Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method

Patent metadata

Field	Value
Publication number	US-9786044-B2
Application number	US-201514971887-A
Country	US
Kind code	B2
Filing date	Dec 16, 2015
Priority date	Dec 19, 2014
Publication date	Oct 10, 2017
Grant date	Oct 10, 2017

Abstract

A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such as overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and −1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive intensity defects due to stray radiation (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly substrate (process) dependent. Calibration measurements are made on a few representative target gratings having biases. The calibration measurements are made, using not only different substrate rotations but also complementary apertures. Corrections are calculated and applied to correct asymmetry, to reduce error caused by stray radiation.

First claim

The invention claimed is:

1. A method comprising:
a first measurement comprising forming and detecting a first image of a periodic structure formed by a lithographic process on a substrate while illuminating the structure with radiation, the first image being formed using a first selected part of diffracted radiation;
a second measurement comprising forming and detecting a second image of the periodic structure while illuminating the structure with radiation, the second image being formed using a second selected part of the diffracted radiation, which second selected part is symmetrically opposite to the first part in a diffraction spectrum of the periodic structure; and
calculating a measurement of asymmetry in the periodic structure based on intensity values derived from the detected first and second images,
wherein in calculating the asymmetry measurement, a correction is included for reducing an influence of stray radiation arising in the first and second measurements.

2. The method as claimed in claim 1 , wherein the correction comprises a calculation of the form:

A
′

=

A
±
G

1
±
δ

where A′ is a corrected asymmetry value, A is an uncorrected asymmetry value and δ and G are correction values.

3. The method as claimed in claim 1 , further comprising a plurality of calibration measurements performed on the same substrate and/or a similar substrate as the first and second measurements, the correction being based on results of the calibration measurements.

4. The method as claimed in claim 3 , wherein the calibration measurements include measurements on at least first and second periodic structures, the first and second periodic structures being formed with known biases in an asymmetry-related parameter.

5. The method as claimed in claim 4 , wherein calibration measurements are made on the first and second periodic structures in parallel, images of different periodic structures being separable in an image field of a measurement optical system.

6. The method as claimed in claim 3 , wherein the calibration measurements include at least:
a first calibration measurement made with the substrate in a first orientation relative to a measurement optical system while illuminating the substrate through a first optical path;
a second calibration measurement made with the substrate in a second orientation relative to the measurement optical system while illuminating the substrate through the first optical path;
a third calibration measurement made with the substrate in the first orientation while illuminating the substrate through a second optical path; and
a fourth calibration measurement made with the substrate in the second orientation while illuminating the substrate through the second optical path.

7. The method as claimed in claim 6 , wherein the first, second, third and fourth calibration measurements are made on each of at least first and second periodic structures, the first and second periodic structures being formed with known biases in an asymmetry-related parameter.

8. The method as claimed in claim 1 , wherein the first measurement is performed with the substrate in a first orientation relative to a measurement optical system, and the second measurement is performed with the substrate in a second orientation.

9. The method as claimed in claim 1 , wherein the first and second measurements are performed with the substrate in a first orientation relative to a measurement optical system, the first measurement using a first optical path within the measurement optical system and the second measurement using a second optical path.

10. The method as claimed in claim 1 , wherein the first and second measurements are performed on a plurality of periodic structures in parallel, images of different periodic structures being separable in an image field of a measurement optical system.

11. The method as claimed in claim 10 , further comprising calculating a performance parameter of the lithographic process based on the asymmetry determined by the method for a plurality of periodic structures.

12. A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method including inspecting at least one periodic structure formed as part of or beside the device pattern on at least one of the substrates using the method as claimed in claim 1 , and controlling the lithographic process for later substrates in accordance with a result of the calculating the measurement of asymmetry.

13. A system comprising:
an inspection apparatus configured to measure asymmetry in a periodic structure on a substrate, the inspection apparatus comprising:
an illumination arrangement configured to deliver a conditioned beam of radiation to the substrate for use in measurements;
a detection arrangement configured to, during measurements, form and detect respective images of the substrate using radiation diffracted from the substrate, the illumination arrangement and the detection arrangement forming a measurement optical system;
a stop device within the detection arrangement;
a substrate support configured to support the substrate in at least first and second orientations relative to the illumination arrangement and the detection arrangement, wherein the illumination arrangement, the stop device and the substrate support together are operable to select which part of a diffraction spectrum of the diffracted radiation contributes to each image; and

a controller programmed to obtain corrected measurements of asymmetry of periodic structures by:
using the inspection apparatus, causing a first measurement comprising forming and detecting a first image of the periodic structure while illuminating the structure with radiation, the first image being formed using a first selected part of diffracted radiation,
using the inspection apparatus, causing a second measurement comprising forming and detecting a second image of the periodic structure while illuminating the structure with radiation, the second image being formed using a second selected part of the diffracted radiation, which second selected part is symmetrically opposite to the first part in a diffraction spectrum of the periodic structure, and
calculating a measurement of asymmetry in the periodic structure based on intensity values derived from the detected first and second images,
wherein in calculating the asymmetry measurement, a correction is included for reducing an influence of stray radiation arising in the first and second measurements.

14. The apparatus as claimed in claim 13 , wherein the illumination arrangement, the stop device and the substrate support together are operable to perform measurements on at least first and second periodic structures in parallel, images of different periodic structures being separable in an image field of a measurement optical system.

15. A lithographic system comprising:
a lithographic apparatus comprising:
an illumination optical system arranged to illuminate a pattern, and
a projection optical system arranged to project an image of the pattern onto a substrate; and

an inspection system as claimed in claim 13 ,
wherein the lithographic apparatus is arranged to use the measurement res

Assignees

• Asml Netherlands Bv

Inventors

• Fuchs Andreas
• Wardenier Peter Hanzen
• Singh Amandev
• D'Alfonso Maxime
• Bos Hilko Dirk

Classifications

• G06T2207/30148

  Semiconductor; IC; Wafer · CPC title

• G06T7/11

  Region-based segmentation · CPC title

• G03F7/70633 Primary

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F7/70941

  Stray fields and charges, e.g. stray light, scattered light, flare, transmission loss · CPC title

• G06T7/0004 Primary

  Industrial image inspection · CPC title