Photoelectric conversion device

Patent metadata

Field	Value
Publication number	US-9795542-B2
Application number	US-201214127442-A
Country	US
Kind code	B2
Filing date	Jul 6, 2012
Priority date	Jul 7, 2011
Publication date	Oct 24, 2017
Grant date	Oct 24, 2017

Abstract

A photoelectric conversion device includes: a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light. The wavelength converting region includes: a carrier generating region that generates the electrons and holes; a light emitting region that generates the monochromatic light; and a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that, of the electrons and holes generated in the carrier generating region, moves those electrons and holes having specific energies difference there between to the light emitting region.

First claim

The invention claimed is:

1. A photoelectric conversion device comprising:
a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and
a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light, wherein
the wavelength converting region includes:
a carrier generating region that generates the electrons and holes;
a light emitting region that generates the monochromatic light; and
a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that moves, of the electrons and holes generated in the carrier generating region, an electron and a hole having a specific energy difference therebetween to the light emitting region, and wherein
assuming that Eg1 is an energy gap for a material making up the carrier generating region, Eg2 is an energy gap for a material making up the light emitting region;
and Eg3 is an energy gap for a material making up the carrier selective transfer region in a shape in which the material is incorporated within the wavelength converting region, a following relation is satisfied:
Eg 1< Eg 2≦ Eg 3,

wherein the wavelength converting region includes wavelength converting particles each having, in sequence concentrically from a center side outward: the carrier generating region, the carrier selective transfer region, and the light emitting region.

2. The photoelectric conversion device according to claim 1 , wherein
the wavelength converting region is disposed on an upstream side of the photoelectric conversion region in a traveling direction of the ambient light.

3. The photoelectric conversion device according to claim 1 , wherein
the wavelength converting particles are dispersed and held in a transparent material included in the wavelength converting region, and
the transparent material is at least one of an electrically insulating material and a semiconductor material having a larger energy gap than a material making up the carrier generating region of the wavelength converting particles.

4. The photoelectric conversion device according to claim 1 , wherein
the wavelength converting region includes a wavelength converting film having the carrier generating region, the carrier selective transfer region and the light emitting region that are stacked so that the carrier selective transfer region is disposed between the carrier generating region and the light emitting region.

5. The photoelectric conversion device according to claim 1 , wherein
the p-n junction has sites where a p-type material and an n-type material are three-dimensionally joined.

6. The photoelectric conversion device according to claim 1 , wherein, assuming that
Ec1 and Ev1 are, respectively, a conduction-band minimum, and a valence-band maximum for the material making up the carrier generating region;
Ec2 and Ev2 are, respectively, a conduction-band minimum, and a valence-band maximum for the material making up the light emitting region; and
Ec3 and Ev3 are, respectively, an energy at a lowest discrete energy level in a conduction band, and an energy at a lowest discrete energy level in a valence band for the material making up the carrier selective transfer region in the shape in which the material is incorporated within the wavelength converting region,
following relations are satisfied:
Ec 1< Ec 2≦ Ec 3; and

Ev 3≦ Ev 2≦ Ev 2≦ Ev 1.

7. The photoelectric conversion device according to claim 1 , wherein
a surface of the light emitting region is covered with an insulator or a semiconductor material having a larger energy gap than a material making up the carrier generating region.

8. The photoelectric conversion device according to claim 1 , wherein
the light emitting region includes:
a pair of first semiconductor regions composed of a first semiconductor; and
a second semiconductor region that is disposed between the pair of first semiconductor regions, and is composed of a second semiconductor having a smaller energy gap than the first semiconductor.

9. The photoelectric conversion device according to claim 1 , wherein
the carrier selective transfer region includes:
a pair of wide-gap semiconductor regions composed of a wide-gap semiconductor; and
a narrow-gap semiconductor region that is disposed between the pair of wide-gap semiconductor regions, and is composed of a narrow-gap semiconductor having a smaller energy gap than the wide-gap semiconductor.

10. A photoelectric conversion device comprising:
a wavelength converting region that absorbs ambient light to generate electrons and holes, and recombines the generated electrons and holes to generate monochromatic light; and
a photoelectric conversion region that has a p-n junction or p-i-n junction, absorbs the monochromatic light generated in the wavelength converting region to generate electrons and holes, and separates and moves the electrons and holes generated by absorption of the monochromatic light, wherein
the wavelength converting region includes:
a carrier generating region that generates the electrons and holes;
a light emitting region that generates the monochromatic light; and
a carrier selective transfer region that is disposed between the carrier generating region and the light emitting region and that moves, of the electrons and holes generated in the carrier generating region, an electron and a hole having a specific energy difference therebetween to the light emitting region, and wherein
assuming that Eg1 is an energy gap for a material making up the carrier generating region, Eg2 is an energy gap for a material making up the light emitting region; and Eg3 is an energy gap for a material making up the carrier selective transfer region in a shape in which the material is incorporated within the wavelength converting region, a following relation is satisfied:
Eg 1< Eg 2≦ Eg 3,

wherein the wavelength converting region includes wavelength converting fibers each having, in sequence concentrically from a center side outward: the carrier generating region, the carrier selective transfer region, and the light emitting region.

11. The photoelectric conversion device according to claim 10 , wherein
the wavelength converting fibers are dispersed and held in a transparent material included in the wavelength converting region, and
the transparent material is at least one of an electrically insulating material and a semiconductor material having a larger energy gap than a material making up the carrier generating region of the wavelength converting fibers.

Assignees

• Nagashima Tomonori
• Takeda Yasuhiko
• Ekins-Daukes Nicholas John
• Farrell Daniel James
• Toyota Motor Co Ltd

Inventors

• Nagashima Tomonori
• Takeda Yasuhiko
• Ekins-Daukes Nicholas John
• Farrell Daniel James

Classifications

• A61K2800/621

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• A61Q11/00

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• A61K8/731

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• A61K8/042

  Gels · CPC title