Oxide material and semiconductor device
US-2024395942-A1 · Nov 28, 2024 · US
Semiconductor Composition Containing Iron, Dysprosium, and Terbium
US2017005170A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2017005170-A1 |
| Application number | US-201615194715-A |
| Country | US |
| Kind code | A1 |
| Filing date | Jun 28, 2016 |
| Priority date | Jul 2, 2015 |
| Publication date | Jan 5, 2017 |
| Grant date | — |
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Abstract
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An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties.
First claim
Opening claim text (preview).
What is claimed is: 1 . An amorphous semiconductor composition comprising 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one element selected from the group consisting of an oxidizing element and a reducing element, said composition having an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties. 2 . An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 10 to 60 atomic percent iron. 3 . An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 10 to 50 atomic percent iron. 4 . An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 25 to 55 atomic percent dysprosium. 5 . An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition comprises 20 to 30 atomic percent terbium. 6 . An amorphous semiconductor composition in accordance with claim 1 wherein said oxidizing element is oxygen. 7 . An amorphous semiconductor composition in accordance with claim 1 wherein said reducing element is at least one element selected from the group consisting of sulfur, hydrogen, and nitrogen. 8 . An amorphous semiconductor composition in accordance with claim 1 wherein said optical transmittance is at least 70% in the visible spectrum. 9 . An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition is characterized by room temperature ferromagnetism. 10 . An amorphous semiconductor composition in accordance with claim 1 wherein said semiconductor composition is characterized by semiconductor electrical behavior. 11 . A semiconductor device comprising a substrate having an amorphous semiconductor layer adherently disposed thereon, said amorphous semiconductor layer comprising 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one element selected from the group consisting of an oxidizing element and a reducing element, said composition having an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical properties. 12 . A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 10 to 60 atomic percent iron. 13 . A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 10 to 50 atomic percent iron. 14 . A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 25 to 55 atomic percent dysprosium. 15 . A semiconductor device in accordance with claim 11 wherein said semiconductor composition comprises 20 to 30 atomic percent terbium. 16 . A semiconductor device in accordance with claim 11 wherein said oxidizing element is oxygen. 17 . A semiconductor device in accordance with claim 11 wherein said reducing element is at least one element selected from the group consisting of sulfur, hydrogen, and nitrogen. 18 . A semiconductor device in accordance with claim 11 wherein said optical transmittance is at least 70% in the visible spectrum. 19 . A semiconductor device in accordance with claim 11 wherein said semiconductor composition is characterized by room temperature ferromagnetism. 20 . A semiconductor device in accordance with claim 11 wherein said semiconductor composition is characterized by semiconductor electrical behavior.
Assignees
Inventors
Classifications
Amorphous oxide semiconductors · CPC title
Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} · CPC title
Amorphous materials · CPC title
- H10D62/80Primary
characterised by the materials · CPC title
Intergranular or grain boundary phases · CPC title
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- What does patent US2017005170A1 cover?
- An amorphous semiconductor composition includes 1 to 70 atomic percent iron, 15 to 65 atomic percent dysprosium, 15 to 35 atomic percent terbium, balance X, wherein X is at least one of an oxidizing element and a reducing element. The composition has an essentially amorphous microstructure, an optical transmittance of at least 50% in at least the visible spectrum and semiconductor electrical pr…
- Who is the assignee on this patent?
- Ut Battelle Llc, Univ Tennessee Res Found
- What technology area does this patent fall under?
- Primary CPC classification H10D62/80. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Thu Jan 05 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (A1). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).