Chemical mechanical polishing pad and method of making same

Patent metadata

Field	Value
Publication number	US-9776300-B2
Application number	US-201615163152-A
Country	US
Kind code	B2
Filing date	May 24, 2016
Priority date	Jun 26, 2015
Publication date	Oct 3, 2017
Grant date	Oct 3, 2017

Abstract

A chemical mechanical polishing pad is provided, comprising: a chemical mechanical polishing layer having a polishing surface; wherein the chemical mechanical polishing layer is formed by combining (a) a poly side (P) liquid component, comprising: an amine-carbon dioxide adduct; and, at least one of a polyol, a polyamine and a alcohol amine; and (b) an iso side (I) liquid component, comprising: polyfunctional isocyanate; wherein the chemical mechanical polishing layer has a porosity of ≧10 vol %; wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and, wherein the polishing surface is adapted for polishing a substrate. Methods of making and using the same are also provided.

First claim

We claim:

1. A chemical mechanical polishing pad, comprising:
a chemical mechanical polishing layer having a polishing surface, a base surface and an average polishing layer thickness, T P-avg , measured normal to the polishing surface from the base surface to the polishing surface;
wherein the chemical mechanical polishing layer is formed by combining a poly side (P) liquid component and an iso side (I) liquid component;
wherein the poly side (P) liquid component comprises an amine-carbon dioxide adduct obtained by contacting carbon dioxide with an alkanolamine that contains one to two ether moieties per molecule; and, at least one of a (P) side polyol, a (P) side polyamine and a (P) side alcohol amine;
wherein the iso side (I) liquid component, comprising at least one (I) side polyfunctional isocyanate;
wherein the chemical mechanical polishing layer has a porosity of 10 vol %;
wherein the chemical mechanical polishing layer has a Shore D hardness of <40; and,
wherein the polishing surface is adapted for polishing a substrate.

2. The chemical mechanical polishing pad of claim 1 , wherein the poly side (P) liquid component comprises: 1 to 5 wt% of the amine-carbon dioxide adduct; and, 25 to 95 wt % of the (P) side polyol; wherein the (P) side polyol is a high molecular weight polyether polyol; wherein the high molecular weight polyether polyol has a number average molecular weight, M N , of 2,500 to 100,000 and an average of 4 to 8 hydroxyl groups per molecule.

3. The chemical mechanical polishing pad of claim 2 , wherein the poly side (P) liquid component further comprises: 10 to 30 wt % of a low molecular weight polyol; wherein the low molecular weight polyol has a number average molecular weight, M N , of ≦200.

4. The chemical mechanical polishing pad of claim 1 , wherein the (I) side polyfunctional isocyanate has an average of two reactive isocyanate groups per molecule.

5. The chemical mechanical polishing pad of claim 3 , wherein the poly side (P) liquid component further comprises: at least one of a catalyst and a surfactant.

6. A method of making a chemical mechanical polishing layer, comprising:
providing a poly side (P) liquid component, comprising an amine-carbon dioxide adduct obtained by contacting carbon dioxide with an alkanolamine that contains one to two ether moieties per molecule; and, at least one of a (P) side polyol, a (P) side polyamine and a (P) side alcohol amine;
providing a iso side (I) liquid component, comprising at least one at least one (I) side polyfunctional isocyanate;
providing a pressurized gas;
providing an axial mixing device having an internal cylindrical chamber;
wherein the internal cylindrical chamber has a closed end, an open end, an axis of symmetry, at least one (P) side liquid feed port that opens into the internal cylindrical chamber, at least one (I) side liquid feed port that opens into the internal cylindrical chamber, and at least one tangential pressurized gas feed port that opens into the internal cylindrical chamber;
wherein the closed end and the open end are perpendicular to the axis of symmetry;
wherein the at least one (P) side liquid feed port and the at least one (I) side liquid feed port are arranged along a circumference of the internal cylindrical chamber proximate the closed end;
wherein the at least one tangential pressurized gas feed port is arranged along the circumference of the internal cylindrical chamber downstream of the at least one (P) side liquid feed port and the at least one (I) side liquid feed port from the closed end;

wherein the poly side (P) liquid component is introduced into the internal cylindrical chamber through the at least one (P) side liquid feed port at a (P) side charge pressure of 6,895 to 27,600 kPa;
wherein the iso side (I) liquid component is introduced into the internal cylindrical chamber through the at least one (I) side liquid feed port at an (I) side charge pressure of 6,895 to 27,600 kPa;
wherein a combined mass flow rate of the poly side (P) liquid component and the iso side (I) liquid component to the internal cylindrical chamber is 1 to 500 g/s;
wherein the poly side (P) liquid component, the iso side (I) liquid component and the pressurized gas are intermixed within the internal cylindrical chamber to form a combination;
wherein the pressurized gas is introduced into the internal cylindrical chamber through the at least one tangential pressurized gas feed port with a supply pressure of 150 to 1,500 kPa;
wherein an inlet velocity into the internal cylindrical chamber of the pressurized gas is 50 to 600 m/s calculated based on ideal gas conditions at 20° C. and 1 atm pressure;
discharging the combination from the open end of the internal cylindrical chamber toward a target at a velocity of 5 to 1,000 m/sec;
allowing the combination to solidify into a cake; and, deriving the chemical mechanical polishing layer from the cake, wherein the chemical mechanical polishing layer has a porosity of ≦10 vol % and a polishing surface adapted for polishing a substrate.

7. The method of claim 6 , further comprising:
providing a poly side (P) substance, comprising at least one of the (P) side polyol, the (P) side polyamine and the (P) side alcohol amine;
providing a iso side (I) substance, comprising at least one (I) side polyfunctional isocyanate;
wherein the poly side (P) substance is introduced into the internal cylindrical chamber through the at least one (P) side liquid feed port at the (P) side charge pressure of 6,895 to 27,600 kPa;
wherein the iso side (I) substance is introduced into the internal cylindrical chamber through the at least one (I) side liquid feed port at the (I) side charge pressure of 6,895 to 27,600 kPa;
wherein a combined mass flow rate of the poly side (P) substance and the iso side (I) substance to the internal cylindrical chamber is 1 to 500 g/s;
wherein the poly side (P) substance, the iso side (I) side substance and the pressurized gas are intermixed within the internal cylindrical chamber to form a mixture;
wherein the pressurized gas is introduced into the internal cylindrical chamber through the at least one tangential pressurized gas feed port with the supply pressure of 150 to 1,500 kPa;
wherein the inlet velocity into the internal cylindrical chamber of the pressurized gas is 50 to 600 m/s calculated based on ideal gas conditions at 20 ° C. and 1 atm pressure;
discharging the mixture from the open end of the internal cylindrical chamber toward a base surface of the chemical mechanical polishing layer at a velocity of 5 to 1,000 m/sec;
allowing the mixture to solidify on the base surface of the chemical mechanical polishing layer to form a subpad; wherein the subpad is integral with the chemical mechanical polishing layer; wherein the subpad has a subpad porosity that is different from that of the chemical mechanical polishing layer.

8. A method of polishing a substrate, comprising:
providing the substrate; wherein the substrate is selected from at least one of a magnetic substrate, an optical substrate and a semiconductor substrate;
providing a chemical mechanical polishing pad comprising a chemical mechanical polishing layer according to claim 1 ;
creating dynamic contact between the polishing surface of the chemical mechanical polishing layer and the substrate to polish a surface of the substrate; and,
conditioning of the polishing surface with an abrasive conditioner.

9. The method of claim 8 , wherein the semiconductor substrate has a TEOS feature; and, wherein at least some TEOS is removed from the substrate.

10. The method of claim 9 , further comprising:
providing a polishing medium; wherein the polishing medium comprises a colloidal silic

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Dow Global Technologies Llc
• Rohm & Haas Elect Materials Cmp Holdings Inc

Inventors

• Qian Bainian
• Kozhukh Julia
• Brugarolas Brufau Teresa
• Veneziale David Michael
• Tong Yuhua
• Lugo Diego
• Miller Jeffrey B
• Jacob George C
• Degroot Marty W
• Tran Tony Quan
• Stack Marc R
• Wank Andrew
• Yeh Fengji

Classifications

• H10P95/064

  the removal being chemical etching · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• B24B37/24 Primary

  characterised by the composition or properties of the pad materials · CPC title

• C08G18/10

  Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step · CPC title