Energetic negative ion impact ionization plasma

Patent metadata

Field	Value
Publication number	US-9799494-B2
Application number	US-201615088930-A
Country	US
Kind code	B2
Filing date	Apr 1, 2016
Priority date	Apr 3, 2015
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected into a processing chamber. The gas includes a high electron affinity gas species. A surface is provided in the plasma chamber onto which the gas species has a tendency to chemisorb. The gas species is exposed to the surface, chemisorbed onto it, and the surface is exposed to energy that causes negative ions of the chemisorbed gas species, that interact in the plasma to release secondary electrons. A neutralizer grid may be provided to separate from the chamber a second chamber in which forms a low energy secondary plasma for processing the substrate that is dense in electrons and contains high energy neutrals of the gas species and high energy positive ions of processing gas. Pulsed energy may be used to excite plasma or bias the substrate. A hollow cathode source is also provided.

First claim

What is claimed is:

1. A method of processing a substrate with a plasma in the presence of an electro-negative gas, comprising:
injecting a processing gas that includes a gas species selected from the group consisting of Cl 2 , F 2 , Br 2 , SiCl 4 , and SiF 4 into a plasma chamber;
exposing the gas species in the plasma chamber to a surface to chemisorb the gas species onto the surface;
igniting a plasma in the plasma chamber;
exposing the surface to energy to cause the emission of negative ions from chemisorbed gas species into the plasma; and
processing the substrate using the plasma.

2. The method of claim 1 further comprising:
igniting the plasma by applying a pulsed RF signal to an electrode operably coupled to the plasma chamber to form a pulsed plasma.

3. The method of claim 1 further comprising:
applying a pulsed voltage to the substrate that alternates the bias of the substrate between a negative bias voltage level and a less negative or positive bias voltage level.

4. The method of claim 1 wherein:
the exposing of the surface includes applying a time average negative potential on the surface.

5. The method of claim 2 , wherein:
the exposing of the surface includes impacting the surface with radiation from the pulsed plasma to release negative ions of the gas species into the pulsed plasma and interacting the negative ions with a non-ionized portion of the processing gas to emit energized electrons.

6. The method of claim 5 , wherein the interacting includes neutralizing the negative ions to emit energized electrons.

7. The method of claim 6 further comprising:
energizing a second plasma with the emitted energized electrons.

8. The method of claim 7 , further comprising:
exposing the substrate to the second plasma;
applying a pulsed DC bias to the substrate positioned on a substrate support in the plasma chamber; and
periodically biasing the substrate positioned on the substrate support between first and second bias levels, the first bias level being more negative than the second bias level,
wherein the substrate and the substrate support, when biased at the first bias level, attract mono-energetic positive ions from the plasma toward the substrate and are operable to enhance a selected chemical etch process at a surface of the substrate.

9. The method of claim 2 , further comprising:
increasing an electron density of the pulsed plasma by emitting negative ions from a secondary electron source that are reactive to a non-ionized portion of the processing gas.

10. The method of claim 9 , further comprising:
neutralizing negative ions to emit energized electrons.

11. The method of claim 10 , further comprising:
energizing a secondary plasma in a portion of the plasma chamber between the plasma and the substrate with the emitted energized electrons.

12. The method of claim 11 , further comprising:
positioning the substrate on a substrate support and applying a pulsed DC bias to the substrate on the substrate support; and
periodically biasing the substrate between first and second bias levels, the first bias level being more negative than the second bias level,
wherein the substrate, when biased at the first bias level, attracts mono-energetic positive ions from the pulsed plasma toward the substrate.

13. The method of claim 1 , wherein:
the exposing of the gas species and the igniting of the plasma are carried out in a first plasma sub-chamber within the plasma chamber having a said surface therein, the ignited plasma being a primary plasma, the negative ions increasing an electron density in the primary plasma by being neutralized in the primary plasma to thereby emit energized secondary electrons; and
the processing of the substrate is carried out in a second plasma sub-chamber having the substrate therein by forming a secondary plasma in the second sub-chamber with the energized secondary electrons.

14. The method of claim 13 , wherein the substrate is positioned on a substrate holder in the second plasma sub-chamber, the method further comprising:
applying a pulsed DC bias to the substrate positioned on the substrate holder; and
periodically biasing the substrate between first and second bias levels, the first bias level being more negative than the second bias level,
wherein the substrate, when biased at the first bias level, attracts mono-energetic positive ions from the plasma toward the substrate.

15. A method of processing a substrate with a plasma in the presence of an electro-negative gas, comprising:
injecting a processing gas that includes a first gas species and a second gas species of higher electron affinity than the first gas species into a plasma chamber;
chemisorbing the second gas species onto a surface in the plasma chamber, wherein the surface is different than a surface of the substrate;
igniting a plasma in the plasma chamber;
exposing the surface to energy to cause the emission of negative ions from chemisorbed second gas species into the plasma; and
processing the substrate in the plasma chamber using the plasma containing the negative ions.

16. The method of claim 15 further comprising:
igniting the plasma by applying a pulsed RF signal to an electrode operably coupled to the plasma chamber to form a pulsed plasma.

17. The method of claim 15 further comprising:
applying a pulsed voltage to the substrate that alternates the bias of the substrate between a negative bias voltage level and a less negative or a positive bias voltage level.

18. The method of claim 15 wherein:
the exposing of the surface includes applying a time average negative potential on the surface.

19. The method of claim 16 , wherein:
the exposing of the surface includes impacting the surface with radiation from the pulsed plasma to release negative ions of the gas species into the pulsed plasma and interacting the negative ions with a non-ionized portion of the processing gas to emit energized electrons.

20. The method of claim 19 , wherein the interacting includes neutralizing the negative ions to emit energized electrons.

21. The method of claim 20 further comprising:
energizing a second plasma with the emitted energized electrons.

22. The method of claim 21 , further comprising:
exposing the substrate to the second plasma;
applying a pulsed DC bias to the substrate positioned on a substrate support in the plasma chamber; and
periodically biasing the substrate positioned on the substrate support between first and second bias levels, the first bias level being more negative than the second bias level,
wherein the substrate and the substrate support, when biased at the first bias level, attract mono-energetic positive ions from the plasma toward the substrate and are operable to enhance a selected chemical etch process at a surface of the substrate.

23. The method of claim 16 , further comprising:
increasing an electron density of the pulsed plasma by emitting negative ions from a secondary electron source that are reactive to a non-ionized portion of the processing gas.

24. The method of claim 23 , further comprising:
neutralizing the negative ions to emit energized electrons.

25. The method of claim 24 , further comprising:
energizing a secondary plasma in a portion of the plasma chamber between the plasma and the substrate with the emitted energized electrons.

26. The method of claim 25 , further comprisi

Assignees

• Tokyo Electron Ltd

Inventors

• Chen Lee
• Funk Merritt

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H01J37/32467

  Material · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title

• H01J37/32357

  Generation remote from the workpiece, e.g. down-stream · CPC title

• C23C16/517

  using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515 · CPC title