Bottom-up epitaxy growth on air-gap buffer

Patent metadata

Field	Value
Publication number	US-9780218-B1
Application number	US-201615144204-A
Country	US
Kind code	B1
Filing date	May 2, 2016
Priority date	May 2, 2016
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A fin structure for a semiconductor device, such as a FinFET structure, has first and second semiconductor layers and an air gap between the layers. The air gap may prevent current leakage. A FinFET device may be manufactured by first recessing and then epitaxially re-growing a source/drain fin, with the regrowth starting over a tubular air gap.

First claim

What is claimed is:

1. A fin structure for a semiconductor device, comprising:
a first semiconductor material;
an air gap; and
a second semiconductor material, a part of the second semiconductor material directly contacting the first semiconductor material, wherein the second semiconductor material comprises a lower recessed portion, and the air gap is located in the bottom of the lower recessed portion;
wherein the air gap is located between the first semiconductor material and the second semiconductor material, and a part of the first semiconductor material is located in the lower recessed portion; and
wherein the first semiconductor material includes an epitaxial material.

2. The fin structure of claim 1 , wherein the air gap has a tubular configuration.

3. The fin structure of claim 2 , wherein the fin structure is elongated in a first direction, the first semiconductor material extends in the first direction, and the air gap has a central axis that is parallel to the first direction.

4. The fin structure of claim 1 , wherein the lower recessed portion has an upwardly-opening acute angle that is greater than about 0° and less than about 90°.

5. The fin structure of claim 1 , wherein the second semiconductor material includes single-crystal silicon.

6. The fin structure of claim 1 , wherein the first semiconductor material includes one or more of Si, phosphorus-doped Si, SiGe, SiC, and GaAs.

7. A fin-type field effect transistor (FinFET) device, comprising:
a substrate;
a fin having source and drain regions; and
a gate straddling the fin;
wherein the fin includes a first semiconductor material and an air gap;
wherein the substrate includes a second semiconductor material, different from the first semiconductor material, and a part of the second semiconductor material directly contacts the first semiconductor material;
wherein the second semiconductor material comprises a lower recessed portion, the air gap is located in the bottom of the lower recessed portion, and a part of the first semiconductor material is located in the lower recessed portion; and
wherein the air gap is located between the first semiconductor material and the second semiconductor material.

8. The fin-type field effect transistor (FinFET) device of claim 7 , wherein the air gap has a tubular configuration.

9. The fin-type field effect transistor (FinFET) device of claim 8 , wherein the fin is elongated in a first direction, the gate is elongated in a second direction, orthogonal to the first direction, and the air gap has a central axis that is parallel to the first direction.

10. The fin-type field effect transistor (FinFET) device of claim 9 , wherein the lower recessed portion has an upwardly-opening angle in the range of from about 10° to about 55°, the angle being in a plane that is perpendicular to the first direction.

11. The fin-type field effect transistor (FinFET) device of claim 7 , wherein the second semiconductor material includes single-crystal silicon.

12. The fin-type field effect transistor (FinFET) device of claim 7 , wherein the second semiconductor material includes one or more of Si, SiGe, SiC, and GaAs.

13. The fin-type field effect transistor (FinFET) device of claim 7 , further comprising walls for defining a source/drain recess, and wherein said first semiconductor material is located between the walls.

14. The fin-type field effect transistor (FinFET) device of claim 13 , wherein the walls include one or more hard mask and dielectric materials.

15. The fin-type field effect transistor (FinFET) device of claim 13 , wherein the first semiconductor material includes an SiP buffer layer, and wherein the device further comprises an SiP bulk layer located on the SiP buffer layer.

16. The fin-type field effect transistor (FinFET) device of claim 15 , further comprising a shovel-shape element, and wherein the shovel-shape element is part of the SiP bulk layer.

Assignees

• United Microelectronics Corp
• United Microelectronics Corp

Inventors

• Liu Sheng-Hsu
• Li Jhen-Cyuan
• Chen Chih-Chung
• Lu Man-Ling
• Tsai Chung-Min
• Chen Yi-Wei

Classifications

• H10W10/021

  of air gaps · CPC title

• H10W10/20

  Air gaps · CPC title

• H01L29/165

  Electricity · mapped topic

• H01L29/7851 Primary

  Electricity · mapped topic

• H01L29/0692

  Electricity · mapped topic