Semiconductor device, method for manufacturing the same, and rinsing liquid

Patent metadata

Field	Value
Publication number	US-9780008-B2
Application number	US-201314413554-A
Country	US
Kind code	B2
Filing date	Jul 12, 2013
Priority date	Jul 17, 2012
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A method for manufacturing a semiconductor device including: a process of applying a sealing composition for a semiconductor to a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of a recess portion of an interlayer insulating layer, the sealing composition including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition being 10 ppb by mass or less on an elemental basis; and a process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer has been formed to heat treatment of from 200° C. to 425° C., to remove at least a part of the sealing layer.

First claim

The invention claimed is:

1. A method for manufacturing a semiconductor device, the method comprising:
a sealing composition application process of applying a sealing composition for a semiconductor to at least a bottom face and a side face of a recess portion of a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of the recess portion, the sealing composition for a semiconductor including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition for a semiconductor being 10 ppb by mass or less on an elemental basis, and the semiconductor substrate being provided with an interlayer insulating layer having the recess portion and a copper-containing wiring of which at least a part of a surface thereof is exposed on at least a part of the bottom face of the recess portion; and
a removal process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer for a semiconductor has been formed to heat treatment under a temperature condition of from 200° C. to 425° C., to remove at least a part of the sealing layer for a semiconductor that has been formed on an exposed face of the wiring, but leave at least a part of the sealing layer for a semiconductor that covers a side face or recess portion.

2. The method for manufacturing a semiconductor device according to claim 1 , wherein the polymer has a cationic functional group equivalent weight of from 27 to 430.

3. The method for manufacturing a semiconductor device according to claim 1 , wherein the polymer is polyethyleneimine or a polyethyleneimine derivative.

4. The method for manufacturing a semiconductor device according to claim 1 , the method comprising a washing process of washing at least the side face and the bottom face of the recess portion with a rinsing liquid having a temperature of from 15° C. to 100° C., after the sealing composition application process but before the removal process.

5. The method for manufacturing a semiconductor device according to claim 4 , wherein the temperature of the rinsing liquid is from 30° C. to 100° C.

6. The method for manufacturing a semiconductor device according to claim 1 , the method comprising a washing process of washing at least the side face and the bottom face of the recess portion with a rinsing liquid having a pH at 25° C. of 6 or lower, after the sealing composition application process but before the removal process.

7. The method for manufacturing a semiconductor device according to claim 6 , wherein the rinsing liquid includes a compound having, in one molecule thereof, at least one of a moiety A that blocks an active species or a moiety B that forms a bond with the polymer when heated.

Assignees

• Mitsui Chemicals Inc

Inventors

• Ono Shoko
• Kayaba Yasuhisa
• Tanaka Hirofumi
• Kohmura Kazuo
• Suzuki Tsuneji

Classifications

• H10P95/08

  Planarisation of organic insulating materials · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• H10P70/58

  Cleaning of porous materials · CPC title

• H10P50/287

  by chemical means · CPC title