Compensating for lithographic limitations in fabricating semiconductor interconnect structures

Patent metadata

Field	Value
Publication number	US-9779943-B2
Application number	US-201615053818-A
Country	US
Kind code	B2
Filing date	Feb 25, 2016
Priority date	Feb 25, 2016
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A hard mask is formed into lines and bridges two adjacent lines using mandrels, spacers for the mandrels and a lithographic process for each bridge to create a metal line pattern in a layer of an interconnect structure with a line pitch below lithographic resolution.

First claim

The invention claimed is:

1. A method, comprising:
forming a metal line pattern for an interconnect structure at a pitch below lithographic resolution; and
forming at least one bridge between portions of adjacent metal lines, the at least one bridge being metal and situated perpendicular to the adjacent metal lines.

2. The method of claim 1 , wherein the metal line pattern and at least one bridge are formed from a tri-layer hard mask stack.

3. The method of claim 2 , wherein the tri-layer hard mask stack comprises a layer of silicon nitride between two layers of titanium nitride.

4. The method of claim 2 , further comprising:
forming mandrels from a mandrel layer situated above the tri-layer hard mask stack; and
forming spacers adjacent the mandrels.

5. The method of claim 4 , wherein forming the mandrels comprises using lithography and etching to remove portions of a mandrel layer over the tri-layer hard mask stack.

6. The method of claim 4 , wherein forming the spacers comprises:
forming a conformal blanket dielectric layer over the mandrels; and
removing portions of the conformal blanket dielectric layer.

7. The method of claim 6 , wherein forming the conformal blanket dielectric layer comprises using an atomic layer deposition process.

8. The method of claim 4 , further comprising removing portions of a top hard mask layer of the tri-layer hard mask stack situated in at least one opening between the spacers.

9. The method of claim 8 , further comprising removing exposed portions of a middle hard mask layer of the tri-layer hard mask stack while preserving at least one portion perpendicular to a direction of the at least one opening.

10. The method of claim 9 , wherein the removing while preserving comprises using lithography.

11. The method of claim 9 , further comprising forming a filler material layer in the at least one opening and up to a top surface of the mandrels.

12. The method of claim 11 , further comprising:
removing the mandrels; and
removing portions of the top hard mask layer exposed by removing the mandrels.

13. The method of claim 12 , further comprising removing exposed portions of the middle hard mask layer of the tri-layer hard mask stack while preserving at least one portion thereof in an X-direction.

14. The method of claim 13 , wherein the removing while preserving comprises using lithography.

15. The method of claim 13 , further comprising:
removing the spacers and filler material layer;
removing remaining portions of the top hard mask layer of the tri-layer hard mask stack; and
removing exposed portions of a bottom hard mask layer of the tri-layer hard mask stack.

Assignees

• Globalfoundries Inc

Inventors

• Bouche Guillaume
• Stephens Jason Eugene

Classifications

• H10W20/089

  using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning · CPC title

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H01L23/53209

  Electricity · mapped topic

• H01L21/76879

  Electricity · mapped topic

• H01L21/0332

  Electricity · mapped topic