Micromechanical semiconductor sensing device

US9790086B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9790086-B2
Application numberUS-201615268244-A
CountryUS
Kind codeB2
Filing dateSep 16, 2016
Priority dateDec 19, 2011
Publication dateOct 17, 2017
Grant dateOct 17, 2017

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.

First claim

Opening claim text (preview).

What is claimed is: 1. A micromechanical semiconductor sensing device comprising: a micromechanical sensing structure including a sensing device responsive to an external force on the micromechanical semiconductor sensing device, the micromechanical sensing structure configured to output an electrical sensing signal responsive to the external force; and means for sensing a mechanical stress in the micromechanical sensing structure due to the external force on the micromechanical semiconductor sensing device; and means for outputting an electrical disturbance signal responsive to the sensed mechanical stress, wherein the means for sensing the mechanical stress and the means for outputting the electrical disturbance signal are embedded in the micromechanical sensing structure. 2. A method for sensing an external force on a micromechanical semiconductor sensing device, the method comprising: simultaneously obtaining an electrical sensing signal and an electrical disturbance signal, the electrical sensing signal obtained from a first sensing device of a micromechanical sensing structure of the micromechanical semiconductor sensing device, wherein the electrical disturbance signal is obtained for a second sensing device embedded in the micromechanical sensing structure, wherein the electrical sensing signal is responsive to an external force on the micromechanical semiconductor sensing device, and wherein the electrical disturbance signal is responsive to a mechanical stress in the micromechanical sensing structure due to the external force on the micromechanical semiconductor sensing device; and compensating, based on the electrical disturbance signal, a disturbance in the electrical sensing signal caused by the mechanical stress.

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Classifications

  • characterised by their shape or disposition · CPC title

  • between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

  • Accelerometers · CPC title

  • Arrangements for preventing, or for compensating for, effects of inclination or acceleration of the measuring device; Zero-setting means (for aneroid barometers G01L7/14) · CPC title

  • using variations in capacitance · CPC title

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What does patent US9790086B2 cover?
A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing …
Who is the assignee on this patent?
Infineon Technologies Ag
What technology area does this patent fall under?
Primary CPC classification B81B7/02. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Oct 17 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).