Semiconductor device for a system for measuring the temperature, and manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9806216-B2
Application number	US-201615052695-A
Country	US
Kind code	B2
Filing date	Feb 24, 2016
Priority date	Jul 14, 2015
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

A semiconductor device for a system for measuring temperature, which includes a first UV detector and a second UV detector. The first and second UV detectors generate a first current and a second current, respectively, as a function of the irradiance in the ultraviolet band. Moreover, the first and second UV detectors have coefficients of variation of the current with temperature, at constant irradiance, that are different from one another.

First claim

The invention claimed is:

1. A semiconductor device for a system for measuring temperature, said device comprising a first UV detector and a second UV detector, said first and second UV detectors being configured to generate a first current and a second current, respectively, as a function of an ultraviolet irradiance; and wherein the first and second UV detectors have coefficients of variation of current with temperature, at constant irradiance, that are different from one another.

2. The device according to claim 1 , wherein:
the first UV detector includes:
a first cathode region of semiconductor material; and
a first anode region arranged in contact with the first cathode region; and

the second UV detector includes:
a second cathode region of semiconductor material; and
a second anode region arranged in contact with the second cathode region;

the first anode region and the first cathode region form a first Schottky junction; and
the second anode region and the second cathode region form a second Schottky junction.

3. The device according to claim 2 , wherein said first and second cathode regions are made of silicon carbide.

4. The device according to claim 2 , wherein said first and second anode regions are made of a silicide.

5. The device according to claim 2 , wherein the first and second UV detectors are formed in a die which comprises a body of semiconductor material, said body forming the first and second cathode regions; and wherein the first and second anode regions are arranged in contact with said body and are laterally spaced apart with respect to one another.

6. The device according to claim 5 , wherein said body has a front surface, said first and second anode regions extending in contact with said front surface; and
wherein at least one of the first and second anode regions is patterned in such a way as to expose an underlying portion of the front surface.

7. The device according to claim 6 , wherein the first and second anode regions are patterned in such a way as to expose a first portion and a second portion of the front surface, respectively, the first and second exposed portions of the front surface having different areas.

8. A system comprising:
a semiconductor device that includes:
a first UV detector and a second UV detector, said first and second UV detectors being configured to generate a first current and a second current, respectively, as a function of an ultraviolet irradiance; and wherein the first and second UV detectors have coefficients of variation of current with temperature, at constant irradiance, that are different from one another; and

a processing unit electrically coupled to the first UV detector and to the second UV detector and configured to determine an estimate of a variation of a temperature of the semiconductor device based on a first quantity and a second quantity indicating, respectively, a variation of the first current and a variation of the second current.

9. The system according to claim 8 , wherein:
the first UV detector includes:
a first cathode region of semiconductor material; and
a first anode region arranged in contact with the first cathode region; and

the second UV detector includes:
a second cathode region of semiconductor material; and
a second anode region arranged in contact with the second cathode region;

the first anode region and the first cathode region form a first Schottky junction; and
the second anode region and the second cathode region form a second Schottky junction.

10. The system according to claim 9 , wherein said first and second cathode regions are made of silicon carbide.

11. The system according to claim 9 , wherein the first and second UV detectors are formed in a die which comprises a body of semiconductor material, said body forming the first and second cathode regions; and wherein the first and second anode regions are arranged in contact with said body and are laterally spaced apart with respect to one another.

12. The system according to claim 11 , wherein said body has a front surface, said first and second anode regions extending in contact with said front surface; and wherein at least one of the first and second anode regions is patterned in such a way as to expose an underlying portion of the front surface.

13. The system according to claim 12 , wherein the first and second anode regions are patterned in such a way as to expose a first portion and a second portion of the front surface, respectively, the first and second exposed portions of the front surface having different areas.

14. A method, comprising:
manufacturing a semiconductor device for a system for measuring temperature, said manufacturing including forming a first UV detector and a second UV detector, which are configured to generate a first current and a second current, respectively, as a function of the irradiance in the ultraviolet band; and wherein forming said first and second UV detectors includes forming said first and second UV detectors with coefficients of variation of the current with temperature, at constant irradiance, that are different from one another.

15. The method according to claim 14 , wherein the forming includes:
forming a first cathode region of semiconductor material;
forming a first anode region, so that it forms a first Schottky junction with the first cathode region;
forming a second cathode region of semiconductor material; and
forming a second anode region, so that it forms a second Schottky junction with the second cathode region.

16. The method according to claim 15 , comprising making said first and second cathode regions of silicon carbide.

17. The method according to claim 15 , comprising making said first and second anode regions of a silicide.

18. The method according to claim 15 , wherein forming said first and second UV detectors includes forming said first and second UV detectors in one and the same die, which includes a semiconductor body, in such a way that said body forms the first and second cathode regions;
and wherein forming the first and second anode regions comprises:
forming a conductive layer in contact with the semiconductor body; and
selectively removing portions of the conductive layer in such a way as to separate a first portion and a second portion of the conductive layer;

and wherein forming the first and second anode regions comprise carrying out a silicidation of said first and second portions of the conductive layer.

19. The method according to claim 18 , further comprising forming a dielectric region in contact with said semiconductor body, said dielectric region being arranged between the first and second anode regions.

20. The method according to claim 19 , wherein forming the first and second anode regions comprise forming the first and second anode regions so that they expose, respectively, a first underlying portion and a second underlying portion of semiconductor body, which have different areas.

Assignees

• St Microelectronics Srl

Inventors

• Mazzillo Massimo Cataldo

Classifications

• H01L31/1812

  Electricity · mapped topic

• G01K7/01

  using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title

• H01L31/022408

  Electricity · mapped topic

• H01L31/028

  Electricity · mapped topic

• G01J5/22

  Electrical features thereof · CPC title