Strontium precursor, method for preparing same, and method for forming thin film by using same

Patent metadata

Field	Value
Publication number	US-9790238-B2
Application number	US-201314398878-A
Country	US
Kind code	B2
Filing date	May 3, 2013
Priority date	May 4, 2012
Publication date	Oct 17, 2017
Grant date	Oct 17, 2017

Abstract

Disclosed herein is a novel strontium precursor containing a beta-diketonate compound. Being superior in thermal stability and volatility, the strontium precursor can form a quality strontium thin film.

First claim

What is claimed is:

1. A strontium precursor, represented by the following Chemical Formula 5:

wherein,
R1, R2, R3, R4, and R5 are independently methyl group (—CH 3 );
R6 and R7 are independently tertiary-butyl group (—C(CH 3 ) 3 ); and
m and n are independently 1.

2. A method for preparing strontium precursor represented by Chemical Formula 5 of claim 1 , using an amino alcohol represented by the following Chemical Formula 6:

wherein,
R1, R2, R3, R4, and R5 are independently methyl group (—CH 3 ); and
m and n are independently 1.

3. The method of claim 2 , wherein the method comprises:
a) reacting a compound represented by the following Chemical Formula 6 with Sr(NR 8 R 9 ) 2 to synthesize a compound represented by the following Chemical Formula 7; and
b) reacting the compound of Chemical Formula 7 with a compound represented by the following Chemical Formula 8:

wherein,
R1, R2, R3, R4, and R5 are independently methyl group (—CH 3 ); and
m and n are independently 1;

wherein,
R1, R2, R3, R4, and R5 are independently methyl group (—CH 3 );
R8 and R9 are independently H, linear or branched alkyl of C1-C10, or trialkylsilyl (—SiR 3 ); and
m and n are independently 1;

wherein,
R6 and R7 are independently tertiary-butyl group (—C(CH 3 ) 3 ).

4. A method for growth of a strontium-containing thin film, using the strontium precursor of claim 1 .

5. The method of claim 4 , wherein the growth of the strontium-containing thin film is carried out by chemical vapor deposition (CVD) or atomic layer deposition (ALD).

Assignees

• Korea Res Inst Chemical Tech

Inventors

• Park Bo-Keum
• Chung Taek-Mo
• Kim Chang-Gyoun
• George Sheby Mary
• Lee Young-Kuk
• Lim Jong-Sun
• Jeong Seog-Jong
• Jeon Dong-Ju
• An Ki-Seok
• Lee Sun-Sook

Classifications

• C23C16/18

  from metallo-organic compounds · CPC title

• C07F3/003 Primary

  without C-Metal linkages · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C23C16/409

  of the type ABO3 with A representing alkali, alkaline earth metal or lead and B representing a refractory metal, nickel, scandium or a lanthanide · CPC title

• C07F3/00

  Compounds containing elements of Groups 2 or 12 of the Periodic Table · CPC title