wherein x is between 0.0 and 0.4.

14. An integrated circuit comprising a first field effect transistor and a second field effect transistor, each of the first field effect transistor and the second field effect transistor comprising:
a channel comprising, as a major component, a first III-V semiconductor material;
a dielectric layer directly on the channel; and
a semiconductor gate layer, the dielectric layer being between the semiconductor gate layer and the channel, the semiconductor gate layer comprising, as a major component, a noncrystalline semiconductor,
wherein the semiconductor gate layer comprises, as a major component, InAs 1-x N x , and
wherein x is between 0.1 and 0.3.

15. The integrated circuit of claim 14 , wherein a threshold voltage of the first field effect transistor is at least 30 mV greater than a threshold voltage of the second field effect transistor.

16. The integrated circuit of claim 15 , wherein the threshold voltage of the first field effect transistor is at least 60 mV greater than the threshold voltage of the second field effect transistor.

17. The integrated circuit of claim 15 , wherein the semiconductor gate layer of the first field effect transistor has the same thickness as the semiconductor gate layer of the second field effect transistor.

18. The integrated circuit of claim 17 , further comprising a third field effect transistor comprising:
a channel comprising, as a major component, a first III-V semiconductor material;
a dielectric layer on the channel; and
a semiconductor gate layer comprising, as a major component, a noncrystalline semiconductor,
wherein:
the threshold voltage of the second field effect transistor is at least 30 mV greater than a threshold voltage of the third field effect transistor, and
the semiconductor gate layer of the third field effect transistor has the same thickness as the semiconductor gate layer of the second field effect transistor.

19. The transistor of claim 1 , wherein the semiconductor gate layer is less than 15 nm thick.

20. The transistor of claim 1 , wherein the noncrystalline semiconductor is a polycrystalline semiconductor.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Obradovic Borna J
• Rakshit Titash
• Rodder Mark S
• Wang Wei-E

Classifications

• H01L29/0665

  Electricity · mapped topic

• H01L29/4916

  Electricity · mapped topic

• H01L29/20

  Electricity · mapped topic

• H01L27/088 Primary

  Electricity · mapped topic

• H01L29/4232

  Electricity · mapped topic