Temperature-resistant, transparent electrical conductor, method for the production thereof, and use thereof
US-2015101849-A1 · Apr 16, 2015 · US
US9809489B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9809489-B2 |
| Application number | US-201514849960-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 10, 2015 |
| Priority date | Sep 12, 2014 |
| Publication date | Nov 7, 2017 |
| Grant date | Nov 7, 2017 |
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A composition for forming a conductive film includes at least one of a metal salt (A1) and a metal particle (A2) as component (A) that serves as a metal source of the conductive film, and a metalloxane compound (B). The metal salt (A1) and the metal particle (A2) contain one or more metals selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au. The metalloxane compound (B) has at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. Preferably, the metal salt (A1) is a carboxylate containing a metal selected from the group consisting of Cu, Ag, and Ni. Preferably, the metal particle (A2) has an average particle diameter of 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni.
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What is claimed is: 1. A composition for forming a conductive film, the composition comprising: a metal salt (A1) and, optionally, a metal particle (A2) as a component (A) that serves as a metal source of the conductive film, wherein the metal particle (A2) comprise at least one metal selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au; wherein the metal salt (A1) is a carboxylate comprising a metal selected from the group consisting of Cu, Ag, and Ni; and a metalloxane compound (B) having at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain. 2. The composition for forming a conductive film according to claim 1 , wherein the carboxylate is at least one selected from the group consisting of copper formate, silver formate, and nickel formate. 3. The composition for forming a conductive film according to claim 1 , wherein the composition comprises the metal particle (A2) that has an average particle diameter of from 5 nm to 100 nm and comprises a metal selected from the group consisting of Cu, Ag, and Ni. 4. The composition for forming a conductive film according to claim 1 , wherein the content of the component (B) is from 20% by mass to 80% by mass relative to 100% by mass in total of the masses of the component (A) and the component (B). 5. The composition for forming a conductive film according to claim 1 , further comprising (C) an amine compound. 6. A method for producing a plating film, the method comprising: forming a conductive film from a composition comprising: a metal salt (A1) and, optionally, a metal particle (A2) as a component (A) that serves as a metal source of the conductive film, wherein the metal particle (A2) comprises at least one metal selected from the group consisting of Ni, Pd, Pt, Cu, Ag, and Au; wherein the metal salt (A1) is a carboxylate comprising a metal selected from the group consisting of Cu, Ag, and Ni; and a metalloxane compound (B) having at least one metal atom selected from the group consisting of Ti, Zr, Sn, Si, and Al in its main chain; and producing a plating film by plating the conductive film. 7. The method for producing a plating film according to claim 6 , wherein the carboxylate is at least one selected from the group consisting of copper formate, silver formate, and nickel formate.
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