Conductive paste, electrode and solar cell
US-2018114872-A1 · Apr 26, 2018 · US
Semiconductor composition containing iron, dysprosium, and terbium
US9773876B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9773876-B2 |
| Application number | US-201615194715-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jun 28, 2016 |
| Priority date | Jul 2, 2015 |
| Publication date | Sep 26, 2017 |
| Grant date | Sep 26, 2017 |
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- Title
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Abstract
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An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
First claim
Opening claim text (preview).
What is claimed is: 1. An amorphous semiconductor composition comprising 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one element selected from the group consisting of an oxidizing element and a reducing element, said composition having an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties. 2. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 10 to 60 atomic percent iron. 3. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 10 to 50 atomic percent iron. 4. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 25 to 55 atomic percent dysprosium. 5. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 20 to 30 atomic percent terbium. 6. An amorphous semiconductor composition in accordance with claim 1 wherein said oxidizing element is oxygen. 7. An amorphous semiconductor composition in accordance with claim 1 wherein said reducing element is at least one element selected from the group consisting of sulfur, hydrogen, and nitrogen. 8. An amorphous semiconductor composition in accordance with claim 1 wherein said optical transmittance is at least 70% in the visible spectrum. 9. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition is characterized by room temperature ferromagnetism. 10. An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition is characterized by semiconductor electrical behavior. 11. A semiconductor device comprising a substrate having an amorphous semiconductor layer adherently disposed thereon, said amorphous semiconductor layer comprising 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one element selected from the group consisting of an oxidizing element and a reducing element, said composition having an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties. 12. A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 10 to 60 atomic percent iron. 13. A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 10 to 50 atomic percent iron. 14. A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 25 to 55 atomic percent dysprosium. 15. A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 20 to 30 atomic percent terbium. 16. A semiconductor device in accordance with claim 11 wherein said oxidizing element is oxygen. 17. A semiconductor device in accordance with claim 11 wherein said reducing element is at least one element selected from the group consisting of sulfur, hydrogen, and nitrogen. 18. A semiconductor device in accordance with claim 11 wherein said optical transmittance is at least 70% in the visible spectrum. 19. A semiconductor device in accordance with claim 11 wherein said semiconductor composition is characterized by room temperature ferromagnetism. 20. A semiconductor device in accordance with claim 11 wherein said semiconductor composition is characterized by semiconductor electrical behavior.
Assignees
Inventors
Classifications
- C03C3/12Primary
Silica-free oxide glass compositions · CPC title
- H01L29/247Primary
Electricity · mapped topic
with glass (C03C17/34, C03C17/44 take precedence) · CPC title
Compositions for glass with special properties · CPC title
Oxides (C23C14/10 takes precedence) · CPC title
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- What does patent US9773876B2 cover?
- An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical pr…
- Who is the assignee on this patent?
- Ut Battelle Llc, Univ Tennessee Res Found
- What technology area does this patent fall under?
- Primary CPC classification C03C3/12. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Sep 26 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).