CMP composition for silicon nitride removal

Patent metadata

Field	Value
Publication number	US-9803109-B2
Application number	US-201514612736-A
Country	US
Kind code	B2
Filing date	Feb 3, 2015
Priority date	Feb 3, 2015
Publication date	Oct 31, 2017
Grant date	Oct 31, 2017

Abstract

The invention provides a chemical-mechanical polishing composition comprising: (a) colloidal silica particles that are surface modified with metal ions selected from Mg, Ca, Al, B, Be, and combinations thereof, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm 2 to about 8 hydroxyls per nm 2 of a surface area of the particles, (b) an anionic surfactant, (c) a buffering agent, and (d) water, wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal. The invention further provides a method of chemically-mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrate contains silicon nitride, silicon oxide, and/or polysilicon.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition comprising:
(a) colloidal silica particles that are surface modified with metal ions selected from aluminum ions, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm 2 to about 8 hydroxyls per nm 2 of a surface area of the particles, and wherein the colloidal silica particles comprise about 0.1 to about 0.2 metal ions per nm 2 of the surface area of the particles,
(b) an anionic surfactant,
(c) a buffering agent, and
(d) water,
wherein the polishing composition has a pH of about 2 to about 7, and
wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal.

2. The polishing composition of claim 1 , wherein the colloidal silica particles are present in an amount of from about 0.1 wt. % to about 5 wt. %.

3. The polishing composition of claim 1 , wherein the colloidal silica particles have an average particle diameter of from about 20 nm to about 100 nm.

4. The polishing composition of claim 1 , wherein the anionic surfactant is a polymer or copolymer of monomers comprising functional groups selected from carboxylic acids, sulfonic acids, phosphoric acids, and combinations thereof, wherein the anionic surfactant has an average molecular weight of about 100,000 Daltons or less, and wherein the anionic surfactant is present in an amount of about 5 ppm to about 200 ppm.

5. The polishing composition of claim 4 , wherein the anionic surfactant is a poly(acrylic acid co maleic acid) copolymer.

6. The polishing composition of claim 1 , wherein the anionic surfactant is a monomeric surfactant comprising at least one sulfonic acid group.

7. The polishing composition of claim 1 , wherein the polishing composition further comprises a nonionic surfactant.

8. The polishing composition of claim 1 , wherein the buffering agent comprises an organic carboxylic acid.

9. The polishing composition of claim 1 , wherein the polishing composition is substantially free of hydrogen peroxide, ferric nitrate, potassium iodate, peracetic acid, and potassium permanganate.

10. A method of chemically mechanically polishing a substrate comprising:
(i) contacting a substrate with a polishing pad and a chemical-mechanical polishing composition comprising:
(a) colloidal silica particles that are surface modified with metal ions selected from aluminum ions, and wherein the colloidal silica particles have a surface hydroxyl group density of from about 1.5 hydroxyls per nm 2 to about 8 hydroxyls per nm 2 of a surface area of the particles, and wherein the colloidal silica particles comprise about 0.1 to about 0.2 metal ions per nm 2 of the surface area of the particles,
(b) an anionic surfactant,
(c) a buffering agent, and
(d) water,
wherein the polishing composition has a pH of about 2 to about 7, and wherein the polishing composition is substantially free of an oxidizing agent that oxidizes a metal,
(ii) moving the polishing pad and the chemical mechanical polishing composition relative to the substrate, and
(iii) abrading at least a portion of the substrate to polish the substrate.

11. The method of claim 10 , wherein the colloidal silica particles are present in an amount of from about 0.1 wt. % to about 5 wt. %.

12. The method of claim 10 , wherein the colloidal silica particles have an average particle diameter of from about 20 nm to about 100 nm.

13. The method of claim 10 , wherein the anionic surfactant is a polymer or copolymer of monomers comprising functional groups selected from carboxylic acids, sulfonic acids, phosphoric acids, and combinations thereof, wherein the anionic surfactant has an average molecular weight of about 100,000 Daltons or less, and wherein the anionic surfactant is present in an amount of about 5 ppm to about 200 ppm.

14. The method of claim 13 , wherein the anionic surfactant is a poly(acrylic acid co maleic acid) copolymer.

15. The method of claim 13 , wherein the anionic surfactant is a monomeric surfactant comprising at least one sulfonic acid group.

16. The method of claim 10 , wherein the polishing composition further comprises a nonionic surfactant.

17. The method of claim 10 , wherein the buffering agent comprises an organic carboxylic acid.

18. The method of claim 10 , wherein the polishing composition is substantially free of hydrogen peroxide, ferric nitrate, potassium iodate, peracetic acid, and potassium permanganate.

19. The method of claim 10 , wherein the substrate comprises silicon nitride, and wherein at least a portion of the silicon nitride is abraded to polish the substrate.

20. The method of claim 19 , wherein the substrate further comprises silicon oxide, and wherein at least a portion of the silicon oxide is abraded to polish the substrate.

21. The method of claim 19 , wherein the substrate further comprises polysilicon, and wherein at least a portion of the polysilicon is abraded to polish the substrate.

Assignees

• Cabot Microelectronics Corp

Inventors

• Huang Hung-Tsung
• Yeh Ming-Chih
• Tsai Chih-Pin

Classifications

• H10P95/062 Primary

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• C09D1/02

  alkali metal silicates · CPC title