Selective deposition of metallic films

Patent metadata

Field	Value
Publication number	US-9805974-B1
Application number	US-201615177198-A
Country	US
Kind code	B1
Filing date	Jun 8, 2016
Priority date	Jun 8, 2016
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on a first metallic surface relative to a second surface comprising silicon. In some embodiments the reaction chamber in which the selective deposition occurs may optionally be passivated prior to carrying out the selective deposition process. In some embodiments selectivity of above about 50% or even about 90% is achieved.

First claim

What is claimed is:

1. A process for selectively depositing a film on a substrate comprising a first metallic surface and a second surface comprising silicon, the process comprising:
passivating a reaction chamber in which a selective deposition process is to be performed;
subjecting the substrate to a first surface treatment process comprising exposing the substrate to a plasma;
subsequent to the first surface treatment process, performing one or more selective deposition cycles in the reaction chamber, each cycle comprising;
contacting the substrate with a first precursor comprising silicon or boron to selectively form a layer of first material comprising Si or B on the first metallic surface relative to the second surface comprising silicon; and
converting the first material on the first metallic surface to a second metallic material by exposing the first material to a second precursor comprising metal;

wherein the second metallic material is deposited on the first metallic surface of the substrate relative to the second surface comprising silicon with a selectivity of greater than about 50%.

2. The process of claim 1 , wherein the first metallic surface comprises copper.

3. The process of claim 1 , wherein the first metallic surface comprises cobalt.

4. The process of claim 1 , wherein the second surface comprising silicon comprises SiO 2 .

5. The process of claim 1 , wherein the second metallic material comprises tungsten.

6. The process of claim 1 , wherein passivating the reaction chamber comprises depositing a passivation layer on surfaces in the reaction chamber which may be exposed to the first or second precursor during one or more of the selective deposition cycles.

7. The process of claim 6 , wherein the passivation layer is formed by a vapor deposition process.

8. The process of claim 7 , wherein the passivation layer is formed by a plasma enhanced chemical vapor deposition (PECVD) process.

9. The process of claim 7 , wherein the passivation layer is formed by a plasma enhanced atomic layer deposition (PEALD) process.

10. The process of claim 8 , wherein the passivation layer is formed by conducting a first vapor phase silicon precursor and a second vapor phase nitrogen precursor into the reaction chamber and wherein plasma is present in the reaction chamber.

11. The process of claim 9 , wherein the passivation layer is formed by alternately and sequentially exposing the reaction chamber to a first precursor comprising disilane and a second precursor comprising atomic nitrogen, nitrogen radicals, or nitrogen plasma and atomic hydrogen, hydrogen radicals or hydrogen plasma.

12. The process of claim 1 , wherein the passivation layer comprises SiN.

13. The process of claim 1 , wherein the plasma is generated from ethanol.

14. The process of claim 1 , wherein the plasma is generated from NH 3 and H 2 .

15. The process of claim 1 , wherein the first precursor comprises a silane.

16. The process of claim 15 , wherein the first precursor comprises disilane.

17. The process of claim 1 , wherein the second precursor comprises a metal halide.

18. The process of claim 17 , wherein the second precursor comprises WF 6 .

19. The process of claim 1 , further comprising subjecting the substrate to a second surface treatment process prior to subjecting the substrate to a first surface treatment process.

20. The process of claim 19 , wherein the second surface treatment process comprises exposing the substrate to a treatment reactant, wherein the treatment reactant passivates the second surface.

21. The process of claim 1 , wherein the second metallic material is deposited on the first metallic surface of the substrate relative to the second surface comprising silicon with a selectivity of greater than about 90%.

Assignees

• Asm Ip Holding Bv

Inventors

• Chen Shang
• Watarai Toshiharu
• Onuma Takahiro
• Ishikawa Dai
• Namba Kunitoshi

Classifications

• H10P14/416

  of highly doped semiconductor materials, e.g. polysilicon layers or amorphous silicon layers · CPC title

• H10P14/412

  Deposition of metallic or metal-silicide materials · CPC title

• H10W20/4421

  the principal metal being copper · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• H10W20/096

  by contacting with gases, liquids or plasmas · CPC title